Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT43M60B2

APT43M60B2

MOSFET N-CH 600V 45A T-MAX

Microchip Technology
2,196 -

RFQ

APT43M60B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 45A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 8590 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH30N50Q3

IXFH30N50Q3

MOSFET N-CH 500V 30A TO247AD

IXYS
3,152 -

RFQ

IXFH30N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 6.5V @ 4mA 62 nC @ 10 V ±20V 3200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT500N04T2

IXTT500N04T2

MOSFET N-CH 40V 500A TO268

IXYS
3,171 -

RFQ

IXTT500N04T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 500A (Tc) 10V 1.6mOhm @ 100A, 10V 3.5V @ 250µA 405 nC @ 10 V ±20V 25000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH60N60X

IXFH60N60X

MOSFET N-CH 600V 60A TO247

IXYS
2,401 -

RFQ

IXFH60N60X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 55mOhm @ 30A, 10V 4.5V @ 8mA 143 nC @ 10 V ±30V 5800 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX660N04T4

IXTX660N04T4

DISC MSFT NCHTRENCHGATE-GEN4 TO-

IXYS
2,491 -

RFQ

Tube Trench Active - - - - - - - - - - - - - Through Hole
IXFH67N10

IXFH67N10

MOSFET N-CH 100V 67A TO-247AD

IXYS
3,254 -

RFQ

IXFH67N10

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 25mOhm @ 33.5A, 10V 4V @ 4mA 260 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX48N60P

IXFX48N60P

MOSFET N-CH 600V 48A PLUS247-3

IXYS
2,793 -

RFQ

IXFX48N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 135mOhm @ 500mA, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ60N60X

IXFQ60N60X

MOSFET N-CH 600V 60A TO3P

IXYS
2,207 -

RFQ

IXFQ60N60X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 55mOhm @ 30A, 10V 4.5V @ 8mA 143 nC @ 10 V ±30V 5800 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M38SVRG/TR

APT20M38SVRG/TR

MOSFET N-CH 200V 67A D3PAK

Microchip Technology
2,654 -

RFQ

APT20M38SVRG/TR

Ficha técnica

Tape & Reel (TR) POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 67A (Tc) 10V 38mOhm @ 33.5A, 10V 4V @ 1mA 225 nC @ 10 V ±30V 6120 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5015BVRG

APT5015BVRG

MOSFET N-CH 500V 32A TO247

Microchip Technology
2,648 -

RFQ

APT5015BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - Through Hole
APT43F60L

APT43F60L

MOSFET N-CH 600V 45A TO264

Microchip Technology
3,279 -

RFQ

APT43F60L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 45A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 8590 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP30N25L2

IXTP30N25L2

MOSFET N-CH 250V 30A TO220AB

IXYS
2,450 -

RFQ

IXTP30N25L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 140mOhm @ 15A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 3200 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT31M100B2

APT31M100B2

MOSFET N-CH 1000V 32A T-MAX

Microchip Technology
2,414 -

RFQ

APT31M100B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 380mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT10N100D2

IXTT10N100D2

MOSFET N-CH 1000V 10A TO268

IXYS
2,722 -

RFQ

IXTT10N100D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.5Ohm @ 5A, 10V - 200 nC @ 5 V ±20V 5320 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT8065BVRG

APT8065BVRG

MOSFET N-CH 800V 13A TO247

Microchip Technology
2,366 -

RFQ

APT8065BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) - 650mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3700 pF @ 25 V - - - Through Hole
APT5017BVFRG

APT5017BVFRG

MOSFET N-CH 500V 30A TO247

Microchip Technology
3,663 -

RFQ

APT5017BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) - 170mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - Through Hole
APT34M60S/TR

APT34M60S/TR

MOSFET N-CH 600V 36A D3PAK

Microchip Technology
3,218 -

RFQ

APT34M60S/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT56F50L

APT56F50L

MOSFET N-CH 500V 56A TO264

Microchip Technology
3,100 -

RFQ

APT56F50L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA64N10L2

IXTA64N10L2

MOSFET N-CH 100V 64A TO263AA

IXYS
3,847 -

RFQ

IXTA64N10L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 64A (Tc) 10V 32mOhm @ 500mA, 10V 4.5V @ 250µA 100 nC @ 10 V ±30V 3620 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA80N075L2

IXTA80N075L2

MOSFET N-CH 75V 80A TO263AA

IXYS
3,936 -

RFQ

IXTA80N075L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 24mOhm @ 40A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 3600 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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