Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR680ADP-T1-RE3

SIR680ADP-T1-RE3

MOSFET N-CH 80V 30.7A/125A PPAK

Vishay Siliconix
2,713 -

RFQ

SIR680ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 30.7A (Ta), 125A (Tc) 7.5V, 10V 2.88mOhm @ 20A, 10V 3.5V @ 250µA 83 nC @ 10 V ±20V 4415 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9120TRLPBF-BE3

IRFR9120TRLPBF-BE3

MOSFET P-CH 100V 5.6A DPAK

Vishay Siliconix
2,229 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ4182EY-T1_GE3

SQ4182EY-T1_GE3

MOSFET N-CHANNEL 30V 32A 8SOIC

Vishay Siliconix
3,534 -

RFQ

SQ4182EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 3.8mOhm @ 14A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5400 pF @ 15 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR680ADP-T1-RE3

SIDR680ADP-T1-RE3

MOSFET N-CH 80V 30.7A/137A PPAK

Vishay Siliconix
3,111 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 30.7A (Ta), 137A (Tc) 7.5V, 10V 2.88mOhm @ 20A, 10V 3.5V @ 250µA 83 nC @ 10 V ±20V 4415 pF @ 40 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9520PBF-BE3

IRF9520PBF-BE3

MOSFET P-CH 100V 6.8A TO220AB

Vishay Siliconix
2,240 -

RFQ

IRF9520PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) - 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIR826ADP-T1-GE3

SIR826ADP-T1-GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
2,108 -

RFQ

SIR826ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.8V @ 250µA 86 nC @ 10 V ±20V 2800 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7489DP-T1-GE3

SI7489DP-T1-GE3

MOSFET P-CH 100V 28A PPAK SO-8

Vishay Siliconix
3,314 -

RFQ

SI7489DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4.5V, 10V 41mOhm @ 7.8A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4600 pF @ 50 V - 5.2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7489DP-T1-E3

SI7489DP-T1-E3

MOSFET P-CH 100V 28A PPAK SO-8

Vishay Siliconix
2,095 -

RFQ

SI7489DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4.5V, 10V 41mOhm @ 7.8A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4600 pF @ 50 V - 5.2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7469DP-T1-GE3

SI7469DP-T1-GE3

MOSFET P-CH 80V 28A PPAK SO-8

Vishay Siliconix
3,071 -

RFQ

SI7469DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 28A (Tc) 4.5V, 10V 25mOhm @ 10.2A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 40 V - 5.2W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD50P04-09L-E3

SUD50P04-09L-E3

MOSFET P-CH 40V 50A TO252

Vishay Siliconix
342 -

RFQ

SUD50P04-09L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 9.4mOhm @ 24A, 10V 3V @ 250µA 150 nC @ 10 V ±20V 4800 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFD220PBF

IRFD220PBF

MOSFET N-CH 200V 800MA 4DIP

Vishay Siliconix
7,490 -

RFQ

IRFD220PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 800mA (Ta) 10V 800mOhm @ 480mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
SIDR392DP-T1-GE3

SIDR392DP-T1-GE3

MOSFET N-CH 30V 82A/100A PPAK

Vishay Siliconix
3,639 -

RFQ

SIDR392DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 82A (Ta), 100A (Tc) 4.5V, 10V 0.62mOhm @ 20A, 10V 2.2V @ 250µA 188 nC @ 10 V +20V, -16V 9530 pF @ 15 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7858ADP-T1-E3

SI7858ADP-T1-E3

MOSFET N-CH 12V 20A PPAK SO-8

Vishay Siliconix
2,052 -

RFQ

SI7858ADP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 20A (Ta) 2.5V, 4.5V 2.6mOhm @ 29A, 4.5V 1.5V @ 250µA 80 nC @ 4.5 V ±8V 5700 pF @ 6 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF820PBF

IRF820PBF

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix
3,425 -

RFQ

IRF820PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD50P08-25L_GE3

SQD50P08-25L_GE3

MOSFET P-CH 80V 50A TO252AA

Vishay Siliconix
2,579 -

RFQ

SQD50P08-25L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 4.5V, 10V 25mOhm @ 10.5A, 10V 2.5V @ 250µA 137 nC @ 10 V ±20V 5350 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ144AE-T1_GE3

SQJQ144AE-T1_GE3

MOSFET N-CH 40V 575A PPAK 8 X 8

Vishay Siliconix
3,982 -

RFQ

SQJQ144AE-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 575A (Tc) 10V 0.9mOhm @ 20A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 9020 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7450DP-T1-GE3

SI7450DP-T1-GE3

MOSFET N-CH 200V 3.2A PPAK SO-8

Vishay Siliconix
2,613 -

RFQ

SI7450DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.2A (Ta) 6V, 10V 80mOhm @ 4A, 10V 4.5V @ 250µA 42 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ4401EY-T1_GE3

SQ4401EY-T1_GE3

MOSFET P-CH 40V 17.3A 8SO

Vishay Siliconix
3,406 -

RFQ

SQ4401EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 17.3A (Tc) 4.5V, 10V 14mOhm @ 10.5A, 10V 2.5V @ 250µA 115 nC @ 10 V ±20V 4250 pF @ 20 V - 7.14W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7463DP-T1-GE3

SI7463DP-T1-GE3

MOSFET P-CH 40V 11A PPAK SO-8

Vishay Siliconix
3,468 -

RFQ

SI7463DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 11A (Ta) 4.5V, 10V 9.2mOhm @ 18.6A, 10V 3V @ 250µA 140 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR826DP-T1-GE3

SIR826DP-T1-GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
3,121 -

RFQ

SIR826DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.8V @ 250µA 90 nC @ 10 V ±20V 2900 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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