Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIA483DJ-T1-GE3

SIA483DJ-T1-GE3

MOSFET P-CH 30V 12A PPAK SC70-6

Vishay Siliconix
3,588 -

RFQ

SIA483DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 21mOhm @ 5A, 10V 2.2V @ 250µA 45 nC @ 10 V ±20V 1550 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

MOSFET P-CH 30V 4.5A PPAK SC70-6

Vishay Siliconix
2,419 -

RFQ

SIA817EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) LITTLE FOOT® Active P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Tc) 2.5V, 10V 65mOhm @ 3A, 10V 1.3V @ 250µA 23 nC @ 10 V ±12V 600 pF @ 15 V Schottky Diode (Isolated) 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3407DV-T1-GE3

SI3407DV-T1-GE3

MOSFET P-CH 20V 8A 6TSOP

Vishay Siliconix
2,790 -

RFQ

SI3407DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 2.5V, 4.5V 24mOhm @ 7.5A, 4.5V 1.5V @ 250µA 63 nC @ 10 V ±12V 1670 pF @ 10 V - 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2399DS-T1-GE3

SI2399DS-T1-GE3

MOSFET P-CH 20V 6A SOT23-3

Vishay Siliconix
3,328 -

RFQ

SI2399DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 10V 34mOhm @ 5.1A, 10V 1.5V @ 250µA 20 nC @ 4.5 V ±12V 835 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3421DV-T1-GE3

SI3421DV-T1-GE3

MOSFET P-CH 30V 8A 6TSOP

Vishay Siliconix
2,917 -

RFQ

SI3421DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 19.2mOhm @ 7A, 10V 3V @ 250µA 69 nC @ 10 V ±20V 2580 pF @ 15 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2318DS-T1-GE3

SI2318DS-T1-GE3

MOSFET N-CH 40V 3A SOT23-3

Vishay Siliconix
2,440 -

RFQ

SI2318DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 3A (Ta) 4.5V, 10V 45mOhm @ 3.9A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 540 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2338DS-T1-GE3

SI2338DS-T1-GE3

MOSFET N-CH 30V 6A SOT23

Vishay Siliconix
3,036 -

RFQ

SI2338DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Tc) 4.5V, 10V 28mOhm @ 5.5A, 10V 2.5V @ 250µA 13 nC @ 10 V ±20V 424 pF @ 15 V - 1.3W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1330EDL-T1-BE3

SI1330EDL-T1-BE3

MOSFET N-CH 60V 240MA SC70-3

Vishay Siliconix
2,684 -

RFQ

SI1330EDL-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) - 2.5Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2318DS-T1-BE3

SI2318DS-T1-BE3

N-CHANNEL 40-V (D-S) MOSFET

Vishay Siliconix
2,016 -

RFQ

SI2318DS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 3A (Ta) 4.5V, 10V 45mOhm @ 3.9A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 540 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ1421EDH-T1_GE3

SQ1421EDH-T1_GE3

MOSFET P-CH 60V 1.6A SC70-6

Vishay Siliconix
2,305 -

RFQ

SQ1421EDH-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Tc) 4.5V, 10V 290mOhm @ 2A, 10V 2.5V @ 250µA 5.4 nC @ 4.5 V ±20V 355 pF @ 25 V - 3.3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ2303ES-T1_GE3

SQ2303ES-T1_GE3

MOSFET P-CH 30V 2.5A TO236

Vishay Siliconix
2,568 -

RFQ

SQ2303ES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Tc) 4.5V, 10V 170mOhm @ 1.8A, 10V 2.5V @ 250µA 6.8 nC @ 10 V ±20V 210 pF @ 25 V - 1.9W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ2301ES-T1_BE3

SQ2301ES-T1_BE3

MOSFET P-CH 20V 3.9A SOT23-3

Vishay Siliconix
3,893 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Tc) 2.5V, 4.5V 120mOhm @ 2.8A, 4.5V 1.5V @ 250µA 8 nC @ 4.5 V ±8V 425 pF @ 10 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ2318BES-T1_GE3

SQ2318BES-T1_GE3

MOSFET N-CH 40V 8A SOT23-3

Vishay Siliconix
2,661 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 8A (Tc) 4.5V, 10V 26.3mOhm @ 4A, 10V 2.5V @ 250µA 9.4 nC @ 10 V ±20V 500 pF @ 25 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI2309CDS-T1-E3

SI2309CDS-T1-E3

MOSFET P-CH 60V 1.6A SOT23-3

Vishay Siliconix
2,453 -

RFQ

SI2309CDS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Tc) 4.5V, 10V 345mOhm @ 1.25A, 10V 3V @ 250µA 4.1 nC @ 4.5 V ±20V 210 pF @ 30 V - 1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA427ADJ-T1-GE3

SIA427ADJ-T1-GE3

MOSFET P-CH 8V 12A PPAK SC70-6

Vishay Siliconix
3,781 -

RFQ

SIA427ADJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 12A (Tc) 1.2V, 4.5V 16mOhm @ 8.2A, 4.5V 800mV @ 250µA 50 nC @ 5 V ±5V 2300 pF @ 4 V - 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3483DDV-T1-GE3

SI3483DDV-T1-GE3

MOSFET P-CH 30V 6.4A/8A 6TSOP

Vishay Siliconix
3,548 -

RFQ

SI3483DDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 6.4A (Ta), 8A (Tc) 4.5V, 10V 31.2mOhm @ 5A, 10V 2.2V @ 250µA 14.5 nC @ 10 V +16V, -20V 580 pF @ 15 V - 2W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8472DB-T2-E1

SI8472DB-T2-E1

MOSFET N-CH 20V 4MICRO FOOT

Vishay Siliconix
3,258 -

RFQ

SI8472DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 3.3A (Ta) 1.5V, 4.5V 44mOhm @ 1.5A, 4.5V 900mV @ 250µA 18 nC @ 8 V ±8V 630 pF @ 10 V - 780mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA485DJ-T1-GE3

SIA485DJ-T1-GE3

MOSFET P-CH 150V 1.6A PPAK SC70

Vishay Siliconix
3,949 -

RFQ

SIA485DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 150 V 1.6A (Tc) 6V, 10V 2.6Ohm @ 500mA, 10V 4.5V @ 250µA 6.3 nC @ 10 V ±20V 155 pF @ 75 V - 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

MOSFET P-CH 20V 5.3A SOT-23

Vishay Siliconix
3,317 -

RFQ

SI2323DDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Tc) 1.8V, 4.5V 39mOhm @ 4.1A, 4.5V 1V @ 250µA 36 nC @ 8 V ±8V 1160 pF @ 10 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2306BDS-T1-GE3

SI2306BDS-T1-GE3

MOSFET N-CH 30V 3.16A SOT23-3

Vishay Siliconix
3,766 -

RFQ

SI2306BDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.16A (Ta) 4.5V, 10V 47mOhm @ 3.5A, 10V 3V @ 250µA 4.5 nC @ 5 V ±20V 305 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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