Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUP90100E-GE3

SUP90100E-GE3

N-CHANNEL 200 V (D-S) MOSFET TO-

Vishay Siliconix
2,082 -

RFQ

SUP90100E-GE3

Ficha técnica

Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 7.5V, 10V 10.9mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3930 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUM50010E-GE3

SUM50010E-GE3

MOSFET N-CH 60V 150A TO263

Vishay Siliconix
3,818 -

RFQ

SUM50010E-GE3

Ficha técnica

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 7.5V, 10V 1.75mOhm @ 30A, 10V 4V @ 250µA 212 nC @ 10 V ±20V 10895 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540SPBF

IRF9540SPBF

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix
3,803 -

RFQ

IRF9540SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUP60061EL-GE3

SUP60061EL-GE3

P-CHANNEL 80 V (D-S) MOSFET TO-2

Vishay Siliconix
2,671 -

RFQ

SUP60061EL-GE3

Ficha técnica

Bulk TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 150A (Tc) 4.5V, 10V 5.8mOhm @ 20A, 10V 2.5V @ 250µA 218 nC @ 10 V ±20V 9600 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP450APBF

IRFP450APBF

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix
490 -

RFQ

IRFP450APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 2038 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP250PBF

IRFP250PBF

MOSFET N-CH 200V 30A TO247-3

Vishay Siliconix
2,887 -

RFQ

IRFP250PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 85mOhm @ 18A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPE50PBF

IRFPE50PBF

MOSFET N-CH 800V 7.8A TO247-3

Vishay Siliconix
2,862 -

RFQ

IRFPE50PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 7.8A (Tc) 10V 1.2Ohm @ 4.7A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 3100 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP100N60E-GE3

SIHP100N60E-GE3

MOSFET N-CH 600V 30A TO220AB

Vishay Siliconix
1,000 -

RFQ

SIHP100N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD50N06-09L_GE3

SQD50N06-09L_GE3

MOSFET N-CH 60V 50A TO252

Vishay Siliconix
8,000 -

RFQ

SQD50N06-09L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 3065 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFPG50PBF

IRFPG50PBF

MOSFET N-CH 1000V 6.1A TO247-3

Vishay Siliconix
2,271 -

RFQ

IRFPG50PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 6.1A (Tc) 10V 2Ohm @ 3.6A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB30N60E-GE3

SIHB30N60E-GE3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix
2,445 -

RFQ

SIHB30N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFPS40N50L-GE3

SIHFPS40N50L-GE3

POWER MOSFET SUPER-247, 100 M @

Vishay Siliconix
2,977 -

RFQ

SIHFPS40N50L-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG47N60E-E3

SIHG47N60E-E3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix
3,223 -

RFQ

SIHG47N60E-E3

Ficha técnica

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±30V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG80N60E-GE3

SIHG80N60E-GE3

MOSFET N-CH 600V 80A TO247AC

Vishay Siliconix
3,156 -

RFQ

SIHG80N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 80A (Tc) 10V 30mOhm @ 40A, 10V 4V @ 250µA 443 nC @ 10 V ±30V 6900 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIUD401ED-T1-GE3

SIUD401ED-T1-GE3

MOSFET P-CH 30V 500MA PPAK 0806

Vishay Siliconix
2,560 -

RFQ

SIUD401ED-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 500mA (Ta) 2.5V, 10V 1.573Ohm @ 200mA, 10V 1.4V @ 250µA 2 nC @ 10 V ±12V 33 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIUD406ED-T1-GE3

SIUD406ED-T1-GE3

MOSFET N-CH 30V 500MA PPAK 0806

Vishay Siliconix
2,571 -

RFQ

SIUD406ED-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 500mA (Ta) 1.8V, 4.5V 1.46Ohm @ 200mA, 4.5V 1.1V @ 250µA 0.6 nC @ 4.5 V ±8V 17 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3453DV-T1-GE3

SI3453DV-T1-GE3

MOSFET P-CHANNEL 30V 3.4A 6TSOP

Vishay Siliconix
2,158 -

RFQ

SI3453DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3.4A (Tc) 4.5V, 10V 165mOhm @ 2.5A, 10V 2.5V @ 250µA 6.8 nC @ 10 V ±20V 155 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3456DDV-T1-GE3

SI3456DDV-T1-GE3

MOSFET N-CH 30V 6.3A 6TSOP

Vishay Siliconix
2,139 -

RFQ

SI3456DDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Tc) 4.5V, 10V 40mOhm @ 5A, 10V 3V @ 250µA 9 nC @ 10 V ±20V 325 pF @ 15 V - 1.7W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1424EDH-T1-GE3

SI1424EDH-T1-GE3

MOSFET N-CH 20V 4A SOT-363

Vishay Siliconix
2,090 -

RFQ

SI1424EDH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 4.5V 33mOhm @ 5A, 4.5V 1V @ 250µA 18 nC @ 8 V ±8V - - 1.56W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3456DDV-T1-E3

SI3456DDV-T1-E3

MOSFET N-CH 30V 6.3A 6TSOP

Vishay Siliconix
2,036 -

RFQ

SI3456DDV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Tc) 4.5V, 10V 40mOhm @ 5A, 10V 3V @ 250µA 9 nC @ 10 V ±20V 325 pF @ 15 V - 1.7W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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