Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IMT65R107M1HXTMA1

IMT65R107M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,415 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R022M1HXTMA1

IMT65R022M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,422 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R039M1HXTMA1

IMT65R039M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,866 -

RFQ

IMT65R039M1HXTMA1

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BSC0303LSATMA1

BSC0303LSATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
3,063 -

RFQ

BSC0303LSATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 68A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 2.4V @ 72µA 51 nC @ 10 V ±20V 4900 pF @ 60 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMT65R083M1HXTMA1

IMT65R083M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,717 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R048M1HXTMA1

IMT65R048M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,396 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPA65R190DEXKSA1

IPA65R190DEXKSA1

MOSFET

Infineon Technologies
3,830 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
IPA60R650CEE8210XKSA1

IPA60R650CEE8210XKSA1

MOSFET

Infineon Technologies
3,963 -

RFQ

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.9A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
CTLM7110-M832D BK

CTLM7110-M832D BK

TRANSISTOR

Central Semiconductor Corp
2,323 -

RFQ

CTLM7110-M832D BK

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.5V, 4.5V 250mOhm @ 100mA, 1.5V 1.2V @ 1mA 2.4 nC @ 4.5 V 8V 220 pF @ 10 V Schottky Diode (Isolated) 1.65W (Ta) -65°C ~ 150°C (TJ) Surface Mount
CTLM7110-M832D TR

CTLM7110-M832D TR

TRANSISTOR

Central Semiconductor Corp
3,728 -

RFQ

CTLM7110-M832D TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.5V, 4.5V 250mOhm @ 100mA, 1.5V 1.2V @ 1mA 2.4 nC @ 4.5 V 8V 220 pF @ 10 V Schottky Diode (Isolated) 1.65W (Ta) -65°C ~ 150°C (TJ) Surface Mount
CTLM8110-M832D TR

CTLM8110-M832D TR

TRANSISTOR

Central Semiconductor Corp
3,672 -

RFQ

CTLM8110-M832D TR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 860mA (Ta) 1.8V, 4.5V 240mOhm @ 200mA, 1.8V 1V @ 250µA 3.56 nC @ 4.5 V 8V 200 pF @ 16 V Schottky Diode (Isolated) 1.65W (Ta) -65°C ~ 150°C (TJ) Surface Mount
CTLM8110-M832D BK

CTLM8110-M832D BK

TRANSISTOR

Central Semiconductor Corp
3,173 -

RFQ

CTLM8110-M832D BK

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 860mA (Ta) 1.8V, 4.5V 240mOhm @ 200mA, 1.8V 1V @ 250µA 3.56 nC @ 4.5 V 8V 200 pF @ 16 V Schottky Diode (Isolated) 1.65W (Ta) -65°C ~ 150°C (TJ) Surface Mount
MSC180SMA120SA

MSC180SMA120SA

MOSFET SIC 1200 V 180 MOHM TO-26

Microchip Technology
2,852 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 225mOhm @ 8A, 20V 3.26V @ 500µA 34 nC @ 20 V +23V, -10V 510 pF @ 1000 V - 125W (Tc) -55°C ~ 175°C (TJ) -
MSC060SMA070SA

MSC060SMA070SA

MOSFET SIC 700 V 60 MOHM TO-263-

Microchip Technology
2,739 -

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 700 V 37A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC080SMA120SA

MSC080SMA120SA

MOSFET SIC 1200 V 80 MOHM TO-263

Microchip Technology
3,138 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC090SMA070SA

MSC090SMA070SA

MOSFET SIC 700 V 90 MOHM TO-263-

Microchip Technology
3,473 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 25A (Tc) 20V 115mOhm @ 15A, 20V 2.4V @ 750µA 38 nC @ 20 V +23V, -10V 785 pF @ 700 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC360SMA120SA

MSC360SMA120SA

MOSFET SIC 1200 V 360 MOHM TO-26

Microchip Technology
3,951 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 20V 450mOhm @ 5A, 20V 3.14V @ 250µA 21 nC @ 20 V +23V, -10V 255 pF @ 1000 V - 71W (Tc) -55°C ~ 175°C (TJ) -
CMLM8205 BK

CMLM8205 BK

DIODE

Central Semiconductor Corp
3,336 -

RFQ

CMLM8205 BK

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 280mA (Ta) 5V, 10V 2.5Ohm @ 500mA, 10V 2.5V @ 250µA - 20V 70 pF @ 25 V Schottky Diode (Isolated) 150mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
CMLM8205 TR

CMLM8205 TR

DIODE

Central Semiconductor Corp
2,828 -

RFQ

CMLM8205 TR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 280mA (Ta) 5V, 10V 2.5Ohm @ 500mA, 10V 2.5V @ 250µA - 20V 70 pF @ 25 V Schottky Diode (Isolated) 150mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
CMS2305A-HF

CMS2305A-HF

MOSFET

Comchip Technology
2,132 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 1.8V, 10V 25mOhm @ 10A, 10V 1.2V @ 250µA 10 nC @ 4.5 V ±12V 735 pF @ 25 V - 1.38W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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