Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ECH8659-M-TL-H

ECH8659-M-TL-H

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
23,899 -

RFQ

ECH8659-M-TL-H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMA1028NZ

FDMA1028NZ

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
274,125 -

RFQ

FDMA1028NZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA60R1K5CEXKSA1

IPA60R1K5CEXKSA1

IPA60R1K5 - 600V, N-CHANNEL POWE

Infineon Technologies
39,500 -

RFQ

IPA60R1K5CEXKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V Super Junction 20W (Tc) -40°C ~ 150°C (TJ) Through Hole
PJL9407_R2_00001

PJL9407_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,475 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 50mOhm @ 3A, 10V 2.5V @ 250µA 4.8 nC @ 4.5 V ±20V 516 pF @ 15 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G3401L

G3401L

P30V,RD(MAX)<60M@-10V,RD(MAX)<70

Goford Semiconductor
2,990 -

RFQ

G3401L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A - 60mOhm @ 2A, 10V 1.3V @ 250µA 8.5 nC @ 4.5 V ±12V 880 pF @ 15 V - 1.2W -55°C ~ 150°C (TJ) Surface Mount
G3404LL

G3404LL

N30V,RD(MAX)<22M@10V,RD(MAX)<35M

Goford Semiconductor
2,802 -

RFQ

G3404LL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Tc) 4.5V, 10V 22mOhm @ 4.2A, 10V 2V @ 250µA 12.2 nC @ 10 V ±20V 541 pF @ 15 V - 1.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJE8428_R1_00001

PJE8428_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,240 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 300mA (Ta) 1.2V, 4.5V 1.2Ohm @ 300mA, 4.5V 1V @ 250µA 0.9 nC @ 4.5 V ±10V 45 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJW4N06A_R2_00001

PJW4N06A_R2_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
1,375 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 4.5V, 10V 100mOhm @ 3A, 10V 2.5V @ 250µA 5.1 nC @ 4.5 V ±20V 509 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJA3438_R1_00001

PJA3438_R1_00001

SOT-23, MOSFET

Panjit International Inc.
1,145 -

RFQ

PJA3438_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 500mA (Ta) 1.8V, 10V 1.45Ohm @ 500mA, 10V 1V @ 250µA 0.95 nC @ 4.5 V ±20V 36 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
GT1003D

GT1003D

N100V,RD(MAX)<130M@10V,RD(MAX)<1

Goford Semiconductor
2,950 -

RFQ

GT1003D

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 3A - 130mOhm @ 3A, 10V 2.6V @ 250µA 5.2 nC @ 10 V ±20V 212 pF @ 50 V - 2W -55°C ~ 150°C (TJ) Surface Mount
PJC7410_R1_00001

PJC7410_R1_00001

20V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,878 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 400mOhm @ 500mA, 4.5V 900mV @ 250µA 1.4 nC @ 4.5 V ±10V 67 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
G06N10

G06N10

N100V,RD(MAX)<240M@10V,VTH1.2V~3

Goford Semiconductor
2,463 -

RFQ

G06N10

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 6A - 240mOhm @ 6A, 10V 3V @ 250µA 6.2 nC @ 10 V ±20V 190 pF @ 50 V - 25W -55°C ~ 175°C (TJ) Surface Mount
G35N02K

G35N02K

N20V,RD(MAX)<[email protected],RD(MAX)<18

Goford Semiconductor
2,360 -

RFQ

G35N02K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 4.5V 13mOhm @ 20A, 4.5V 1.2V @ 250µA 24 nC @ 4.5 V ±12V 1380 pF @ 10 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJA3404-AU_R1_000A1

PJA3404-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.
1,700 -

RFQ

PJA3404-AU_R1_000A1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Ta) 4.5V, 10V 30mOhm @ 5.6A, 10V 2.1V @ 250µA 7.8 nC @ 10 V ±20V 343 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJC7409_R1_00001

PJC7409_R1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
1,230 -

RFQ

PJC7409_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.2Ohm @ 500mA, 4.5V 1V @ 250µA 1.4 nC @ 4.5 V ±10V 38 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
GT095N10K

GT095N10K

N100V, RD(MAX)<10.5M@10V,RD(MAX)

Goford Semiconductor
4,972 -

RFQ

GT095N10K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) GT Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 1667 pF @ 50 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NX2301P,215

NX2301P,215

P-CHANNEL 20V 2A (TA) 400MW (TA)

NXP Semiconductors
159,000 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 120mOhm @ 1A, 4.5V 1.1V @ 250µA 6 nC @ 4.5 V ±8V 380 pF @ 6 V - 400mW (Ta), 2.8W (Tc) 150°C (TJ) Surface Mount
IPI45N06S4L08AKSA2

IPI45N06S4L08AKSA2

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
11,000 -

RFQ

IPI45N06S4L08AKSA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
9926

9926

N20V,RD(MAX)<[email protected],RD(MAX)<30

Goford Semiconductor
3,980 -

RFQ

9926

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6A - 25mOhm @ 4.5A, 4.5V 1.2V @ 250µA 10 nC @ 4.5 V ±10V 640 pF @ 10 V - 1.25W -55°C ~ 150°C (TJ) Surface Mount
PJQ4460AP-AU_R2_000A1

PJQ4460AP-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,402 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3.7A (Ta), 11A (Tc) 4.5V, 10V 72mOhm @ 6A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 509 pF @ 15 V - 2.4W (Ta), 23.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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