Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMN53D0LT-7

DMN53D0LT-7

DIODE

Diodes Incorporated
2,202 -

RFQ

DMN53D0LT-7

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 350mA (Ta) 2.5V, 10V 1.6Ohm @ 500mA, 10V 1.5V @ 250µA 0.6 nC @ 4.5 V ±20V 46 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2004TK

DMP2004TK

DIODE

Diodes Incorporated
3,327 -

RFQ

DMP2004TK

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 430mA (Ta) 1.8V, 4.5V 1.1Ohm @ 430mA, 4.5V 1V @ 250µA 0.97 nC @ 8 V ±8V 47 pF @ 16 V - 230mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MSC025SMA330B4

MSC025SMA330B4

MOSFET SIC 3300 V 25 MOHM TO-247

Microchip Technology
2,028 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 3300 V 104A (Tc) 20V 31mOhm @ 40A, 20V 2.7V @ 7mA 410 nC @ 20 V +23V, -10V 8720 pF @ 2640 V - - -55°C ~ 150°C (TJ) Through Hole
IPD050N10NF2SATMA1

IPD050N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
2,159 -

RFQ

Tape & Reel (TR) * Discontinued at Mosen - - - - - - - - - - - - - -
IAUA200N04S5N010ATMA1

IAUA200N04S5N010ATMA1

MOSFET_(20V 40V)

Infineon Technologies
2,713 -

RFQ

IAUA200N04S5N010ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™-5 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 7V, 10V 1mOhm @ 100A, 10V 3.4V @ 100µA 132 nC @ 10 V ±20V 7650 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD126N10NF2SATMA1

IPD126N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,086 -

RFQ

IPD126N10NF2SATMA1

Ficha técnica

Tape & Reel (TR) * Discontinued at Mosen - - - - - - - - - - - - - -
AUIRFU8403-701TRL

AUIRFU8403-701TRL

MOSFET

Infineon Technologies
3,290 -

RFQ

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFB8405-071

AUIRFB8405-071

MOSFET

Infineon Technologies
3,195 -

RFQ

Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP16NF96L

STP16NF96L

MOSFET N-CH

STMicroelectronics
2,102 -

RFQ

Tube * Active - - - - - - - - - - - - - -
FQU12N20TU-T

FQU12N20TU-T

IC

onsemi
2,926 -

RFQ

Bulk - Last Time Buy - - - - - - - - - - - - - -
FDPF18N50T-G

FDPF18N50T-G

IC

onsemi
2,325 -

RFQ

Bulk - Last Time Buy - - - - - - - - - - - - - -
NTHL120N60S5Z

NTHL120N60S5Z

MOSFET N-CH 600V 22A TO3PN

onsemi
2,846 -

RFQ

NTHL120N60S5Z

Ficha técnica

Tube SuperFET® V Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tj) 10V 120mOhm @ 11.5A, 10V 4V @ 2.2mA 40 nC @ 10 V ±20V 2088 pF @ 400 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLC3615F

IRLC3615F

MOSFET

Infineon Technologies
3,255 -

RFQ

Bulk * Last Time Buy - - - - - - - - - - - - - -
IRFU024NPBFAKLA1

IRFU024NPBFAKLA1

MOSFET N-CH

Infineon Technologies
3,738 -

RFQ

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU2405PBFAKLA1

IRFU2405PBFAKLA1

MOSFET N-CH

Infineon Technologies
2,925 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IRFB5615PBFXKMA1

IRFB5615PBFXKMA1

MOSFET N-CH

Infineon Technologies
3,409 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMT800100DC-22897

FDMT800100DC-22897

FET 100V 2.95 MOHM PQFN88

onsemi
2,271 -

RFQ

FDMT800100DC-22897

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 24A (Ta), 162A (Tc) 6V, 10V 2.95mOhm @ 24A, 10V 4V @ 250µA 111 nC @ 10 V ±20V 7835 pF @ 50 V - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP270N8F7W

STP270N8F7W

MOSFET N CH 80V 180A TO-220AB

STMicroelectronics
3,128 -

RFQ

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.5mOhm @ 90A, 10V 4V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) Through Hole
DMN61D9UT-13

DMN61D9UT-13

2N7002 FAMILY SOT523 T&R 10K

Diodes Incorporated
2,829 -

RFQ

DMN61D9UT-13

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 1.8V, 5V 2Ohm @ 50mA, 5V 1V @ 250µA 0.4 nC @ 4.5 V ±20V 28.5 pF @ 30 V - 260mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMTH4001SPSQ-13

DMTH4001SPSQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated
2,759 -

RFQ

DMTH4001SPSQ-13

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 225A (Tc) 10V 1mOhm @ 30A, 10V 4V @ 250µA 144 nC @ 10 V ±20V 10787 pF @ 20 V - 3.1W (Ta), 187.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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