Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CMS25N03V8A-HF

CMS25N03V8A-HF

MOSFET

Comchip Technology
2,175 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
CMS03P06T6-HF

CMS03P06T6-HF

MOSFET

Comchip Technology
2,480 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
CMS01P10TA-HF

CMS01P10TA-HF

MOSFET

Comchip Technology
3,876 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NTMTS0D4N04CLTXG

NTMTS0D4N04CLTXG

MOSFET N-CH 40V 79.8A 8DFNW

onsemi
3,560 -

RFQ

NTMTS0D4N04CLTXG

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 553.8A (Tc) 4.5V, 10V 0.4mOhm @ 50A, 10V 2.5V @ 250µA 341 nC @ 10 V ±20V 20600 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH15N60

IXFH15N60

MOSFET N-CH 600V 15A TO-247AD

IXYS
2,338 -

RFQ

IXFH15N60

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 500mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH47N60-F085

FCH47N60-F085

MOSFET N-CH 600V 47A TO247-3

onsemi
3,012 -

RFQ

FCH47N60-F085

Ficha técnica

Tube,Tube Automotive, AEC-Q101, SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 79mOhm @ 47A, 10V 5V @ 250µA 250 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR4N100Q

IXFR4N100Q

MOSFET N-CH 1000V 3.5A ISOPLS247

IXYS
2,043 -

RFQ

IXFR4N100Q

Ficha técnica

Box HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 3.5A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVHL060N090SC1

NVHL060N090SC1

SICFET N-CH 900V 46A TO247-3

onsemi
3,178 -

RFQ

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +19V, -10V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
STWA63N65DM2

STWA63N65DM2

MOSFET N-CH 650V 60A TO247

STMicroelectronics
3,764 -

RFQ

STWA63N65DM2

Ficha técnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 50mOhm @ 30A, 10V 5V @ 250µA 120 nC @ 10 V ±25V 5500 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH20N60

IXFH20N60

MOSFET N-CH 600V 20A TO-247AD

IXYS
3,286 -

RFQ

IXFH20N60

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 350mOhm @ 10A, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10M25BVRG

APT10M25BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology
3,136 -

RFQ

APT10M25BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 25mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 5160 pF @ 25 V - - - Through Hole
IXTH360N055T2

IXTH360N055T2

MOSFET N-CH 55V 360A TO247

IXYS
3,822 -

RFQ

IXTH360N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 360A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 20000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT1003RSLLG

APT1003RSLLG

MOSFET N-CH 1000V 4A D3PAK

Microchip Technology
3,705 -

RFQ

APT1003RSLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) - 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V - 694 pF @ 25 V - - - Surface Mount
IXFT70N65X3HV

IXFT70N65X3HV

MOSFET 70A 650V X3 TO268HV

IXYS
3,056 -

RFQ

Tube HiPerFET™, Ultra X3 Active - - - - - - - - - - - - - -
NTC080N120SC1

NTC080N120SC1

SIC MOS WAFER SALES 80MOHM 1200V

onsemi
2,166 -

RFQ

NTC080N120SC1

Ficha técnica

Tray - Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1112 pF @ 800 V - 178W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTK170N10P

IXTK170N10P

MOSFET N-CH 100V 170A TO264

IXYS
3,661 -

RFQ

IXTK170N10P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 250µA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW75N60M6

STW75N60M6

MOSFET N-CH 600V 72A TO247

STMicroelectronics
3,806 -

RFQ

STW75N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) 10V 36mOhm @ 36A, 10V 4.75V @ 250µA 106 nC @ 10 V ±25V 4850 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFJ20N85X

IXFJ20N85X

MOSFET N-CH 850V 9.5A ISO TO247

IXYS
2,050 -

RFQ

IXFJ20N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 9.5A (Tc) 10V 360mOhm @ 10A, 10V 5.5V @ 2.5mA 63 nC @ 10 V ±30V 1660 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKC20N60C

IXKC20N60C

MOSFET N-CH 600V 15A ISOPLUS220

IXYS
2,829 -

RFQ

IXKC20N60C

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 190mOhm @ 16A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IXTF200N10T

IXTF200N10T

MOSFET N-CH 100V 90A I4PAC

IXYS
3,994 -

RFQ

IXTF200N10T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 7mOhm @ 50A, 10V 4.5V @ 250µA 152 nC @ 10 V ±30V 9400 pF @ 25 V - 156W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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