Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI1317DL-T1-GE3

SI1317DL-T1-GE3

MOSFET P-CH 20V 1.4A SOT323

Vishay Siliconix
2,082 -

RFQ

SI1317DL-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 1.4A (Tc) 1.8V, 4.5V 150mOhm @ 1.4A, 4.5V 800mV @ 250µA 6.5 nC @ 4.5 V ±8V 272 pF @ 10 V - 500mW (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI3440ADV-T1-GE3

SI3440ADV-T1-GE3

MOSFET N-CH 150V 2.2A 6TSOP

Vishay Siliconix
2,493 -

RFQ

SI3440ADV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.2A (Tc) 7.5V, 10V 380mOhm @ 1.5A, 10V 4V @ 250µA 4 nC @ 10 V ±20V 80 pF @ 75 V - 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2304BDS-T1-E3

SI2304BDS-T1-E3

MOSFET N-CH 30V 2.6A SOT23-3

Vishay Siliconix
2,630 -

RFQ

SI2304BDS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 70mOhm @ 2.5A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 225 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8810EDB-T2-E1

SI8810EDB-T2-E1

MOSFET N-CH 20V 2.1A MICROFOOT

Vishay Siliconix
3,919 -

RFQ

SI8810EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.1A (Ta) 1.5V, 4.5V 72mOhm @ 1A, 4.5V 900mV @ 250µA 8 nC @ 8 V ±8V 245 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1401EDH-T1-GE3

SI1401EDH-T1-GE3

MOSFET P-CH 12V 4A SC70-6

Vishay Siliconix
2,066 -

RFQ

SI1401EDH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 4A (Tc) 1.5V, 4.5V 34mOhm @ 5.5A, 4.5V 1V @ 250µA 36 nC @ 8 V ±10V - - 1.6W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8816EDB-T2-E1

SI8816EDB-T2-E1

MOSFET N-CH 30V 4MICROFOOT

Vishay Siliconix
3,892 -

RFQ

SI8816EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 2.5V, 10V 109mOhm @ 1A, 10V 1.4V @ 250µA 8 nC @ 10 V ±12V 195 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3474DV-T1-GE3

SI3474DV-T1-GE3

MOSFET N-CH 100V 3.8A 6TSOP

Vishay Siliconix
3,042 -

RFQ

SI3474DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 3.8A (Tc) 4.5V, 10V 126mOhm @ 2A, 10V 3V @ 250µA 10.4 nC @ 10 V ±20V 196 pF @ 50 V - 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8808DB-T2-E1

SI8808DB-T2-E1

MOSFET N-CH 30V 4MICROFOOT

Vishay Siliconix
3,171 -

RFQ

SI8808DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.8A (Ta) 1.5V, 4.5V 95mOhm @ 1A, 4.5V 900mV @ 250µA 10 nC @ 8 V ±8V 330 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA449DJ-T1-GE3

SIA449DJ-T1-GE3

MOSFET P-CH 30V 12A PPAK SC70-6

Vishay Siliconix
2,655 -

RFQ

SIA449DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 2.5V, 10V 20mOhm @ 6A, 10V 1.5V @ 250µA 72 nC @ 10 V ±12V 2140 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB441EDK-T1-GE3

SIB441EDK-T1-GE3

MOSFET P-CH 12V 9A PPAK SC75-6

Vishay Siliconix
2,998 -

RFQ

SIB441EDK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 9A (Tc) 1.5V, 4.5V 25.5mOhm @ 4A, 4.5V 900mV @ 250µA 33 nC @ 8 V ±8V 1180 pF @ 6 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2366DS-T1-GE3

SI2366DS-T1-GE3

MOSFET N-CH 30V 5.8A SOT23-3

Vishay Siliconix
3,027 -

RFQ

SI2366DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Tc) 10V 36mOhm @ 4.5A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 335 pF @ 15 V - 1.25W (Ta), 2.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

Vishay Siliconix
3,613 -

RFQ

SIA477EDJT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 12 V 12A (Tc) 1.8V, 4.5V 13mOhm @ 5A, 4.5V 1V @ 250µA 50 nC @ 4.5 V ±8V 3050 pF @ 6 V - 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4403DDY-T1-GE3

SI4403DDY-T1-GE3

MOSFET P-CH 20V 15.4A 8SOIC

Vishay Siliconix
3,648 -

RFQ

SI4403DDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 15.4A (Tc) 1.8V, 4.5V 14mOhm @ 9A, 4.5V 1V @ 250µA 99 nC @ 8 V ±8V 3250 pF @ 10 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2319DDS-T1-GE3

SI2319DDS-T1-GE3

MOSFET P-CH 40V 2.7A/3.6A SOT23

Vishay Siliconix
2,065 -

RFQ

SI2319DDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 40 V 2.7A (Ta), 3.6A (Tc) 4.5V, 10V 75mOhm @ 2.7A, 10V 2.5V @ 250µA 19 nC @ 10 V ±20V 650 pF @ 20 V - 1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8466EDB-T2-E1

SI8466EDB-T2-E1

MOSFET N-CH 8V 4MICROFOOT

Vishay Siliconix
2,399 -

RFQ

SI8466EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8 V 3.6A (Ta) 1.2V, 4.5V 43mOhm @ 2A, 4.5V 700mV @ 250µA 13 nC @ 4.5 V ±5V 710 pF @ 4 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1480DH-T1-GE3

SI1480DH-T1-GE3

MOSFET N-CH 100V 2.6A SC70-6

Vishay Siliconix
3,641 -

RFQ

SI1480DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 2.6A (Tc) 4.5V, 10V 200mOhm @ 1.9A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 130 pF @ 50 V - 1.5W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA447DJ-T1-GE3

SIA447DJ-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

Vishay Siliconix
3,313 -

RFQ

SIA447DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 12A (Tc) 1.5V, 4.5V 13.5mOhm @ 7A, 4.5V 850mV @ 250µA 80 nC @ 8 V ±8V 2880 pF @ 6 V - 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA445EDJT-T1-GE3

SIA445EDJT-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix
3,982 -

RFQ

SIA445EDJT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 16.7mOhm @ 7A, 4.5V 1.2V @ 250µA 69 nC @ 10 V ±12V 2180 pF @ 10 V - 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

MOSFET P-CH 20V 2.2A SOT23-3

Vishay Siliconix
3,894 -

RFQ

SI2301BDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4.5V 100mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±8V 375 pF @ 6 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2307CDS-T1-BE3

SI2307CDS-T1-BE3

MOSFET P-CH 30V 2.7A/3.5A SOT23

Vishay Siliconix
3,568 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta), 3.5A (Tc) 4.5V, 10V 88mOhm @ 3.5A, 10V 3V @ 250µA 6.2 nC @ 4.5 V ±20V 340 pF @ 15 V - 1.1W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 5253545556575859...238Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário