Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQ4050EY-T1_GE3

SQ4050EY-T1_GE3

MOSFET N-CHANNEL 40V 19A 8SOIC

Vishay Siliconix
2,458 -

RFQ

SQ4050EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Tc) 4.5V, 10V 8mOhm @ 10A, 10V 2.5V @ 250µA 51 nC @ 10 V ±20V 2406 pF @ 20 V - 6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4064EY-T1_GE3

SQ4064EY-T1_GE3

MOSFET N-CHANNEL 60V 12A 8SOIC

Vishay Siliconix
2,626 -

RFQ

SQ4064EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 19.8mOhm @ 6.1A, 10V 2.5V @ 250µA 43 nC @ 10 V ±20V 2096 pF @ 25 V - 6.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4064EY-T1_BE3

SQ4064EY-T1_BE3

MOSFET N-CHANNEL 60V 12A 8SOIC

Vishay Siliconix
3,755 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 19.8mOhm @ 6.1A, 10V 2.5V @ 250µA 43 nC @ 10 V ±20V 2096 pF @ 25 V - 6.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA86EP-T1_GE3

SQJA86EP-T1_GE3

MOSFET N-CH 80V 30A PPAK SO-8

Vishay Siliconix
3,554 -

RFQ

SQJA86EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 19mOhm @ 8A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1400 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS415ENW-T1_GE3

SQS415ENW-T1_GE3

MOSFET P-CH 40V 16A PPAK1212-8W

Vishay Siliconix
2,462 -

RFQ

SQS415ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 16A (Tc) 4.5V, 10V 16.1mOhm @ 12A, 10V 2.5V @ 250µA 82 nC @ 10 V ±20V 4825 pF @ 25 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR410DP-T1-GE3

SIR410DP-T1-GE3

MOSFET N-CH 20V 35A PPAK SO-8

Vishay Siliconix
2,034 -

RFQ

SIR410DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1600 pF @ 10 V - 4.2W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR124DP-T1-RE3

SIR124DP-T1-RE3

MOSFET N-CH 80V 16.1A/56.8A PPAK

Vishay Siliconix
498 -

RFQ

SIR124DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 16.1A (Ta), 56.8A (Tc) 7.5V, 10V 8.4mOhm @ 10A, 10V 3.8V @ 250µA 40 nC @ 10 V ±20V 1666 pF @ 40 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS98DN-T1-GE3

SISS98DN-T1-GE3

MOSFET N-CH 200V 14.1A PPAK

Vishay Siliconix
2,785 -

RFQ

SISS98DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 14.1A (Tc) 7.5V, 10V 105mOhm @ 7A, 10V 4V @ 250µA 14 nC @ 7.5 V ±20V 608 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJ186DP-T1-GE3

SIJ186DP-T1-GE3

MOSFET N-CH 60V 23A/79.4A PPAK

Vishay Siliconix
2,470 -

RFQ

SIJ186DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Ta), 79.4A (Tc) 6V, 10V 4.5mOhm @ 15A, 10V 3.6V @ 250µA 37 nC @ 10 V ±20V 1710 pF @ 30 V - 5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2389ES-T1_BE3

SQ2389ES-T1_BE3

MOSFET P-CH 40V 4.1A SOT23-3

Vishay Siliconix
3,906 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 4.1A (Tc) 4.5V, 10V 94mOhm @ 10A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 420 pF @ 20 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS862DN-T1-GE3

SIS862DN-T1-GE3

MOSFET N-CH 60V 40A PPAK1212-8

Vishay Siliconix
3,174 -

RFQ

SIS862DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 4.5V, 10V 8.5mOhm @ 20A, 10V 2.6V @ 250µA 32 nC @ 10 V ±20V 1320 pF @ 30 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7317DN-T1-GE3

SI7317DN-T1-GE3

MOSFET P-CH 150V 2.8A PPAK1212-8

Vishay Siliconix
3,347 -

RFQ

SI7317DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 2.8A (Tc) 6V, 10V 1.2Ohm @ 500mA, 10V 4.5V @ 250µA 9.8 nC @ 10 V ±30V 365 pF @ 75 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS12DN-T1-GE3

SISS12DN-T1-GE3

MOSFET N-CH 40V 37.5A/60A PPAK

Vishay Siliconix
3,211 -

RFQ

SISS12DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 37.5A (Ta), 60A (Tc) 4.5V, 10V 1.98mOhm @ 10A, 10V 2.4V @ 250µA 89 nC @ 10 V +20V, -16V 4270 pF @ 20 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7308DN-T1-GE3

SI7308DN-T1-GE3

MOSFET N-CH 60V 6A PPAK1212-8

Vishay Siliconix
2,448 -

RFQ

SI7308DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Tc) 4.5V, 10V 58mOhm @ 5.4A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 665 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR422DP-T1-GE3

SIR422DP-T1-GE3

MOSFET N-CH 40V 40A PPAK SO-8

Vishay Siliconix
2,191 -

RFQ

SIR422DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 1785 pF @ 20 V - 5W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ9407EY-T1_GE3

SQ9407EY-T1_GE3

MOSFET P-CHANNEL 60V 4.6A 8SO

Vishay Siliconix
2,271 -

RFQ

SQ9407EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 4.6A (Tc) 4.5V, 10V 85mOhm @ 3.5A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 1140 pF @ 30 V - 3.75W (Tc) -55°C ~ 175°C (TA) Surface Mount
SQJA82EP-T1_GE3

SQJA82EP-T1_GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
3,708 -

RFQ

SQJA82EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 8.2mOhm @ 10A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 3000 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISS22LDN-T1-GE3

SISS22LDN-T1-GE3

MOSFET N-CH 60V 25.5A/92.5A PPAK

Vishay Siliconix
3,689 -

RFQ

SISS22LDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 25.5A (Ta), 92.5A (Tc) 4.5V, 10V 3.65mOhm @ 15A, 10V 2.5V @ 250µA 56 nC @ 10 V ±20V 2540 pF @ 30 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9110TRPBF

IRFR9110TRPBF

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix
2,012 -

RFQ

IRFR9110TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4835DDY-T1-GE3

SI4835DDY-T1-GE3

MOSFET P-CH 30V 13A 8SO

Vishay Siliconix
2,361 -

RFQ

SI4835DDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 18mOhm @ 10A, 10V 3V @ 250µA 65 nC @ 10 V ±25V 1960 pF @ 15 V - 2.5W (Ta), 5.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 4041424344454647...238Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário