Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUG90090E-GE3

SUG90090E-GE3

MOSFET N-CH 200V 100A TO247AC

Vishay Siliconix
100 -

RFQ

SUG90090E-GE3

Ficha técnica

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 7.5V, 10V 9.5mOhm @ 20A, 10V 4V @ 250µA 129 nC @ 10 V ±20V 5220 pF @ 100 V - 395W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI1062X-T1-GE3

SI1062X-T1-GE3

MOSFET N-CH 20V SC89-3

Vishay Siliconix
3,187 -

RFQ

SI1062X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 530mA (Ta) 1.5V, 4.5V 420mOhm @ 500mA, 4.5V 1V @ 250µA 2.7 nC @ 8 V ±8V 43 pF @ 10 V - 220mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2371EDS-T1-GE3

SI2371EDS-T1-GE3

MOSFET P-CH 30V 4.8A SOT-23

Vishay Siliconix
2,594 -

RFQ

SI2371EDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 4.8A (Tc) 2.5V, 10V 45mOhm @ 3.7A, 10V 1.5V @ 250µA 35 nC @ 10 V ±12V - - 1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3443DDV-T1-GE3

SI3443DDV-T1-GE3

MOSFET P-CH 20V 4A/5.3A 6TSOP

Vishay Siliconix
2,279 -

RFQ

SI3443DDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta), 5.3A (Tc) 2.5V, 4.5V 47mOhm @ 4.5A, 4.5V 1.5V @ 250µA 30 nC @ 8 V ±12V 970 pF @ 10 V - 1.7W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1442DH-T1-GE3

SI1442DH-T1-GE3

MOSFET N-CH 12V 4A SC70-6

Vishay Siliconix
3,767 -

RFQ

SI1442DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 4A (Ta) 1.8V, 4.5V 20mOhm @ 6A, 4.5V 1V @ 250µA 33 nC @ 8 V ±8V 1010 pF @ 6 V - 1.56W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1012CR-T1-GE3

SI1012CR-T1-GE3

MOSFET N-CH 20V SC75A

Vishay Siliconix
2,667 -

RFQ

SI1012CR-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 630mA (Ta) 1.5V, 4.5V 396mOhm @ 600mA, 4.5V 1V @ 250µA 2 nC @ 8 V ±8V 43 pF @ 10 V - 240mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2374DS-T1-GE3

SI2374DS-T1-GE3

MOSFET N-CH 20V 4.5A/5.9A SOT23

Vishay Siliconix
2,711 -

RFQ

SI2374DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta), 5.9A (Tc) 1.8V, 4.5V 30mOhm @ 4A, 4.5V 1V @ 250µA 20 nC @ 10 V ±8V 735 pF @ 10 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3493DDV-T1-GE3

SI3493DDV-T1-GE3

MOSFET P-CHANNEL 20V 8A 6TSOP

Vishay Siliconix
3,466 -

RFQ

SI3493DDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 24mOhm @ 7.5A, 4.5V 1V @ 250µA 30 nC @ 4.5 V ±8V 1825 pF @ 10 V - 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2308CDS-T1-GE3

SI2308CDS-T1-GE3

MOSFET N-CH 60V 2.6A SOT23-3

Vishay Siliconix
2,407 -

RFQ

SI2308CDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 2.6A (Tc) 4.5V, 10V 144mOhm @ 1.9A, 10V 3V @ 250µA 4 nC @ 10 V ±20V 105 pF @ 30 V - 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2356DS-T1-GE3

SI2356DS-T1-GE3

MOSFET N-CH 40V 4.3A TO236

Vishay Siliconix
3,572 -

RFQ

SI2356DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 4.3A (Tc) 2.5V, 10V 51mOhm @ 3.2A, 10V 1.5V @ 250µA 13 nC @ 10 V ±12V 370 pF @ 20 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2302CDS-T1-E3

SI2302CDS-T1-E3

MOSFET N-CH 20V 2.6A SOT23-3

Vishay Siliconix
3,248 -

RFQ

SI2302CDS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 2.5V, 4.5V 57mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5 nC @ 4.5 V ±8V - - 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1427EDH-T1-GE3

SI1427EDH-T1-GE3

MOSFET P-CH 20V 2A SC70-6

Vishay Siliconix
3,656 -

RFQ

SI1427EDH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Tc) 1.5V, 4.5V 64mOhm @ 3A, 4.5V 1V @ 250µA 21 nC @ 8 V ±8V - - 1.56W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2304DDS-T1-BE3

SI2304DDS-T1-BE3

MOSFET N-CH 30V 3.3A/3.6A SOT23

Vishay Siliconix
3,129 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.3A (Ta), 3.6A (Tc) 4.5V, 10V 60mOhm @ 3.2A, 10V 2.2V @ 250µA 6.7 nC @ 10 V ±20V 235 pF @ 15 V - 1.1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2305CDS-T1-GE3

SI2305CDS-T1-GE3

MOSFET P-CH 8V 5.8A SOT23-3

Vishay Siliconix
3,046 -

RFQ

SI2305CDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 5.8A (Tc) 1.8V, 4.5V 35mOhm @ 4.4A, 4.5V 1V @ 250µA 30 nC @ 8 V ±8V 960 pF @ 4 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1308EDL-T1-BE3

SI1308EDL-T1-BE3

MOSFET N-CH 30V 1.5A/1.4A SC70-3

Vishay Siliconix
3,087 -

RFQ

SI1308EDL-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta), 1.4A (Tc) - 132mOhm @ 1.4A, 10V 1.5V @ 250µA 4.1 nC @ 10 V ±12V 105 pF @ 15 V - 400mW (Ta), 500mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1416EDH-T1-GE3

SI1416EDH-T1-GE3

MOSFET N-CH 30V 3.9A SOT-363

Vishay Siliconix
3,526 -

RFQ

SI1416EDH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Tc) 2.5V, 10V 58mOhm @ 3.1A, 10V 1.4V @ 250µA 12 nC @ 10 V ±12V - - 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA469DJ-T1-GE3

SIA469DJ-T1-GE3

MOSFET P-CH 30V 12A PPAK SC70-6

Vishay Siliconix
2,661 -

RFQ

SIA469DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 26.5mOhm @ 5A, 10V 3V @ 250µA 15 nC @ 4.5 V ±20V 1020 pF @ 15 V - 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4435FDY-T1-GE3

SI4435FDY-T1-GE3

MOSFET P-CH 30V 12.6A 8SOIC

Vishay Siliconix
3,155 -

RFQ

SI4435FDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Tc) 4.5V, 10V 19mOhm @ 9A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1500 pF @ 15 V - 4.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2393DS-T1-GE3

SI2393DS-T1-GE3

MOSFET P-CH 30V 6.1A/7.5A SOT23

Vishay Siliconix
3,787 -

RFQ

SI2393DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 6.1A (Ta), 7.5A (Tc) 4.5V, 10V 22.7mOhm @ 5A, 10V 2.2V @ 250µA 25.2 nC @ 10 V +16V, -20V 980 pF @ 15 V - 1.3W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3460DDV-T1-GE3

SI3460DDV-T1-GE3

MOSFET N-CH 20V 7.9A 6TSOP

Vishay Siliconix
3,533 -

RFQ

SI3460DDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 7.9A (Tc) 1.8V, 4.5V 28mOhm @ 5.1A, 4.5V 1V @ 250µA 18 nC @ 8 V ±8V 666 pF @ 10 V - 1.7W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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