Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIE808DF-T1-E3

SIE808DF-T1-E3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
3,511 -

RFQ

SIE808DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.6mOhm @ 25A, 10V 3V @ 250µA 155 nC @ 10 V ±20V 8800 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD14N60E-BE3

SIHD14N60E-BE3

MOSFET N-CH 600V 13A TO252AA

Vishay Siliconix
3,155 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU6N80E-GE3

SIHU6N80E-GE3

MOSFET N-CH 800V 5.4A IPAK

Vishay Siliconix
2,245 -

RFQ

SIHU6N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N65E-GE3

SIHP12N65E-GE3

MOSFET N-CH 650V 12A TO220AB

Vishay Siliconix
2,558 -

RFQ

SIHP12N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP14N60E-GE3

SIHP14N60E-GE3

MOSFET N-CH 600V 13A TO220AB

Vishay Siliconix
2,529 -

RFQ

SIHP14N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA14N60E-E3

SIHA14N60E-E3

MOSFET N-CHANNEL 600V 13A TO220

Vishay Siliconix
3,425 -

RFQ

SIHA14N60E-E3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB12N50E-GE3

SIHB12N50E-GE3

MOSFET N-CH 500V 10.5A D2PAK

Vishay Siliconix
2,332 -

RFQ

SIHB12N50E-GE3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM120N03-1M5L_GE3

SQM120N03-1M5L_GE3

MOSFET N-CH 30V 120A TO263

Vishay Siliconix
3,696 -

RFQ

SQM120N03-1M5L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1.5mOhm @ 30A, 10V 2.5V @ 250µA 270 nC @ 10 V ±20V 15605 pF @ 15 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBF20PBF

IRFBF20PBF

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix
3,483 -

RFQ

IRFBF20PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI720GPBF

IRFI720GPBF

MOSFET N-CH 400V 2.6A TO220-3

Vishay Siliconix
3,129 -

RFQ

IRFI720GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Tc) 10V 1.8Ohm @ 1.6A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40APBF

IRFBC40APBF

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
2,809 -

RFQ

IRFBC40APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA6N80E-GE3

SIHA6N80E-GE3

MOSFET N-CH 800V 5.4A TO220

Vishay Siliconix
3,465 -

RFQ

SIHA6N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA12N60E-E3

SIHA12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix
3,696 -

RFQ

SIHA12N60E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD240N60E-GE3

SIHD240N60E-GE3

MOSFET N-CH 600V 12A DPAK

Vishay Siliconix
2,435 -

RFQ

SIHD240N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7868ADP-T1-E3

SI7868ADP-T1-E3

MOSFET N-CH 20V 40A PPAK SO-8

Vishay Siliconix
2,161 -

RFQ

SI7868ADP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V 1.6V @ 250µA 150 nC @ 10 V ±16V 6110 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBG30PBF-BE3

IRFBG30PBF-BE3

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix
3,019 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9Z24GPBF

IRFI9Z24GPBF

MOSFET P-CH 60V 8.5A TO220-3

Vishay Siliconix
2,493 -

RFQ

IRFI9Z24GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 8.5A (Tc) 10V 280mOhm @ 5.1A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP90220E-GE3

SUP90220E-GE3

MOSFET N-CH 200V 64A TO220AB

Vishay Siliconix
3,400 -

RFQ

SUP90220E-GE3

Ficha técnica

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 64A (Tc) 7.5V, 10V - 4V @ 250µA 48 nC @ 10 V ±20V 1950 pF @ 100 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH14N60EF-T1-GE3

SIHH14N60EF-T1-GE3

MOSFET N-CH 600V 15A PPAK 8 X 8

Vishay Siliconix
3,672 -

RFQ

SIHH14N60EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 266mOhm @ 7A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 1449 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP12N60E-E3

SIHP12N60E-E3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
2,162 -

RFQ

SIHP12N60E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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