Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIA462DJ-T1-GE3

SIA462DJ-T1-GE3

MOSFET N-CH 30V 12A PPAK SC70-6

Vishay Siliconix
3,628 -

RFQ

SIA462DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 18mOhm @ 9A, 10V 2.4V @ 250µA 17 nC @ 10 V ±20V 570 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002-T1-GE3

2N7002-T1-GE3

MOSFET N-CH 60V 115MA TO236

Vishay Siliconix
3,931 -

RFQ

2N7002-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002E-T1-GE3

2N7002E-T1-GE3

MOSFET N-CH 60V 240MA TO236

Vishay Siliconix
3,892 -

RFQ

2N7002E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 10V 3Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 21 pF @ 5 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1032R-T1-GE3

SI1032R-T1-GE3

MOSFET N-CH 20V 140MA SC75A

Vishay Siliconix
2,161 -

RFQ

SI1032R-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 140mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2333DDS-T1-GE3

SI2333DDS-T1-GE3

MOSFET P-CH 12V 6A SOT23-3

Vishay Siliconix
3,129 -

RFQ

SI2333DDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 6A (Tc) 1.5V, 4.5V 28mOhm @ 5A, 4.5V 1V @ 250µA 35 nC @ 8 V ±8V 1275 pF @ 6 V - 1.2W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3417DV-T1-GE3

SI3417DV-T1-GE3

MOSFET P-CH 30V 8A 6TSOP

Vishay Siliconix
3,161 -

RFQ

SI3417DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 25.2mOhm @ 7.3A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 1350 pF @ 15 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2369BDS-T1-GE3

SI2369BDS-T1-GE3

MOSFET P-CH 30V 5.6A/7.5A SOT23

Vishay Siliconix
2,410 -

RFQ

SI2369BDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 5.6A (Ta), 7.5A (Tc) 4.5V, 10V 27mOhm @ 5A, 10V 2.2V @ 250µA 19.5 nC @ 10 V +16V, -20V 745 pF @ 15 V - 1.3W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3424CDV-T1-GE3

SI3424CDV-T1-GE3

MOSFET N-CH 30V 8A 6TSOP

Vishay Siliconix
11,200 -

RFQ

SI3424CDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 26mOhm @ 7.2A, 10V 2.5V @ 250µA 12.5 nC @ 10 V ±20V 405 pF @ 15 V - 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1443EDH-T1-GE3

SI1443EDH-T1-GE3

MOSFET P-CH 30V 4A SOT-363

Vishay Siliconix
2,071 -

RFQ

SI1443EDH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Tc) 10V 54mOhm @ 4.3A, 10V 1.5V @ 250µA 28 nC @ 10 V ±12V - - 1.6W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1012X-T1-GE3

SI1012X-T1-GE3

MOSFET N-CH 20V 500MA SC89-3

Vishay Siliconix
3,842 -

RFQ

SI1012X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4.5V 700mOhm @ 600mA, 4.5V 900mV @ 250µA 0.75 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2303CDS-T1-GE3

SI2303CDS-T1-GE3

MOSFET P-CH 30V 2.7A SOT23-3

Vishay Siliconix
2,630 -

RFQ

SI2303CDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Tc) 4.5V, 10V 190mOhm @ 1.9A, 10V 3V @ 250µA 8 nC @ 10 V ±20V 155 pF @ 15 V - 1W (Ta), 2.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8817DB-T2-E1

SI8817DB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
3,449 -

RFQ

SI8817DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2.1A (Ta) 1.5V, 4.5V 76mOhm @ 1A, 4.5V 1V @ 250µA 19 nC @ 8 V ±8V 615 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA440DJ-T1-GE3

SIA440DJ-T1-GE3

MOSFET N-CH 40V 12A PPAK SC70-6

Vishay Siliconix
2,043 -

RFQ

SIA440DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Tc) 2.5V, 10V 26mOhm @ 9A, 10V 1.4V @ 250µA 21.5 nC @ 10 V ±12V 700 pF @ 20 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3127DV-T1-GE3

SI3127DV-T1-GE3

MOSFET P-CH 60V 3.5A/13A 6TSOP

Vishay Siliconix
3,389 -

RFQ

SI3127DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Ta), 13A (Tc) 4.5V, 10V 89mOhm @ 1.5A, 4.5V 3V @ 250µA 30 nC @ 10 V ±20V 833 pF @ 20 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA18BDP-T1-GE3

SIRA18BDP-T1-GE3

MOSFET N-CH 30V 19A/40A PPAK SO8

Vishay Siliconix
2,356 -

RFQ

SIRA18BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 40A (Tc) 4.5V, 10V 6.83mOhm @ 10A, 10V 2.4V @ 250µA 19 nC @ 10 V +20V, -16V 680 pF @ 15 V - 3.8W (Ta), 17W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA459EDJ-T1-GE3

SIA459EDJ-T1-GE3

MOSFET P-CH 20V 9A PPAK SC70-6

Vishay Siliconix
2,693 -

RFQ

SIA459EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 2.5V, 4.5V 35mOhm @ 5A, 4.5V 1.2V @ 250µA 30 nC @ 10 V ±12V 885 pF @ 10 V - 2.9W (Ta), 15.6W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI2307CDS-T1-GE3

SI2307CDS-T1-GE3

MOSFET P-CH 30V 3.5A SOT23-3

Vishay Siliconix
3,813 -

RFQ

SI2307CDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Tc) 4.5V, 10V 88mOhm @ 3.5A, 10V 3V @ 250µA 6.2 nC @ 4.5 V ±20V 340 pF @ 15 V - 1.1W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3433CDV-T1-GE3

SI3433CDV-T1-GE3

MOSFET P-CH 20V 6A 6TSOP

Vishay Siliconix
2,359 -

RFQ

SI3433CDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 1.8V, 4.5V 38mOhm @ 5.2A, 4.5V 1V @ 250µA 45 nC @ 8 V ±8V 1300 pF @ 10 V - 1.6W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB456DK-T1-GE3

SIB456DK-T1-GE3

MOSFET N-CH 100V 6.3A PPAK SC75

Vishay Siliconix
2,317 -

RFQ

SIB456DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.3A (Tc) 4.5V, 10V 185mOhm @ 1.9A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 130 pF @ 50 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2336DS-T1-GE3

SI2336DS-T1-GE3

MOSFET N-CH 30V 5.2A SOT23-3

Vishay Siliconix
2,508 -

RFQ

SI2336DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 5.2A (Tc) 1.8V, 4.5V 42mOhm @ 3.8A, 4.5V 1V @ 250µA 15 nC @ 8 V ±8V 560 pF @ 15 V - 1.25W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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