Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQJ415EP-T1_GE3

SQJ415EP-T1_GE3

MOSFET P-CH 40V 30A PPAK SO-8

Vishay Siliconix
2,466 -

RFQ

SQJ415EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 6000 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI2337DS-T1-GE3

SI2337DS-T1-GE3

MOSFET P-CH 80V 2.2A SOT23-3

Vishay Siliconix
2,164 -

RFQ

SI2337DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 2.2A (Tc) 6V, 10V 270mOhm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 500 pF @ 40 V - 760mW (Ta), 2.5W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SISS63DN-T1-GE3

SISS63DN-T1-GE3

MOSFET P-CH 20V 35.1/127.5A PPAK

Vishay Siliconix
2,518 -

RFQ

SISS63DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 35.1A (Ta), 127.5A (Tc) 2.5V, 10V 2.7mOhm @ 15A, 10V 1.5V @ 250µA 236 nC @ 8 V ±12V 7080 pF @ 10 V - 5W (Ta), 65.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQS484EN-T1_GE3

SQS484EN-T1_GE3

MOSFET N-CH 40V 16A PPAK1212-8

Vishay Siliconix
2,097 -

RFQ

SQS484EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Tc) 4.5V, 10V 9mOhm @ 16.4A, 10V 2.5V @ 250µA 39 nC @ 10 V ±20V 1855 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD15N06-42L_GE3

SQD15N06-42L_GE3

MOSFET N-CH 60V 15A TO252

Vishay Siliconix
3,054 -

RFQ

SQD15N06-42L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 4.5V, 10V 42mOhm @ 10A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 535 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4431EY-T1_GE3

SQ4431EY-T1_GE3

MOSFET P-CH 30V 10.8A 8SO

Vishay Siliconix
3,468 -

RFQ

SQ4431EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 10.8A (Tc) 10V 30mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1265 pF @ 15 V - 6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS462EN-T1_GE3

SQS462EN-T1_GE3

MOSFET N-CH 60V 8A PPAK1212-8

Vishay Siliconix
2,179 -

RFQ

SQS462EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 63mOhm @ 4.3A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 470 pF @ 25 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS407ENW-T1_GE3

SQS407ENW-T1_GE3

MOSFET P-CH 30V 16A PPAK1212-8W

Vishay Siliconix
2,490 -

RFQ

SQS407ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 10.8mOhm @ 12A, 10V 2.5V @ 250µA 77 nC @ 10 V ±20V 4572 pF @ 20 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS850EN-T1_GE3

SQS850EN-T1_GE3

MOSFET N-CH 60V 12A PPAK1212-8

Vishay Siliconix
3,915 -

RFQ

SQS850EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 21.5mOhm @ 6.1A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2021 pF @ 30 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7309DN-T1-E3

SI7309DN-T1-E3

MOSFET P-CH 60V 8A PPAK1212-8

Vishay Siliconix
2,235 -

RFQ

SI7309DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 115mOhm @ 3.9A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 600 pF @ 30 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5403DC-T1-GE3

SI5403DC-T1-GE3

MOSFET P-CH 30V 6A 1206-8

Vishay Siliconix
3,814 -

RFQ

SI5403DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Tc) 4.5V, 10V 30mOhm @ 7.2A, 10V 3V @ 250µA 42 nC @ 10 V ±20V 1340 pF @ 15 V - 2.5W (Ta), 6.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS106DN-T1-GE3

SIS106DN-T1-GE3

MOSFET N-CH 60V 9.8A/16A PPAK

Vishay Siliconix
2,526 -

RFQ

SIS106DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 9.8A (Ta), 16A (Tc) 7.5V, 10V 18.5mOhm @ 4A, 10V 4V @ 250µA 13.5 nC @ 10 V ±20V 540 pF @ 30 V - 3.2W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR167DP-T1-GE3

SIR167DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

Vishay Siliconix
3,000 -

RFQ

SIR167DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 5.5mOhm @ 15A, 10V 2.5V @ 250µA 111 nC @ 10 V ±25V 4380 pF @ 15 V - 65.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA96EP-T1_GE3

SQJA96EP-T1_GE3

MOSFET N-CH 80V 30A PPAK SO-8

Vishay Siliconix
2,382 -

RFQ

SQJA96EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 10V 21.5mOhm @ 10A, 10V 3.5V @ 250µA 25 nC @ 10 V ±20V 1200 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9010TRPBF

IRFR9010TRPBF

MOSFET P-CH 50V 5.3A DPAK

Vishay Siliconix
3,251 -

RFQ

IRFR9010TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS52DN-T1-GE3

SISS52DN-T1-GE3

MOSFET N-CH 30V 47.1A/162A PPAK

Vishay Siliconix
2,535 -

RFQ

SISS52DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 30 V 47.1A (Ta), 162A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.2V @ 250µA 65 nC @ 10 V +16V, -12V 2950 pF @ 15 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4431CDY-T1-E3

SI4431CDY-T1-E3

MOSFET P-CH 30V 9A 8SO

Vishay Siliconix
2,170 -

RFQ

SI4431CDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 32mOhm @ 7A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1006 pF @ 15 V - 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISH410DN-T1-GE3

SISH410DN-T1-GE3

MOSFET N-CH 20V 22A/35A PPAK

Vishay Siliconix
2,212 -

RFQ

SISH410DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 22A (Ta), 35A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1600 pF @ 10 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA60EP-T1_GE3

SQJA60EP-T1_GE3

MOSFET N-CH 60V 30A PPAK SO-8

Vishay Siliconix
3,100 -

RFQ

SQJA60EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 12.5mOhm @ 8A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1600 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA60EP-T1_BE3

SQJA60EP-T1_BE3

MOSFET N-CH 60V 30A POWERPAKSO-8

Vishay Siliconix
3,928 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 12.5mOhm @ 8A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1600 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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