Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJQ4408P_R2_00001

PJQ4408P_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,988 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 42A (Tc) 4.5V, 10V 9mOhm @ 16A, 10V 2.5V @ 250µA 7.1 nC @ 4.5 V ±20V 763 pF @ 25 V - 2W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G10P03

G10P03

P30V,RD(MAX)<[email protected],RD(MAX)<3

Goford Semiconductor
4,950 -

RFQ

G10P03

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 10A - - 1.5V @ 250µA 27 nC @ 4.5 V ±12V 1550 pF @ 15 V - 20W -55°C ~ 150°C (TJ) Surface Mount
PJQ2407_R1_00001

PJQ2407_R1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,975 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 8.4A (Ta) 4.5V, 10V 20mOhm @ 8.4A, 10V 2.5V @ 250µA 11 nC @ 4.5 V ±20V 1169 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD50R500CE

IPD50R500CE

IPD50R500 - 500V COOLMOS N-CHANN

Infineon Technologies
136,541 -

RFQ

IPD50R500CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PHP20N06T,127

PHP20N06T,127

NEXPERIA PHP20N06T - 20.3A, 55V

NXP Semiconductors
15,885 -

RFQ

PHP20N06T,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA 11 nC @ 10 V ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ)
FDMA8878-F130

FDMA8878-F130

30V SINGLE N-CHANNEL POWER TRENC

onsemi
1,337,705 -

RFQ

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 10A (Tc) 4.5V, 10V 16mOhm @ 9A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 720 pF @ 15 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ2409_R1_00001

PJQ2409_R1_00001

DFN2020B-6L, MOSFET

Panjit International Inc.
2,942 -

RFQ

PJQ2409_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 30mOhm @ 4A, 10V 2.5V @ 250µA 7.8 nC @ 4.5 V ±20V 870 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ2416_R1_00001

PJQ2416_R1_00001

DFN2020B-6L, MOSFET

Panjit International Inc.
1,846 -

RFQ

PJQ2416_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 11A (Ta) 1.8V, 4.5V 11mOhm @ 9.5A, 4.5V 1V @ 250µA 16 nC @ 4.5 V ±10V 1177 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF3N25

FQPF3N25

MOSFET N-CH 250V 2.3A TO220F

Fairchild Semiconductor
204,848 -

RFQ

FQPF3N25

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 2.2Ohm @ 1.15A, 10V 5V @ 250µA 5.2 nC @ 10 V ±30V 170 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJQ2463A_R1_00001

PJQ2463A_R1_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,990 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 105mOhm @ 3A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 785 pF @ 30 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJL9411_R2_00001

PJL9411_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,497 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 8.4A (Ta) 4.5V, 10V 20mOhm @ 8.4A, 10V 2.5V @ 250µA 11 nC @ 4.5 V ±20V 1169 pF @ 15 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD8880-SN00319

FDD8880-SN00319

FDD8880 - 35A, 30V, N-CHANNEL PO

onsemi
89,025 -

RFQ

FDD8880-SN00319

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS244ZE3062ANTMA1

BTS244ZE3062ANTMA1

BTS244 - TEMPFET, AUTOMOTIVE LOW

Infineon Technologies
24,500 -

RFQ

BTS244ZE3062ANTMA1

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V - 170W (Tc) -40°C ~ 175°C (TJ) Surface Mount
FDS6676AS-G

FDS6676AS-G

30V N-CHANNEL POWERTRENCH SYNCFE

onsemi
22,500 -

RFQ

Tape & Reel (TR) PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 6mOhm @ 14.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2510 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ356(0)-T1-AY

2SJ356(0)-T1-AY

2SJ356 - SIGNAL DEVICE

Renesas Electronics America Inc
16,000 -

RFQ

2SJ356(0)-T1-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
G100N03D5

G100N03D5

N-CH, 30V, 100A, RD(MAX)<3.5M@10

Goford Semiconductor
5,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 5595 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7421D1TRPBF

IRF7421D1TRPBF

MOSFET N-CH 30V 5.8A 8SO

Infineon Technologies
2,691 -

RFQ

IRF7421D1TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 35mOhm @ 4.1A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 510 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6294

FDS6294

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
28,057 -

RFQ

FDS6294

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11.3mOhm @ 13A, 10V 3V @ 250µA 14 nC @ 5 V ±20V 1205 pF @ 15 V - 3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
PHP29N08T,127

PHP29N08T,127

NEXPERIA PHP29N08T - 27A, 75V, 0

NXP Semiconductors
27,922 -

RFQ

PHP29N08T,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 27A (Tc) 11V 50mOhm @ 14A, 11V 5V @ 2mA 19 nC @ 10 V ±30V 810 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
PJQ4408P-AU_R2_000A1

PJQ4408P-AU_R2_000A1

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,970 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 42A (Tc) 4.5V, 10V 9mOhm @ 16A, 10V 2.5V @ 250µA 7.1 nC @ 4.5 V ±20V 763 pF @ 25 V - 2W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário