Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQJA68EP-T1_GE3

SQJA68EP-T1_GE3

MOSFET N-CH 100V 14A PPAK SO-8L

Vishay Siliconix
3,226 -

RFQ

SQJA68EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 4.5V, 10V 92mOhm @ 4A, 10V 2.5V @ 250µA 8 nC @ 10 V ±20V 280 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA70EP-T1_GE3

SQJA70EP-T1_GE3

MOSFET N-CH 100V 14.7A PPAK SO-8

Vishay Siliconix
2,757 -

RFQ

SQJA70EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 14.7A (Tc) 10V 95mOhm @ 4A, 10V 3.5V @ 250µA 7 nC @ 10 V ±20V 220 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

MOSFET N-CH 30V 30A/60A PPAK SO8

Vishay Siliconix
3,358 -

RFQ

SIRA10BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 60A (Tc) 4.5V, 10V 3.6mOhm @ 10A, 10V 2.4V @ 250µA 36.2 nC @ 10 V +20V, -16V 1710 pF @ 15 V - 5W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ150EP-T1_GE3

SQJ150EP-T1_GE3

MOSFET N-CH 40V 66A PPAK SO-8

Vishay Siliconix
3,703 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 66A (Tc) 10V 8.4mOhm @ 15A, 10V 3.5V @ 250µA 20 nC @ 10 V ±20V 1274 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD20N10-66L-GE3

SUD20N10-66L-GE3

MOSFET N-CH 100V 16.9A TO252

Vishay Siliconix
2,603 -

RFQ

SUD20N10-66L-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 16.9A (Tc) 4.5V, 10V 66mOhm @ 6.6A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 860 pF @ 50 V - 2.1W (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQS484CENW-T1_GE3

SQS484CENW-T1_GE3

MOSFET N-CH 40V 16A PPAK 1212-8W

Vishay Siliconix
2,129 -

RFQ

SQS484CENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 2350 pF @ 25 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISS23DN-T1-GE3

SISS23DN-T1-GE3

MOSFET P-CH 20V 50A PPAK 1212-8S

Vishay Siliconix
3,837 -

RFQ

SISS23DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 1.8V, 4.5V 4.5mOhm @ 20A, 4.5V 900mV @ 250µA 300 nC @ 10 V ±8V 8840 pF @ 15 V - 4.8W (Ta), 57W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SQJ146EP-T1_GE3

SQJ146EP-T1_GE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix
2,907 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 7mOhm @ 15A, 10V 3.5V @ 250µA 27 nC @ 10 V ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI1411DH-T1-GE3

SI1411DH-T1-GE3

MOSFET P-CH 150V 420MA SOT363

Vishay Siliconix
3,294 -

RFQ

SI1411DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 420mA (Ta) 10V 2.6Ohm @ 500mA, 10V 4.5V @ 100µA 6.3 nC @ 10 V ±20V - - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3458BDV-T1-E3

SI3458BDV-T1-E3

MOSFET N-CH 60V 4.1A 6TSOP

Vishay Siliconix
3,638 -

RFQ

SI3458BDV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 4.1A (Tc) 4.5V, 10V 100mOhm @ 3.2A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 350 pF @ 30 V - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TN2404K-T1-GE3

TN2404K-T1-GE3

MOSFET N-CH 240V 200MA SOT23-3

Vishay Siliconix
3,442 -

RFQ

TN2404K-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 240 V 200mA (Ta) 2.5V, 10V 4Ohm @ 300mA, 10V 2V @ 250µA 8 nC @ 10 V ±20V - - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8851EDB-T2-E1

SI8851EDB-T2-E1

MOSFET P-CH 20V PWR MICRO FOOT

Vishay Siliconix
3,748 -

RFQ

SI8851EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 7.7A (Ta) 1.8V, 4.5V 8mOhm @ 7A, 4.5V 1V @ 250µA 180 nC @ 8 V ±8V 6900 pF @ 10 V - 660mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIS447DN-T1-GE3

SIS447DN-T1-GE3

MOSFET P-CH 20V 18A PPAK1212-8

Vishay Siliconix
3,211 -

RFQ

SIS447DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 18A (Tc) 2.5V, 10V 7.1mOhm @ 20A, 10V 1.2V @ 250µA 181 nC @ 10 V ±12V 5590 pF @ 10 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL014TRPBF

IRFL014TRPBF

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
3,986 -

RFQ

IRFL014TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 10V 200mOhm @ 1.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQS484ENW-T1_GE3

SQS484ENW-T1_GE3

MOSFET N-CH 40V 16A PPAK1212-8

Vishay Siliconix
3,245 -

RFQ

SQS484ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Tc) 4.5V, 10V 8mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

MOSFET P-CH 30V 50A PPAK1212-8S

Vishay Siliconix
3,203 -

RFQ

SISS27ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5.1mOhm @ 15A, 10V 2.2V @ 250µA 55 nC @ 4.5 V ±20V 4660 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQS411ENW-T1_GE3

SQS411ENW-T1_GE3

MOSFET P-CH 40V 16A PPAK1212-8W

Vishay Siliconix
3,211 -

RFQ

SQS411ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 16A (Tc) 4.5V, 10V 27.3mOhm @ 8A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 3191 pF @ 25 V - 39.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4420BDY-T1-E3

SI4420BDY-T1-E3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix
2,112 -

RFQ

SI4420BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4.5V, 10V 8.5mOhm @ 13.5A, 10V 3V @ 250µA 50 nC @ 10 V ±20V - - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA12DP-T1-GE3

SIRA12DP-T1-GE3

MOSFET N-CH 30V 25A PPAK SO-8

Vishay Siliconix
2,796 -

RFQ

SIRA12DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 4.3mOhm @ 10A, 10V 2.2V @ 250µA 45 nC @ 10 V +20V, -16V 2070 pF @ 15 V - 4.5W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3493BDV-T1-GE3

SI3493BDV-T1-GE3

MOSFET P-CH 20V 8A 6TSOP

Vishay Siliconix
2,704 -

RFQ

SI3493BDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 27.5mOhm @ 7A, 4.5V 900mV @ 250µA 43.5 nC @ 5 V ±8V 1805 pF @ 10 V - 2.08W (Ta), 2.97W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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