Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH96N20P

IXFH96N20P

MOSFET N-CH 200V 96A TO247AD

IXYS
2,050 -

RFQ

IXFH96N20P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH160N15T

IXTH160N15T

MOSFET N-CH 150V 160A TO247

IXYS
2,618 -

RFQ

IXTH160N15T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 160A (Tc) 10V 9.6mOhm @ 500mA, 10V 5V @ 1mA 160 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R075CPAFKSA1

IPW60R075CPAFKSA1

AUTOMOTIVE

Infineon Technologies
2,587 -

RFQ

IPW60R075CPAFKSA1

Ficha técnica

Tube * Active - - - - - - - - - - - - - -
IPDQ60R045CFD7XTMA1

IPDQ60R045CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
3,080 -

RFQ

Tape & Reel (TR) CoolMOS™ Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Surface Mount
SIHG64N65E-GE3

SIHG64N65E-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix
3,640 -

RFQ

SIHG64N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 32A, 10V 4V @ 250µA 369 nC @ 10 V ±30V 7497 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW70N65M2

STW70N65M2

MOSFET N-CH 650V 63A TO247-3

STMicroelectronics
2,959 -

RFQ

STW70N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 46mOhm @ 31.5A, 10V 4V @ 250µA 117 nC @ 10 V ±25V 5140 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT26N60P

IXTT26N60P

MOSFET N-CH 600V 26A TO268

IXYS
3,874 -

RFQ

IXTT26N60P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP6N120P

IXFP6N120P

MOSFET N-CH 1200V 6A TO220AB

IXYS
2,493 -

RFQ

IXFP6N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG61N65EF-GE3

SIHG61N65EF-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix
2,843 -

RFQ

SIHG61N65EF-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 30.5A, 10V 4V @ 250µA 371 nC @ 10 V ±30V 7407 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW61N65EF-GE3

SIHW61N65EF-GE3

MOSFET N-CH 650V 64A TO247AD

Vishay Siliconix
2,737 -

RFQ

SIHW61N65EF-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 30.5A, 10V 4V @ 250µA 371 nC @ 10 V ±30V 7407 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDCTR30120A

NDCTR30120A

MOSFET N-CH 1200V 30A SMD

onsemi
3,154 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
3400

3400

N30V,RD(MAX)<27M@10V,RD(MAX)<33M

Goford Semiconductor
2,976 -

RFQ

3400

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A - 59mOhm @ 2.8A, 2.5V 1.4V @ 250µA 9.5 nC @ 4.5 V ±12V 820 pF @ 15 V - 1.4W -55°C ~ 150°C (TJ) Surface Mount
PJD9P06A_L2_00001

PJD9P06A_L2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,937 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta), 7A (Tc) 4.5V, 10V 190mOhm @ 3.5A, 10V 2.5V @ 250µA 8.3 nC @ 10 V ±20V 430 pF @ 30 V - 2W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJL3415A

YJL3415A

P-CH MOSFET 20V 5.6A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,890 -

RFQ

YJL3415A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 5.6A (Ta) 1.8V, 4.5V 42mOhm @ 5.6A, 4.5V 1V @ 250µA 10.98 nC @ 4.5 V ±12V 1010 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJE8404_R1_00001

PJE8404_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,370 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 600mA (Ta) 1.8V, 4.5V 220mOhm @ 600mA, 4,5V 1.3V @ 250µA 1.5 nC @ 4.5 V ±8V 93 pF @ 15 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJC7438_R1_00001

PJC7438_R1_00001

SOT-323, MOSFET

Panjit International Inc.
2,252 -

RFQ

PJC7438_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 400mA (Ta) 1.8V, 10V 1.45Ohm @ 500mA, 10V 1V @ 250µA 0.95 nC @ 4.5 V ±20V 36 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJC7403_R1_00001

PJC7403_R1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,040 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 700mA (Ta) 1.8V, 4.5V 325mOhm @ 700mA, 4.5V 1V @ 250µA 2.2 nC @ 4.5 V ±8V 165 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDG330P

FDG330P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
43,250 -

RFQ

FDG330P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) - 110mOhm @ 2A, 4.5V 1.5V @ 250µA 7 nC @ 4.5 V ±8V 477 pF @ 6 V - 480mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
G15

G15

P-12V,RD(MAX)<[email protected],RD(MAX)<

Goford Semiconductor
1,909 -

RFQ

G15

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 2.5V, 4.5V 21mOhm @ 1A, 4.5V 1.2V @ 250µA 48 nC @ 4.5 V ±8V 2700 pF @ 10 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8796

FDD8796

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
34,346 -

RFQ

FDD8796

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2610 pF @ 13 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário