Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SISS32LDN-T1-GE3

SISS32LDN-T1-GE3

MOSFET N-CH 80V 17.4A/63A PPAK

Vishay Siliconix
3,119 -

RFQ

SISS32LDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 17.4A (Ta), 63A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 10V 2.5V @ 250µA 57 nC @ 10 V ±20V 2550 pF @ 40 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ486EP-T1_GE3

SQJ486EP-T1_GE3

MOSFET N-CH 75V 30A PPAK SO-8

Vishay Siliconix
2,141 -

RFQ

SQJ486EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 30A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V 2.1V @ 250µA 34 nC @ 10 V ±20V 1386 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA94EP-T1_GE3

SQJA94EP-T1_GE3

MOSFET N-CH 80V 46A PPAK SO-8

Vishay Siliconix
2,963 -

RFQ

SQJA94EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 46A (Tc) 10V 13.5mOhm @ 10A, 10V 3.5V @ 250µA 35 nC @ 10 V ±20V 2000 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUB75P03-07-E3

SUB75P03-07-E3

MOSFET P-CH 30V 75A TO263

Vishay Siliconix
3,529 -

RFQ

SUB75P03-07-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 3V @ 250µA 240 nC @ 10 V ±20V 9000 pF @ 25 V - 3.75W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM110N04-2M3L-E3

SUM110N04-2M3L-E3

MOSFET N-CH 40V 110A TO263

Vishay Siliconix
2,798 -

RFQ

SUM110N04-2M3L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 4.5V, 10V 2.3mOhm @ 30A, 10V 3V @ 250µA 360 nC @ 10 V ±20V 13600 pF @ 25 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM110N06-3M4L-E3

SUM110N06-3M4L-E3

MOSFET N-CH 60V 110A TO263

Vishay Siliconix
3,403 -

RFQ

SUM110N06-3M4L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 3V @ 250µA 300 nC @ 10 V ±20V 12900 pF @ 25 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM75N06-09L-E3

SUM75N06-09L-E3

MOSFET N-CH 60V 90A D2PAK

Vishay Siliconix
2,620 -

RFQ

SUM75N06-09L-E3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) - 9.3mOhm @ 30A, 10V 3V @ 250µA 75 nC @ 10 V - 2400 pF @ 25 V - - - Surface Mount
BS250KL-TR1-E3

BS250KL-TR1-E3

MOSFET P-CH 60V 270MA TO92-18RM

Vishay Siliconix
2,891 -

RFQ

BS250KL-TR1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 270mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V 3V @ 250µA 3 nC @ 15 V ±20V - - 800mW (Ta) -55°C ~ 150°C (TJ) Through Hole
SI1012R-T1-E3

SI1012R-T1-E3

MOSFET N-CH 20V 500MA SC75A

Vishay Siliconix
2,595 -

RFQ

SI1012R-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4.5V 700mOhm @ 600mA, 4.5V 900mV @ 250µA 0.75 nC @ 4.5 V ±6V - - 150mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1012X-T1-E3

SI1012X-T1-E3

MOSFET N-CH 20V 500MA SC89-3

Vishay Siliconix
2,301 -

RFQ

SI1012X-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4.5V 700mOhm @ 600mA, 4.5V 900mV @ 250µA 0.75 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1013R-T1-E3

SI1013R-T1-E3

MOSFET P-CH 20V 350MA SC75A

Vishay Siliconix
3,720 -

RFQ

SI1013R-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5 nC @ 4.5 V ±6V - - 150mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1013X-T1-E3

SI1013X-T1-E3

MOSFET P-CH 20V 350MA SC89-3

Vishay Siliconix
3,700 -

RFQ

SI1013X-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1021R-T1-E3

SI1021R-T1-E3

MOSFET P-CH 60V 190MA SC75A

Vishay Siliconix
3,337 -

RFQ

SI1021R-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 190mA (Ta) 4.5V, 10V 4Ohm @ 500mA, 10V 3V @ 250µA 1.7 nC @ 15 V ±20V 23 pF @ 25 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1022R-T1-E3

SI1022R-T1-E3

MOSFET N-CH 60V 330MA SC75A

Vishay Siliconix
3,584 -

RFQ

SI1022R-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 330mA (Ta) 4.5V, 10V 1.25Ohm @ 500mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 30 pF @ 25 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1031R-T1-E3

SI1031R-T1-E3

MOSFET P-CH 20V 140MA SC75A

Vishay Siliconix
3,911 -

RFQ

SI1031R-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 140mA (Ta) 1.5V, 4.5V 8Ohm @ 150mA, 4.5V 1.2V @ 250µA 1.5 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1032R-T1-E3

SI1032R-T1-E3

MOSFET N-CH 20V 140MA SC75A

Vishay Siliconix
2,805 -

RFQ

SI1032R-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 140mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1032X-T1-E3

SI1032X-T1-E3

MOSFET N-CH 20V 200MA SC89-3

Vishay Siliconix
2,289 -

RFQ

SI1032X-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75 nC @ 4.5 V ±6V - - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1039X-T1-E3

SI1039X-T1-E3

MOSFET P-CH 12V 870MA SC89-6

Vishay Siliconix
3,029 -

RFQ

SI1039X-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 870mA (Ta) 1.8V, 4.5V 165mOhm @ 870mA, 4.5V 450mV @ 250µA (Min) 6 nC @ 4.5 V ±8V - - 170mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1050X-T1-E3

SI1050X-T1-E3

MOSFET N-CH 8V 1.34A SC89-6

Vishay Siliconix
2,281 -

RFQ

SI1050X-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 8 V 1.34A (Ta) 1.5V, 4.5V 86mOhm @ 1.34A, 4.5V 900mV @ 250µA 11.6 nC @ 5 V ±5V 585 pF @ 4 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1056X-T1-E3

SI1056X-T1-E3

MOSFET N-CH 20V 1.32A SC89-6

Vishay Siliconix
2,315 -

RFQ

SI1056X-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.32A (Ta) 1.8V, 4.5V 89mOhm @ 1.32A, 4.5V 950mV @ 250µA 8.7 nC @ 5 V ±8V 400 pF @ 10 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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