Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP12N60E-GE3

SIHP12N60E-GE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
3,794 -

RFQ

SIHP12N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD9220PBF

IRFD9220PBF

MOSFET P-CH 200V 560MA 4DIP

Vishay Siliconix
2,516 -

RFQ

IRFD9220PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 560mA (Ta) 10V 1.5Ohm @ 340mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 340 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
SIHG11N80AE-GE3

SIHG11N80AE-GE3

MOSFET N-CH 800V 8A TO247AC

Vishay Siliconix
2,640 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40STRLPBF

IRFBC40STRLPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
2,355 -

RFQ

IRFBC40STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI820GPBF

IRFI820GPBF

MOSFET N-CH 500V 2.1A TO220-3

Vishay Siliconix
2,808 -

RFQ

IRFI820GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840ALPBF

IRF840ALPBF

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix
2,977 -

RFQ

IRF840ALPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI630GPBF

IRLI630GPBF

MOSFET N-CH 200V 6.2A TO220-3

Vishay Siliconix
2,460 -

RFQ

IRLI630GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 6.2A (Tc) 4V, 5V 400mOhm @ 3.7A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF12N60E-E3

SIHF12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix
3,250 -

RFQ

SIHF12N60E-E3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

MOSFET N-CH 600V 19A PPAK 8 X 8

Vishay Siliconix
3,496 -

RFQ

SIHH180N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC20SPBF

IRFBC20SPBF

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
3,448 -

RFQ

IRFBC20SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP21N60EF-BE3

SIHP21N60EF-BE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
3,790 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP50020E-GE3

SUP50020E-GE3

MOSFET N-CH 60V 120A TO220AB

Vishay Siliconix
3,046 -

RFQ

SUP50020E-GE3

Ficha técnica

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 7.5V, 10V 2.4mOhm @ 30A, 10V 4V @ 250µA 128 nC @ 10 V ±20V - - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP14N50D-E3

SIHP14N50D-E3

MOSFET N-CH 500V 14A TO220AB

Vishay Siliconix
2,320 -

RFQ

SIHP14N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 1144 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJ456EP-T1_GE3

SQJ456EP-T1_GE3

MOSFET N-CH 100V 32A PPAK SO-8

Vishay Siliconix
2,464 -

RFQ

SQJ456EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 6V, 10V 26mOhm @ 9.3A, 10V 3.5V @ 250µA 63 nC @ 10 V ±20V 3342 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA240N60E-GE3

SIHA240N60E-GE3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix
3,400 -

RFQ

SIHA240N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA15N60E-E3

SIHA15N60E-E3

MOSFET N-CH 600V 15A TO220

Vishay Siliconix
2,544 -

RFQ

SIHA15N60E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 76 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP70040E-GE3

SUP70040E-GE3

MOSFET N-CH 100V 120A TO220AB

Vishay Siliconix
3,478 -

RFQ

SUP70040E-GE3

Ficha técnica

Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 7.5V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5100 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH14N65EF-T1-GE3

SIHH14N65EF-T1-GE3

MOSFET N-CH 650V 15A PPAK 8 X 8

Vishay Siliconix
2,010 -

RFQ

SIHH14N65EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 271mOhm @ 7A, 10V 4V @ 250µA 98 nC @ 10 V ±30V 1749 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740ALPBF

IRF740ALPBF

MOSFET N-CH 400V 10A I2PAK

Vishay Siliconix
2,056 -

RFQ

IRF740ALPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF15N60E-E3

SIHF15N60E-E3

MOSFET N-CH 600V 15A TO220

Vishay Siliconix
3,426 -

RFQ

SIHF15N60E-E3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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