Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR2905ZTRL

AUIRFR2905ZTRL

MOSFET N-CH 55V 42A DPAK

International Rectifier
4,798 -

RFQ

AUIRFR2905ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFU8405

AUIRFU8405

MOSFET N-CH 40V 100A I-PAK

International Rectifier
3,511 -

RFQ

AUIRFU8405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.98mOhm @ 90A, 10V 3.9V @ 100µA 155 nC @ 10 V ±20V 5171 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI072N10N3G

IPI072N10N3G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
11,000 -

RFQ

IPI072N10N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PJL9414_R2_00001

PJL9414_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,482 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 6mOhm @ 10A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1323 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS8570S

FDMS8570S

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
81,000 -

RFQ

FDMS8570S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 60A (Tc) 4.5V, 10V 2.8mOhm @ 24A, 10V 2.2V @ 1mA 425 nC @ 10 V ±12V 2825 pF @ 13 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G65P06D5

G65P06D5

P60V,RD(MAX)<18M@-10V,VTH-2V~-3V

Goford Semiconductor
14,815 -

RFQ

G65P06D5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 5814 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJA3412_R1_00001

PJA3412_R1_00001

SOT-23, MOSFET

Panjit International Inc.
3,379 -

RFQ

PJA3412_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 1.8V, 4.5V 56mOhm @ 4.1A, 4.5V 1.2V @ 250µA 4.6 nC @ 4.5 V ±12V 350 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ5466A1_R2_00001

PJQ5466A1_R2_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,990 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.4A (Ta), 48A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V 2.5V @ 250µA 13.5 nC @ 4.5 V ±20V 1574 pF @ 25 V - 2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD9P06A-AU_L2_000A1

PJD9P06A-AU_L2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,728 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta), 7A (Tc) 4.5V, 10V 170mOhm @ 3.5A, 10V 2.5V @ 250µA 8.3 nC @ 10 V ±20V 430 pF @ 30 V - 2W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFC8407TR

AUIRFC8407TR

AUIRFC8407 - 30V-250V N-CHANNEL

International Rectifier
306,276 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
IRF6665TRPBF

IRF6665TRPBF

IRF6665 - 12V-300V N-CHANNEL POW

International Rectifier
88,562 -

RFQ

IRF6665TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V 5V @ 250µA 13 nC @ 10 V ±20V 530 pF @ 25 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BUK7509-55A,127

BUK7509-55A,127

NEXPERIA BUK7509-55A - 75A, 55V

Nexperia USA Inc.
20,000 -

RFQ

BUK7509-55A,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 0 V ±20V 3271 pF @ 25 V - 211W (Tc) -55°C ~ 175°C (TJ)
FDD6680AS

FDD6680AS

MOSFET N-CH 30V 55A TO252

Fairchild Semiconductor
10,485 -

RFQ

FDD6680AS

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V 3V @ 1mA 29 nC @ 10 V ±20V 1200 pF @ 15 V - 60W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK7509-55A,127

BUK7509-55A,127

NEXPERIA BUK7509-55A - 75A, 55V

NXP Semiconductors
3,370 -

RFQ

BUK7509-55A,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 0 V ±20V 3271 pF @ 25 V - 211W (Tc) -55°C ~ 175°C (TJ)
G65P06K

G65P06K

P60V,RD(MAX)<18M@-10V,VTH-2V~-3.

Goford Semiconductor
6,649 -

RFQ

G65P06K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 5814 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MCAC50N06Y-TP

MCAC50N06Y-TP

MCAC50N06Y-TP

Micro Commercial Co
3,488 -

RFQ

MCAC50N06Y-TP

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A 4.5V, 10V 8.2mOhm @ 20A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 1409 pF @ 30 V - 78W -55°C ~ 150°C (TJ) Surface Mount
MCG18P02A-TP

MCG18P02A-TP

MCG18P02A-TP

Micro Commercial Co
2,362 -

RFQ

MCG18P02A-TP

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 18A 1.8V, 4.5V 8.5mOhm @ 4.2A, 4.5V 900mV @ 250µA 29 nC @ 10 V ±8V 1255 pF @ 10 V - 52W -55°C ~ 150°C (TJ) Surface Mount
MCAC60N150Y-TP

MCAC60N150Y-TP

MCAC60N150Y-TP

Micro Commercial Co
3,348 -

RFQ

MCAC60N150Y-TP

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) 10V 19mOhm @ 20A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 2275 pF @ 75 V - 125W -55°C ~ 150°C (TJ) Surface Mount
MCMG69-TP

MCMG69-TP

MCMG69-TP

Micro Commercial Co
3,652 -

RFQ

MCMG69-TP

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 16A 2.5V, 4.5V 21mOhm @ 6A, 4.5V 1V @ 250µA 48 nC @ 4.5 V ±8V 2700 pF @ 10 V - 18W -55°C ~ 150°C (TJ) Surface Mount
MCAC10H04Y-TP

MCAC10H04Y-TP

MCAC10H04Y-TP

Micro Commercial Co
2,217 -

RFQ

MCAC10H04Y-TP

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.8mOhm @ 20A, 10V 2V @ 250µA 86 nC @ 10 V ±20V 5059 pF @ 20 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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