Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQJ858AEP-T1_GE3

SQJ858AEP-T1_GE3

MOSFET N-CH 40V 58A PPAK SO-8

Vishay Siliconix
3,186 -

RFQ

SQJ858AEP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Tc) 4.5V, 10V 6.3mOhm @ 14A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 2450 pF @ 20 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3430DV-T1-E3

SI3430DV-T1-E3

MOSFET N-CH 100V 1.8A 6TSOP

Vishay Siliconix
2,036 -

RFQ

SI3430DV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 1.8A (Ta) 6V, 10V 170mOhm @ 2.4A, 10V 2V @ 250µA (Min) 6.6 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4116DY-T1-GE3

SI4116DY-T1-GE3

MOSFET N-CH 25V 18A 8SO

Vishay Siliconix
2,112 -

RFQ

SI4116DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 18A (Tc) 2.5V, 10V 8.6mOhm @ 10A, 10V 1.4V @ 250µA 56 nC @ 10 V ±12V 1925 pF @ 15 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISA04DN-T1-GE3

SISA04DN-T1-GE3

MOSFET N-CH 30V 40A PPAK1212-8

Vishay Siliconix
2,451 -

RFQ

SISA04DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 2.15mOhm @ 15A, 10V 2.2V @ 250µA 77 nC @ 10 V +20V, -16V 3595 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7850ADP-T1-GE3

SI7850ADP-T1-GE3

MOSFET N-CH 60V 10.3A/12A PPAK

Vishay Siliconix
2,294 -

RFQ

SI7850ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 10.3A (Ta), 12A (Tc) 4.5V, 10V 19.5mOhm @ 10A, 10V 2.8V @ 250µA 17 nC @ 10 V ±20V 790 pF @ 30 V - 3.6W (Ta), 35.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7463ADP-T1-GE3

SI7463ADP-T1-GE3

MOSFET P-CH 40V 46A PPAK SO-8

Vishay Siliconix
3,588 -

RFQ

SI7463ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 46A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 2.3V @ 250µA 144 nC @ 10 V ±20V 4150 pF @ 20 V - 5W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISH101DN-T1-GE3

SISH101DN-T1-GE3

MOSFET P-CH 30V 16.9A/35A PPAK

Vishay Siliconix
3,526 -

RFQ

SISH101DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 16.9A (Ta), 35A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 10V 2.5V @ 250µA 102 nC @ 10 V ±25V 3595 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR320TRPBF

IRFR320TRPBF

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix
3,058 -

RFQ

IRFR320TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFRC20TRPBF

IRFRC20TRPBF

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix
2,711 -

RFQ

IRFRC20TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQS460EN-T1_GE3

SQS460EN-T1_GE3

MOSFET N-CH 60V 8A PPAK1212-8

Vishay Siliconix
2,379 -

RFQ

SQS460EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 5.3A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 755 pF @ 25 V - 39W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4425BDY-T1-E3

SI4425BDY-T1-E3

MOSFET P-CH 30V 8.8A 8SO

Vishay Siliconix
3,677 -

RFQ

SI4425BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta) 4.5V, 10V 12mOhm @ 11.4A, 10V 3V @ 250µA 100 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SISS32DN-T1-GE3

SISS32DN-T1-GE3

MOSFET N-CH 80V 17.4A/63A PPAK

Vishay Siliconix
3,359 -

RFQ

SISS32DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 17.4A (Ta), 63A (Tc) 7.5V, 10V 7.2mOhm @ 10A, 10V 3.8V @ 250µA 42 nC @ 10 V ±20V 1930 pF @ 40 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS30LDN-T1-GE3

SISS30LDN-T1-GE3

MOSFET N-CH 80V 16A/55.5A PPAK

Vishay Siliconix
3,981 -

RFQ

SISS30LDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 55.5A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2070 pF @ 40 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ454EP-T1_GE3

SQJ454EP-T1_GE3

MOSFET N-CH 200V 13A PPAK SO-8

Vishay Siliconix
3,187 -

RFQ

SQJ454EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 13A (Tc) 4.5V, 10V 145mOhm @ 7.5A, 10V 2.5V @ 250µA 85 nC @ 10 V ±20V 2600 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRA04DP-T1-GE3

SIRA04DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
2,267 -

RFQ

SIRA04DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 2.15mOhm @ 15A, 10V 2.2V @ 250µA 77 nC @ 10 V +20V, -16V 3595 pF @ 15 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD19P06-60L-E3

SUD19P06-60L-E3

MOSFET P-CH 60V 19A TO252

Vishay Siliconix
3,151 -

RFQ

SUD19P06-60L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 19A (Tc) 4.5V, 10V 60mOhm @ 10A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1710 pF @ 25 V - 2.7W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA62EP-T1_GE3

SQJA62EP-T1_GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
3,701 -

RFQ

SQJA62EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 4.5mOhm @ 10A, 10V 2.5V @ 250µA 85 nC @ 10 V ±20V 5100 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISS76LDN-T1-GE3

SISS76LDN-T1-GE3

MOSFET N-CH 70V 19.6A/67.4A PPAK

Vishay Siliconix
2,569 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 70 V 19.6A (Ta), 67.4A (Tc) 3.3V, 4.5V 6.25mOhm @ 10A, 4.5V 1.6V @ 250µA 33.5 nC @ 4.5 V ±12V 2780 pF @ 35 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD40131EL_GE3

SQD40131EL_GE3

MOSFET P-CH 40V 50A TO252AA

Vishay Siliconix
2,998 -

RFQ

SQD40131EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 11.5mOhm @ 30A, 10V 2.5V @ 250µA 115 nC @ 10 V ±20V 6600 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9220TRPBF

IRFR9220TRPBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix
3,769 -

RFQ

IRFR9220TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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