Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU9120PBF

IRFU9120PBF

MOSFET P-CH 100V 5.6A TO251AA

Vishay Siliconix
3,782 -

RFQ

IRFU9120PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIZ24GPBF

IRFIZ24GPBF

MOSFET N-CH 60V 14A TO220-3

Vishay Siliconix
2,991 -

RFQ

IRFIZ24GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUM10250E-GE3

SUM10250E-GE3

MOSFET N-CH 250V 63.5A D2PAK

Vishay Siliconix
3,034 -

RFQ

SUM10250E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 250 V 63.5A (Tc) 7.5V, 10V 31mOhm @ 30A, 10V 4V @ 250µA 88 nC @ 10 V ±20V 3002 pF @ 125 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ463EP-T1_GE3

SQJ463EP-T1_GE3

MOSFET P-CH 40V 30A PPAK SO-8

Vishay Siliconix
2,556 -

RFQ

SQJ463EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 10mOhm @ 18A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 5875 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM40031EL_GE3

SQM40031EL_GE3

MOSFET P-CH 40V 120A D2PAK

Vishay Siliconix
2,209 -

RFQ

SQM40031EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2.5V @ 250µA 800 nC @ 10 V ±20V 39000 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM50028EM_GE3

SQM50028EM_GE3

MOSFET N-CH 60V 120A TO263-7

Vishay Siliconix
3,847 -

RFQ

SQM50028EM_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2mOhm @ 30A, 10V 3.5V @ 250µA 185 nC @ 10 V ±20V 11900 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM70040E-GE3

SUM70040E-GE3

MOSFET N-CH 100V 120A TO263

Vishay Siliconix
3,727 -

RFQ

SUM70040E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 7.5V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5100 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJQ141EL-T1_GE3

SQJQ141EL-T1_GE3

AUTOMOTIVE P-CHANNEL 40 V (D-S)

Vishay Siliconix
2,254 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 390A (Tc) 4.5V, 10V 2mOhm @ 10A, 10V 2.5V @ 250µA 731 nC @ 10 V ±20V 62190 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM60020E-GE3

SUM60020E-GE3

MOSFET N-CH 80V 150A TO263

Vishay Siliconix
2,485 -

RFQ

SUM60020E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 150A (Tc) 7.5V, 10V 2.1mOhm @ 30A, 10V 4V @ 250µA 227 nC @ 10 V ±20V 10680 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF640PBF

IRF640PBF

MOSFET N-CH 200V 18A TO220AB

Vishay Siliconix
499 -

RFQ

IRF640PBF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM110P06-8M9L_GE3

SQM110P06-8M9L_GE3

MOSFET P-CH 60V 110A TO263

Vishay Siliconix
2,686 -

RFQ

SQM110P06-8M9L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 8.9mOhm @ 30A, 10V 2.5V @ 250µA 200 nC @ 10 V ±20V 7450 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM40014M-GE3

SUM40014M-GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix
3,216 -

RFQ

SUM40014M-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) - 0.99Ohm @ 20A, 10V 2.4V @ 250µA 275 nC @ 10 V ±20V 15780 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF620SPBF

IRF620SPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
3,951 -

RFQ

IRF620SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44PBF

IRFZ44PBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
2,106 -

RFQ

IRFZ44PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQJQ112E-T1_GE3

SQJQ112E-T1_GE3

AUTOMOTIVE N-CHANNEL 100 V (D-S)

Vishay Siliconix
3,413 -

RFQ

SQJQ112E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 296A (Tc) 10V 2.53mOhm @ 20A, 10V 3.5V @ 250µA 272 nC @ 10 V ±20V 15945 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540PBF

IRF540PBF

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix
2,707 -

RFQ

IRF540PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9540PBF

IRF9540PBF

MOSFET P-CH 100V 19A TO220AB

Vishay Siliconix
3,955 -

RFQ

IRF9540PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQM120N04-1M7L_GE3

SQM120N04-1M7L_GE3

MOSFET N-CH 40V 120A TO263

Vishay Siliconix
2,408 -

RFQ

SQM120N04-1M7L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V 2.5V @ 250µA 285 nC @ 10 V ±20V 14606 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIE818DF-T1-E3

SIE818DF-T1-E3

MOSFET N-CH 75V 60A 10POLARPAK

Vishay Siliconix
3,227 -

RFQ

SIE818DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 60A (Tc) 4.5V, 10V 9.5mOhm @ 16A, 10V 3V @ 250µA 95 nC @ 10 V ±20V 3200 pF @ 38 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM120P06-07L_GE3

SQM120P06-07L_GE3

MOSFET P-CH 60V 120A TO263

Vishay Siliconix
2,430 -

RFQ

SQM120P06-07L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2.5V @ 250µA 270 nC @ 10 V ±20V 14280 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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