Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7478DP-T1-E3

SI7478DP-T1-E3

MOSFET N-CH 60V 15A PPAK SO-8

Vishay Siliconix
2,931 -

RFQ

SI7478DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta) 4.5V, 10V 7.5mOhm @ 20A, 10V 3V @ 250µA 160 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR872DP-T1-GE3

SIR872DP-T1-GE3

MOSFET N-CH 150V 53.7A PPAK SO-8

Vishay Siliconix
2,479 -

RFQ

SIR872DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 53.7A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 64 nC @ 10 V ±20V 2130 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR680DP-T1-GE3

SIDR680DP-T1-GE3

MOSFET N-CH 80V 32.8A/100A PPAK

Vishay Siliconix
2,561 -

RFQ

SIDR680DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 32.8A (Ta), 100A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 3.4V @ 250µA 105 nC @ 10 V ±20V 5150 pF @ 40 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

MOSFET N-CH 100V 23.2A/95A PPAK

Vishay Siliconix
2,297 -

RFQ

SIDR668DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 23.2A (Ta), 95A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 3.4V @ 250µA 108 nC @ 10 V ±20V 5400 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ4401EY-T1_BE3

SQ4401EY-T1_BE3

MOSFET P-CH 40V 17.3A 8SOIC

Vishay Siliconix
2,323 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 17.3A (Tc) 4.5V, 10V 14mOhm @ 10.5A, 10V 2.5V @ 250µA 115 nC @ 10 V ±20V 4250 pF @ 20 V - 7.14W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7463DP-T1-E3

SI7463DP-T1-E3

MOSFET P-CH 40V 11A PPAK SO-8

Vishay Siliconix
2,667 -

RFQ

SI7463DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 11A (Ta) 4.5V, 10V 9.2mOhm @ 18.6A, 10V 3V @ 250µA 140 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4434DY-T1-GE3

SI4434DY-T1-GE3

MOSFET N-CH 250V 2.1A 8SO

Vishay Siliconix
3,437 -

RFQ

SI4434DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.1A (Ta) 6V, 10V 155mOhm @ 3A, 10V 4V @ 250µA 50 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQM50P08-25L_GE3

SQM50P08-25L_GE3

MOSFET P-CHANNEL 80V 50A TO263

Vishay Siliconix
3,155 -

RFQ

SQM50P08-25L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 4.5V, 10V 25mOhm @ 12.5A, 10V 2.5V @ 250µA 137 nC @ 10 V ±20V 5350 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7852ADP-T1-E3

SI7852ADP-T1-E3

MOSFET N-CH 80V 30A PPAK SO-8

Vishay Siliconix
3,598 -

RFQ

SI7852ADP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 8V, 10V 17mOhm @ 10A, 10V 4.5V @ 250µA 45 nC @ 10 V ±20V 1825 pF @ 40 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD50P06-15L_GE3

SQD50P06-15L_GE3

MOSFET P-CH 60V 50A TO252

Vishay Siliconix
3,229 -

RFQ

SQD50P06-15L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15.5mOhm @ 17A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 5910 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7164DP-T1-GE3

SI7164DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
3,259 -

RFQ

SI7164DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 6.25mOhm @ 10A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 2830 pF @ 30 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ410EL-T1_GE3

SQJQ410EL-T1_GE3

MOSFET N-CH 100V 135A PPAK 8 X 8

Vishay Siliconix
2,988 -

RFQ

SQJQ410EL-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 135A (Tc) 4.5V, 10V 3.4mOhm @ 20A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 7350 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLD110PBF

IRLD110PBF

MOSFET N-CH 100V 1A 4DIP

Vishay Siliconix
3,965 -

RFQ

IRLD110PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 4V, 5V 540mOhm @ 600mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
SI4838DY-T1-E3

SI4838DY-T1-E3

MOSFET N-CH 12V 17A 8SO

Vishay Siliconix
2,414 -

RFQ

SI4838DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 17A (Ta) 2.5V, 4.5V 3mOhm @ 25A, 4.5V 600mV @ 250µA (Min) 60 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7174DP-T1-GE3

SI7174DP-T1-GE3

MOSFET N-CH 75V 60A PPAK SO-8

Vishay Siliconix
2,425 -

RFQ

SI7174DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 60A (Tc) 10V 7mOhm @ 10A, 10V 4.5V @ 250µA 72 nC @ 10 V ±20V 2770 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM90142E_GE3

SQM90142E_GE3

MOSFET N-CH 200V 95A TO263

Vishay Siliconix
2,801 -

RFQ

SQM90142E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 95A (Tc) 10V 15.3mOhm @ 20A, 10V 3.5V @ 250µA 85 nC @ 10 V ±20V 4200 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR310TRPBF

IRFR310TRPBF

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
2,729 -

RFQ

IRFR310TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR220EP-T1-RE3

SIDR220EP-T1-RE3

N-CHANNEL 25 V (D-S) 175C MOSFET

Vishay Siliconix
2,017 -

RFQ

SIDR220EP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 92.8A (Ta), 415A (Tc) 4.5V, 10V 0.58mOhm @ 20A, 10V 2.1V @ 250µA 200 nC @ 10 V +16V, -12V 10850 pF @ 10 V - 6.25W (Ta), 415W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR626LEP-T1-RE3

SIDR626LEP-T1-RE3

N-CHANNEL 60 V (D-S) 175C MOSFET

Vishay Siliconix
3,677 -

RFQ

SIDR626LEP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 48.7A (Ta), 218A (Tc) 4.5V, 10V 1.5mOhm @ 20A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 5900 pF @ 30 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF840PBF

IRF840PBF

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix
25,590 -

RFQ

IRF840PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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