Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI3473CDV-T1-GE3

SI3473CDV-T1-GE3

MOSFET P-CH 12V 8A 6TSOP

Vishay Siliconix
2,203 -

RFQ

SI3473CDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 22mOhm @ 8.1A, 4.5V 1V @ 250µA 65 nC @ 8 V ±8V 2010 pF @ 6 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS472DN-T1-GE3

SIS472DN-T1-GE3

MOSFET N-CH 30V 20A PPAK1212-8

Vishay Siliconix
3,578 -

RFQ

SIS472DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 8.9mOhm @ 15A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 997 pF @ 15 V - 3.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4425FDY-T1-GE3

SI4425FDY-T1-GE3

MOSFET P-CH 30V 12.7/18.3A 8SOIC

Vishay Siliconix
3,668 -

RFQ

SI4425FDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 12.7A (Ta), 18.3A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.2V @ 250µA 41 nC @ 10 V +16V, -20V 1620 pF @ 15 V - 2.3W (Ta), 4.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2323DS-T1-GE3

SI2323DS-T1-GE3

MOSFET P-CH 20V 3.7A SOT23-3

Vishay Siliconix
3,447 -

RFQ

SI2323DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Not For New Designs P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 1.8V, 4.5V 39mOhm @ 4.7A, 4.5V 1V @ 250µA 19 nC @ 4.5 V ±8V 1020 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2319DS-T1-GE3

SI2319DS-T1-GE3

MOSFET P-CH 40V 2.3A SOT23-3

Vishay Siliconix
2,663 -

RFQ

SI2319DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 2.3A (Ta) 10V 82mOhm @ 3A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 470 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4431CDY-T1-GE3

SI4431CDY-T1-GE3

MOSFET P-CH 30V 9A 8SO

Vishay Siliconix
2,547 -

RFQ

SI4431CDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 32mOhm @ 7A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1006 pF @ 15 V - 2.5W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ3427AEEV-T1_GE3

SQ3427AEEV-T1_GE3

MOSFET P-CH 60V 5.3A 6TSOP

Vishay Siliconix
2,974 -

RFQ

SQ3427AEEV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 95mOhm @ 4.5A, 10V 2.5V @ 250µA 22 nC @ 10 V ±20V 1000 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIB452DK-T1-GE3

SIB452DK-T1-GE3

MOSFET N-CH 190V 1.5A PPAK SC75

Vishay Siliconix
2,938 -

RFQ

SIB452DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 190 V 1.5A (Tc) 1.8V, 4.5V 2.4Ohm @ 500mA, 4.5V 1.5V @ 250µA 6.5 nC @ 10 V ±16V 135 pF @ 50 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

MOSFET P-CH 20V 13.4A 8SO

Vishay Siliconix
7,030 -

RFQ

SI4403CDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 13.4A (Tc) 1.8V, 4.5V 15.5mOhm @ 9A, 4.5V 1V @ 250µA 90 nC @ 8 V ±8V 2380 pF @ 10 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ3461EV-T1_GE3

SQ3461EV-T1_GE3

MOSFET P-CHANNEL 12V 8A 6TSOP

Vishay Siliconix
2,798 -

RFQ

SQ3461EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 25mOhm @ 7.9A, 4.5V 1V @ 250µA 28 nC @ 4.5 V ±8V 2000 pF @ 6 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI1302DL-T1-E3

SI1302DL-T1-E3

MOSFET N-CH 30V 600MA SC70-3

Vishay Siliconix
3,980 -

RFQ

SI1302DL-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 600mA (Ta) 4.5V, 10V 480mOhm @ 600mA, 10V 3V @ 250µA 1.4 nC @ 10 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4447DY-T1-E3

SI4447DY-T1-E3

MOSFET P-CH 40V 3.3A 8SO

Vishay Siliconix
3,393 -

RFQ

SI4447DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 3.3A (Ta) 15V, 10V 72mOhm @ 4.5A, 15V 2.2V @ 250µA 14 nC @ 4.5 V ±16V 805 pF @ 20 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3410DV-T1-GE3

SI3410DV-T1-GE3

MOSFET N-CH 30V 8A 6TSOP

Vishay Siliconix
2,600 -

RFQ

SI3410DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 19.5mOhm @ 5A, 10V 3V @ 250µA 33 nC @ 10 V ±20V 1295 pF @ 15 V - 2W (Ta), 4.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR836DP-T1-GE3

SIR836DP-T1-GE3

MOSFET N-CH 40V 21A PPAK SO-8

Vishay Siliconix
2,819 -

RFQ

SIR836DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 600 pF @ 20 V - 3.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL110TRPBF

IRFL110TRPBF

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
2,328 -

RFQ

IRFL110TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS438DN-T1-GE3

SIS438DN-T1-GE3

MOSFET N-CH 20V 16A PPAK 1212-8

Vishay Siliconix
16,583 -

RFQ

SIS438DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.3V @ 250µA 23 nC @ 10 V ±20V 880 pF @ 10 V - 3.5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8800EDB-T2-E1

SI8800EDB-T2-E1

MOSFET N-CH 20V 4MICROFOOT

Vishay Siliconix
2,660 -

RFQ

SI8800EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 80mOhm @ 1A, 4.5V 1V @ 250µA 8.3 nC @ 8 V ±8V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2328DS-T1-E3

SI2328DS-T1-E3

MOSFET N-CH 100V 1.15A SOT23-3

Vishay Siliconix
2,994 -

RFQ

SI2328DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 1.15A (Ta) 10V 250mOhm @ 1.5A, 10V 4V @ 250µA 5 nC @ 10 V ±20V - - 730mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4401DDY-T1-GE3

SI4401DDY-T1-GE3

MOSFET P-CH 40V 16.1A 8SO

Vishay Siliconix
2,006 -

RFQ

SI4401DDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 16.1A (Tc) 4.5V, 10V 15mOhm @ 10.2A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 3007 pF @ 20 V - 2.5W (Ta), 6.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2342DS-T1-GE3

SI2342DS-T1-GE3

MOSFET N-CH 8V 6A SOT-23

Vishay Siliconix
2,581 -

RFQ

SI2342DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8 V 6A (Tc) 1.2V, 4.5V 17mOhm @ 7.2A, 4.5V 800mV @ 250µA 15.8 nC @ 4.5 V ±5V 1070 pF @ 4 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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