Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR430APBF

IRFR430APBF

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix
3,667 -

RFQ

IRFR430APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM70040M-GE3

SUM70040M-GE3

MOSFET N-CH 100V 120A TO263-7

Vishay Siliconix
3,087 -

RFQ

SUM70040M-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 7.5V, 10V 3.8mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5100 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLIZ14GPBF

IRLIZ14GPBF

MOSFET N-CH 60V 8A TO220-3

Vishay Siliconix
2,433 -

RFQ

IRLIZ14GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4V, 5V 200mOhm @ 4.8A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB6N65E-GE3

SIHB6N65E-GE3

MOSFET N-CH 650V 7A D2PAK

Vishay Siliconix
2,903 -

RFQ

SIHB6N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR610DP-T1-GE3

SIDR610DP-T1-GE3

MOSFET N-CH 200V 8.9A/39.6A PPAK

Vishay Siliconix
3,244 -

RFQ

SIDR610DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 8.9A (Ta), 39.6A (Tc) 7.5V, 10V 31.9mOhm @ 10A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 1380 pF @ 100 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9024PBF

IRFR9024PBF

MOSFET P-CH 60V 8.8A DPAK

Vishay Siliconix
1,800 -

RFQ

IRFR9024PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD9N60E-GE3

SIHD9N60E-GE3

MOSFET N-CH 600V 9A DPAK

Vishay Siliconix
2,082 -

RFQ

SIHD9N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 368mOhm @ 4.5A, 10V 4.5V @ 250µA 52 nC @ 10 V ±30V 778 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840ASTRRPBF

IRF840ASTRRPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,678 -

RFQ

IRF840ASTRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE810DF-T1-GE3

SIE810DF-T1-GE3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
3,679 -

RFQ

SIE810DF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.4mOhm @ 25A, 10V 2V @ 250µA 300 nC @ 10 V ±12V 13000 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA6N65E-E3

SIHA6N65E-E3

MOSFET N-CHANNEL 650V 7A TO220

Vishay Siliconix
2,080 -

RFQ

SIHA6N65E-E3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1640 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9510SPBF

IRF9510SPBF

MOSFET P-CH 100V 4A D2PAK

Vishay Siliconix
3,705 -

RFQ

IRF9510SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF18N50C-E3

SIHF18N50C-E3

MOSFET N-CH 500V 18A TO220-3

Vishay Siliconix
2,819 -

RFQ

SIHF18N50C-E3

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 270mOhm @ 10A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 2942 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP22N60S-E3

SIHP22N60S-E3

MOSFET N-CH 600V 22A TO220AB

Vishay Siliconix
2,618 -

RFQ

SIHP22N60S-E3

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) - 190mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V - 2810 pF @ 25 V - - - Through Hole
SIHB12N60E-GE3

SIHB12N60E-GE3

MOSFET N-CH 600V 12A D2PAK

Vishay Siliconix
3,733 -

RFQ

SIHB12N60E-GE3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG22N60S-E3

SIHG22N60S-E3

MOSFET N-CH 600V 22A TO247AC

Vishay Siliconix
2,634 -

RFQ

SIHG22N60S-E3

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) - 190mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V - 5620 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP7N60E-GE3

SIHP7N60E-GE3

MOSFET N-CH 600V 7A TO220AB

Vishay Siliconix
2,037 -

RFQ

SIHP7N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM200N04-1M7L_GE3

SQM200N04-1M7L_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix
3,104 -

RFQ

SQM200N04-1M7L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V 2.5V @ 250µA 291 nC @ 10 V ±20V 11168 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF7N60E-GE3

SIHF7N60E-GE3

MOSFET N-CHANNEL 600V 7A TO220

Vishay Siliconix
3,740 -

RFQ

SIHF7N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD113PBF

IRFD113PBF

MOSFET N-CH 60V 800MA 4DIP

Vishay Siliconix
2,078 -

RFQ

IRFD113PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 200 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30STRLPBF

IRFBE30STRLPBF

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
3,606 -

RFQ

IRFBE30STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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