Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH50N50P3

IXFH50N50P3

MOSFET N-CH 500V 50A TO247AD

IXYS
2,091 -

RFQ

IXFH50N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 120mOhm @ 25A, 10V 5V @ 4mA 85 nC @ 10 V ±30V 4335 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH440N055T2

IXTH440N055T2

MOSFET N-CH 55V 440A TO247

IXYS
2,884 -

RFQ

IXTH440N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 440A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 250µA 405 nC @ 10 V ±20V 25000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVMYS1D7N04CT1G

NVMYS1D7N04CT1G

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi
2,145 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V 4V @ 210µA 50 nC @ 10 V ±20V 3125 pF @ 25 V - 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS1D6N04CLT1G

NVMYS1D6N04CLT1G

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi
2,075 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 3V @ 210µA 71 nC @ 10 V ±20V 4301 pF @ 25 V - 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT5020SVFRG

APT5020SVFRG

MOSFET N-CH 500V 26A D3PAK

Microchip Technology
3,939 -

RFQ

APT5020SVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) - 200mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 4440 pF @ 25 V - - - Surface Mount
APT13F120S

APT13F120S

MOSFET N-CH 1200V 14A D3PAK

Microchip Technology
3,469 -

RFQ

APT13F120S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.2Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX32N80P

IXFX32N80P

MOSFET N-CH 800V 32A PLUS247-3

IXYS
3,527 -

RFQ

IXFX32N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT24M80S

APT24M80S

MOSFET N-CH 800V 25A D3PAK

Microchip Technology
3,230 -

RFQ

APT24M80S

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 390mOhm @ 12A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4595 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT1204R7SFLLG

APT1204R7SFLLG

MOSFET N-CH 1200V 3.5A D3PAK

Microchip Technology
3,566 -

RFQ

APT1204R7SFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 3.5A (Tc) - 4.7Ohm @ 1.75A, 10V 5V @ 1mA 31 nC @ 10 V - 715 pF @ 25 V - - - Surface Mount
APT20M45SVRG

APT20M45SVRG

MOSFET N-CH 200V 56A D3PAK

Microchip Technology
2,143 -

RFQ

APT20M45SVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) - 45mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V - 4860 pF @ 25 V - - - Surface Mount
IXFT30N50P

IXFT30N50P

MOSFET N-CH 500V 30A TO268

IXYS
2,017 -

RFQ

IXFT30N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 5V @ 4mA 70 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTR16P60P

IXTR16P60P

MOSFET P-CH 600V 10A ISOPLUS247

IXYS
3,656 -

RFQ

IXTR16P60P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 790mOhm @ 8A, 10V 4.5V @ 250µA 92 nC @ 10 V ±20V 5120 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR20P50P

IXTR20P50P

MOSFET P-CH 500V 13A ISOPLUS247

IXYS
2,229 -

RFQ

IXTR20P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 490mOhm @ 10A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 5120 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX220N17T2

IXFX220N17T2

MOSFET N-CH 170V 220A PLUS247-3

IXYS
2,175 -

RFQ

IXFX220N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 220A (Tc) 10V 6.3mOhm @ 60A, 10V 5V @ 8mA 500 nC @ 10 V ±20V 31000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT1003RSFLLG

APT1003RSFLLG

MOSFET N-CH 1000V 4A D3PAK

Microchip Technology
2,190 -

RFQ

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) - 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V - 694 pF @ 25 V - - - Surface Mount
IXFT60N65X2HV

IXFT60N65X2HV

MOSFET N-CH 650V 60A TO268HV

IXYS
2,217 -

RFQ

IXFT60N65X2HV

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 52mOhm @ 30A, 10V 5V @ 4mA 108 nC @ 10 V ±30V 6300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT10M19BVRG

APT10M19BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology
2,426 -

RFQ

APT10M19BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - Through Hole
IXFT24N90P-TRL

IXFT24N90P-TRL

MOSFET N-CH 900V 24A TO268

IXYS
3,557 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 420mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFR36N50P

IXFR36N50P

MOSFET N-CH 500V 19A ISOPLUS247

IXYS
3,980 -

RFQ

IXFR36N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH120N25T

IXFH120N25T

MOSFET N-CH 250V 120A TO247AD

IXYS
2,508 -

RFQ

IXFH120N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 23mOhm @ 60A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 11300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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