Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7137DP-T1-GE3

SI7137DP-T1-GE3

MOSFET P-CH 20V 60A PPAK SO-8

Vishay Siliconix
2,361 -

RFQ

SI7137DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.95mOhm @ 25A, 10V 1.4V @ 250µA 585 nC @ 10 V ±12V 20000 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR668DP-T1-RE3

SIR668DP-T1-RE3

MOSFET N-CH 100V 95A PPAK SO-8

Vishay Siliconix
3,032 -

RFQ

SIR668DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 95A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 3.4V @ 250µA 83 nC @ 7.5 V ±20V 5400 pF @ 50 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7461DP-T1-E3

SI7461DP-T1-E3

MOSFET P-CH 60V 8.6A PPAK SO-8

Vishay Siliconix
2,295 -

RFQ

SI7461DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 8.6A (Ta) 4.5V, 10V 14.5mOhm @ 14.4A, 10V 3V @ 250µA 190 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7461DP-T1-GE3

SI7461DP-T1-GE3

MOSFET P-CH 60V 8.6A PPAK SO-8

Vishay Siliconix
3,075 -

RFQ

SI7461DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 8.6A (Ta) 4.5V, 10V 14.5mOhm @ 14.4A, 10V 3V @ 250µA 190 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

MOSFET N-CH 40V 32A PPAK SO-8

Vishay Siliconix
3,237 -

RFQ

SQJ412EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 32A (Tc) 4.5V, 10V 4.1mOhm @ 10.3A, 10V 2.5V @ 250µA 120 nC @ 10 V ±20V 5950 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI5457DC-T1-GE3

SI5457DC-T1-GE3

MOSFET P-CH 20V 6A 1206-8

Vishay Siliconix
2,971 -

RFQ

SI5457DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 4.5V 36mOhm @ 4.9A, 4.5V 1.4V @ 250µA 38 nC @ 10 V ±12V 1000 pF @ 10 V - 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4126DY-T1-GE3

SI4126DY-T1-GE3

MOSFET N-CH 30V 39A 8SO

Vishay Siliconix
2,094 -

RFQ

SI4126DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 39A (Tc) 4.5V, 10V 2.75mOhm @ 15A, 10V 2.5V @ 250µA 105 nC @ 10 V ±20V 4405 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7852DP-T1-E3

SI7852DP-T1-E3

MOSFET N-CH 80V 7.6A PPAK SO-8

Vishay Siliconix
2,677 -

RFQ

SI7852DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 7.6A (Ta) 6V, 10V 16.5mOhm @ 10A, 10V 2V @ 250µA (Min) 41 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR846DP-T1-GE3

SIR846DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
3,720 -

RFQ

SIR846DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 7.5V, 10V 7.8mOhm @ 20A, 10V 3.5V @ 250µA 72 nC @ 10 V ±20V 2870 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR870DP-T1-GE3

SIR870DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
2,566 -

RFQ

SIR870DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 3V @ 250µA 84 nC @ 10 V ±20V 2840 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD25N15-52-E3

SUD25N15-52-E3

MOSFET N-CH 150V 25A TO252

Vishay Siliconix
2,657 -

RFQ

SUD25N15-52-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 6V, 10V 52mOhm @ 5A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 1725 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR622DP-T1-RE3

SIDR622DP-T1-RE3

N-CHANNEL 150-V (D-S) MOSFET

Vishay Siliconix
2,273 -

RFQ

SIDR622DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 64.6A (Ta), 56.7A (Tc) 7.5V, 10V 17.7mOhm @ 20A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 1516 pF @ 75 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR681DP-T1-RE3

SIR681DP-T1-RE3

MOSFET P-CH 80V 17.6A/71.9A PPAK

Vishay Siliconix
2,806 -

RFQ

SIR681DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 80 V 17.6A (Ta), 71.9A (Tc) - 11.2mOhm @ 10A, 10V 2.6V @ 250µA 105 nC @ 10 V ±20V 4850 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR170DP-T1-RE3

SIDR170DP-T1-RE3

MOSFET N-CH 100V 23.2A/95A PPAK

Vishay Siliconix
3,957 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 23.2A (Ta), 95A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.5V @ 250µA 140 nC @ 10 V ±20V 6195 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2308CES-T1_BE3

SQ2308CES-T1_BE3

MOSFET N-CH 60V 2.3A SOT23-3

Vishay Siliconix
2,945 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2.3A (Tc) 4.5V, 10V 150mOhm @ 2.3A, 10V 2.5V @ 250µA 5.3 nC @ 10 V ±20V 205 pF @ 30 V - 2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD50P06-15-GE3

SUD50P06-15-GE3

MOSFET P-CH 60V 50A TO252

Vishay Siliconix
3,926 -

RFQ

SUD50P06-15-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15mOhm @ 17A, 10V 3V @ 250µA 165 nC @ 10 V ±20V 4950 pF @ 25 V - 2.5W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD50P08-25L-E3

SUD50P08-25L-E3

MOSFET P-CH 80V 50A TO252

Vishay Siliconix
2,259 -

RFQ

SUD50P08-25L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 4.5V, 10V 25.2mOhm @ 12.5A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 40 V - 8.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD50P06-15L-E3

SUD50P06-15L-E3

MOSFET P-CH 60V 50A TO252

Vishay Siliconix
3,516 -

RFQ

SUD50P06-15L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15mOhm @ 17A, 10V 3V @ 250µA 165 nC @ 10 V ±20V 4950 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ2337ES-T1_BE3

SQ2337ES-T1_BE3

MOSFET P-CH 80V 2.2A SOT23-3

Vishay Siliconix
1,976 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 2.2A (Tc) 6V, 10V 290mOhm @ 1.2A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 620 pF @ 40 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD40P10-40L_GE3

SQD40P10-40L_GE3

MOSFET P-CH 100V 38A TO252AA

Vishay Siliconix
2,416 -

RFQ

SQD40P10-40L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 4.5V, 10V 40mOhm @ 8.2A, 10V 2.5V @ 250µA 144 nC @ 10 V ±20V 5540 pF @ 15 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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