Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIDR626LDP-T1-RE3

SIDR626LDP-T1-RE3

MOSFET N-CH 60V 45.6A/2.4A PPAK

Vishay Siliconix
2,432 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 45.6A (Ta), 2.4A (Tc) 4.5V, 10V 1.5mOhm @ 20A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 5900 pF @ 30 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM50P03-07_GE3

SQM50P03-07_GE3

MOSFET P-CHANNEL 30V 50A TO263

Vishay Siliconix
2,090 -

RFQ

SQM50P03-07_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 5380 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TA) Surface Mount
SQM40P10-40L_GE3

SQM40P10-40L_GE3

MOSFET P-CH 100V 40A TO263

Vishay Siliconix
3,220 -

RFQ

SQM40P10-40L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 40mOhm @ 17A, 10V 2.5V @ 250µA 134 nC @ 10 V ±20V 5295 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM50P04-09L_GE3

SQM50P04-09L_GE3

MOSFET P-CHANNEL 40V 50A TO263

Vishay Siliconix
3,828 -

RFQ

SQM50P04-09L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 9.4mOhm @ 50A, 10V 2.5V @ 250µA 145 nC @ 10 V ±20V 6045 pF @ 10 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

MOSFET N-CH 150V 64.6A PPAK

Vishay Siliconix
3,481 -

RFQ

SIDR622DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 64.6A (Ta), 56.7A (Tc) 7.5V, 10V 17.7mOhm @ 20A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 1516 pF @ 75 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD19N20-90-E3

SUD19N20-90-E3

MOSFET N-CH 200V 19A TO252

Vishay Siliconix
3,158 -

RFQ

SUD19N20-90-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 6V, 10V 90mOhm @ 5A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1800 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF730PBF-BE3

IRF730PBF-BE3

MOSFET N-CH 400V 5.5A TO220AB

Vishay Siliconix
2,681 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9310PBF

IRFU9310PBF

MOSFET P-CH 400V 1.8A TO251AA

Vishay Siliconix
3,310 -

RFQ

IRFU9310PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF830PBF

IRF830PBF

MOSFET N-CH 500V 4.5A TO220AB

Vishay Siliconix
3,500 -

RFQ

IRF830PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

MOSFET N-CH 60V 200A PPAK 8 X 8

Vishay Siliconix
2,609 -

RFQ

SQJQ466E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Tc) 10V 1.9mOhm @ 10A, 10V 3.5V @ 250µA 180 nC @ 10 V ±20V 10210 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ469EP-T1_GE3

SQJ469EP-T1_GE3

MOSFET P-CH 80V 32A PPAK SO-8

Vishay Siliconix
2,475 -

RFQ

SQJ469EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 32A (Tc) 6V, 10V 25mOhm @ 10.2A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 5100 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7884BDP-T1-E3

SI7884BDP-T1-E3

MOSFET N-CH 40V 58A PPAK SO-8

Vishay Siliconix
2,737 -

RFQ

SI7884BDP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Tc) 4.5V, 10V 7.5mOhm @ 16A, 10V 3V @ 250µA 77 nC @ 10 V ±20V 3540 pF @ 20 V - 4.6W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD9024PBF

IRFD9024PBF

MOSFET P-CH 60V 1.6A 4DIP

Vishay Siliconix
2,169 -

RFQ

IRFD9024PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 280mOhm @ 960mA, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRF840STRLPBF

IRF840STRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,164 -

RFQ

IRF840STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD024PBF

IRFD024PBF

MOSFET N-CH 60V 2.5A 4DIP

Vishay Siliconix
2,264 -

RFQ

IRFD024PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta) 10V 100mOhm @ 1.5A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
SQJQ100E-T1_GE3

SQJQ100E-T1_GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix
2,483 -

RFQ

SQJQ100E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.5mOhm @ 20A, 10V 3.5V @ 250µA 165 nC @ 10 V ±20V 14780 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7738DP-T1-GE3

SI7738DP-T1-GE3

MOSFET N-CH 150V 30A PPAK SO-8

Vishay Siliconix
3,625 -

RFQ

SI7738DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Tc) 10V 38mOhm @ 7.7A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2100 pF @ 75 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM55P06-19L-E3

SUM55P06-19L-E3

MOSFET P-CH 60V 55A TO263

Vishay Siliconix
2,502 -

RFQ

SUM55P06-19L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 4.5V, 10V 19mOhm @ 30A, 10V 3V @ 250µA 115 nC @ 10 V ±20V 3500 pF @ 25 V - 3.75W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540STRLPBF

IRF9540STRLPBF

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix
3,456 -

RFQ

IRF9540STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD40N10-25-E3

SUD40N10-25-E3

MOSFET N-CH 100V 40A TO252

Vishay Siliconix
2,034 -

RFQ

SUD40N10-25-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 25mOhm @ 40A, 10V 3V @ 250µA 60 nC @ 10 V ±20V 2400 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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