Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT5018SFLLG/TR

APT5018SFLLG/TR

MOSFET N-CH 500V 27A D3PAK

Microchip Technology
3,285 -

RFQ

APT5018SFLLG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) 10V 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V ±30V 2596 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5016BLLG

APT5016BLLG

MOSFET N-CH 500V 30A TO247

Microchip Technology
3,253 -

RFQ

APT5016BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 160mOhm @ 15A, 10V 5V @ 1mA 72 nC @ 10 V ±30V 2833 pF @ 25 V - 329W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT42F50S

APT42F50S

MOSFET N-CH 500V 42A D3PAK

Microchip Technology
2,411 -

RFQ

APT42F50S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 42A (Tc) 10V 130mOhm @ 21A, 10V 5V @ 1mA 170 nC @ 10 V ±30V 6810 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT80N65X2HV-TRL

IXFT80N65X2HV-TRL

MOSFET N-CH 650V 80A TO268HV

IXYS
2,295 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 38mOhm @ 40A, 10V 5V @ 4mA 140 nC @ 10 V ±30V 8300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5020SVFRG/TR

APT5020SVFRG/TR

MOSFET N-CH 500V 26A D3PAK

Microchip Technology
2,241 -

RFQ

APT5020SVFRG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 200mOhm @ 13A, 10V 4V @ 1mA 225 nC @ 10 V ±30V 4440 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT40N85XHV

IXFT40N85XHV

MOSFET N-CH 850V 40A TO268

IXYS
2,322 -

RFQ

IXFT40N85XHV

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 40A (Tc) 10V 145mOhm @ 500mA, 10V 5.5V @ 4mA 98 nC @ 10 V ±30V 3700 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5018SLLG

APT5018SLLG

MOSFET N-CH 500V 27A D3PAK

Microchip Technology
2,885 -

RFQ

APT5018SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) - 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V - 2596 pF @ 25 V - - - Surface Mount
IXFR24N80P

IXFR24N80P

MOSFET N-CH 800V 13A ISOPLUS247

IXYS
3,458 -

RFQ

IXFR24N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 420mOhm @ 12A, 10V 5V @ 4mA 105 nC @ 10 V ±30V 7200 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT56M50B2

APT56M50B2

MOSFET N-CH 500V 56A T-MAX

Microchip Technology
2,635 -

RFQ

APT56M50B2

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6038SLLG

APT6038SLLG

MOSFET N-CH 600V 17A D3PAK

Microchip Technology
2,800 -

RFQ

APT6038SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) - 380mOhm @ 8.5A, 10V 5V @ 1mA 43 nC @ 10 V - 1850 pF @ 25 V - - - Surface Mount
STP57N65M5

STP57N65M5

MOSFET N-CH 650V 42A TO220

STMicroelectronics
3,063 -

RFQ

STP57N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
STP34NM60ND

STP34NM60ND

MOSFET N-CH 600V 29A TO220

STMicroelectronics
2,098 -

RFQ

STP34NM60ND

Ficha técnica

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 80.4 nC @ 10 V ±25V 2785 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
IXFT50N50P3

IXFT50N50P3

MOSFET N-CH 500V 50A TO268

IXYS
2,087 -

RFQ

IXFT50N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 120mOhm @ 25A, 10V 5V @ 4mA 85 nC @ 0 V ±30V 4335 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFPS37N50APBF

IRFPS37N50APBF

MOSFET N-CH 500V 36A SUPER247

Infineon Technologies
2,142 -

RFQ

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS43N50KPBF

IRFPS43N50KPBF

MOSFET N-CH 500V 47A SUPER247

Vishay Siliconix
3,924 -

RFQ

IRFPS43N50KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 90mOhm @ 28A, 10V 5V @ 250µA 350 nC @ 10 V ±30V 8310 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5018SFLLG

APT5018SFLLG

MOSFET N-CH 500V 27A D3PAK

Microchip Technology
2,449 -

RFQ

APT5018SFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) - 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V - 2596 pF @ 25 V - - - Surface Mount
NDCTR40120A

NDCTR40120A

MOSFET N-CH 1200V 40A SMD

onsemi
3,819 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
APT1003RSFLLG/TR

APT1003RSFLLG/TR

MOSFET N-CH 1KV 4A D3PAK

Microchip Technology
3,749 -

RFQ

APT1003RSFLLG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 694 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
LSIC1MO120G0120

LSIC1MO120G0120

MOSFET SIC 1200V 18A TO247-4L

Littelfuse Inc.
3,288 -

RFQ

LSIC1MO120G0120

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 27A (Tc) 20V 150mOhm @ 14A, 20V 4V @ 7mA 63 nC @ 20 V +22V, -6V 113 pF @ 800 V - 156W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT60N50P3

IXFT60N50P3

MOSFET N-CH 500V 60A TO268

IXYS
3,191 -

RFQ

IXFT60N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 5V @ 4mA 96 nC @ 10 V ±30V 6250 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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