Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSO051N03MS G

BSO051N03MS G

MOSFET N-CH 30V 14A 8DSO

Infineon Technologies
2,178 -

RFQ

BSO051N03MS G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 5.1mOhm @ 18A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RQA0008RXDQS#H1

RQA0008RXDQS#H1

RQA0008 - N-CHANNEL POWER MOSFET

Renesas
40,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 16 V 2.4A (Ta) - - 800mV @ 1mA - ±5V 44 pF @ 0 V - 10W (Tc) 150°C Surface Mount
G45P02D3

G45P02D3

P20V,RD(MAX)<[email protected],RD(MAX)<

Goford Semiconductor
4,908 -

RFQ

G45P02D3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 45A - 9.5mOhm @ 10A, 4.5V 1V @ 250µA 55 nC @ 4.5 V ±12V 3500 pF @ 10 V - 80W -55°C ~ 150°C (TJ) Surface Mount
PJD35N06A_L2_00001

PJD35N06A_L2_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,830 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 4.7A (Ta), 35A (Tc) 4.5V, 10V 21mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 20 V - 1.1W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJL9436A_R2_00001

PJL9436A_R2_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,490 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.5A (Ta) 4.5V, 10V 21mOhm @ 7.5A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7326D2TRPBF

IRF7326D2TRPBF

MOSFET P-CH 30V 3.6A 8SO

Infineon Technologies
2,125 -

RFQ

IRF7326D2TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 1V @ 250µA 25 nC @ 10 V ±20V 440 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ4402P_R2_00001

PJQ4402P_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,991 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 70A (Tc) 4.5V, 10V 3.8mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2436 pF @ 25 V - 2W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD14P06A-AU_L2_000A1

PJD14P06A-AU_L2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,990 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta), 14A (Tc) 4.5V, 10V 110mOhm @ 6A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 785 pF @ 30 V - 2W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G15N10C

G15N10C

N100V,RD(MAX)<110M@10V,RD(MAX)<1

Goford Semiconductor
2,473 -

RFQ

G15N10C

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 110mOhm @ 8A, 10V 3V @ 250µA 22 nC @ 10 V ±20V - - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G23N06K

G23N06K

N60V,RD(MAX)<35M@10V,RD(MAX)<45M

Goford Semiconductor
2,396 -

RFQ

G23N06K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 23A - 35mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 590 pF @ 15 V - 38W -55°C ~ 150°C (TJ) Surface Mount
G15P04K

G15P04K

P40V,RD(MAX)<39M@-10V,RD(MAX)<70

Goford Semiconductor
2,108 -

RFQ

G15P04K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 15A - 39mOhm @ 10A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 930 pF @ 20 V - 50W -55°C ~ 150°C (TJ) Surface Mount
PJL9415_R2_00001

PJL9415_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,470 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 9.5mOhm @ 12A, 10V 2.5V @ 250µA 26 nC @ 4.5 V ±20V 3168 pF @ 15 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN8R5-100ESQ

PSMN8R5-100ESQ

NEXPERIA PSMN8R5-100ESQ - 100A

Nexperia USA Inc.
36,808 -

RFQ

PSMN8R5-100ESQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ)
BSR315PH6327XTSA1

BSR315PH6327XTSA1

MOSFET P-CH 60V 620MA SC59

Infineon Technologies
5,000 -

RFQ

BSR315PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 620mA (Ta) 4.5V, 10V 800mOhm @ 620mA, 10V 2V @ 160µA 6 nC @ 10 V ±20V 176 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ5458A-AU_R2_000A1

PJQ5458A-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
1,193 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 4.4A (Ta), 16A (Tc) 4.5V, 10V 50mOhm @ 8A, 10A 2.5V @ 250µA 14 nC @ 10 V ±20V 815 pF @ 15 V - 2.4W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSO083N03MSGXUMA1

BSO083N03MSGXUMA1

MOSFET N-CH 30V 11A 8DSO

Infineon Technologies
2,232 -

RFQ

BSO083N03MSGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 8.3mOhm @ 14A, 10V 2V @ 250µA 27 nC @ 10 V ±20V 2100 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SK4150TZ-E

2SK4150TZ-E

2SK4150TZ - N-CHANNEL POWER MOSF

Renesas
19,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 400mA (Ta) 2.5V, 4V 5.7Ohm @ 200mA, 4V 1.5V @ 1mA 3.7 nC @ 4 V ±10V 80 pF @ 25 V - 750mW (Ta) 150°C Through Hole
PJQ4401P_R2_00001

PJQ4401P_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,975 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 50A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 3228 pF @ 15 V - 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJQ4443P_R2_00001

PJQ4443P_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,600 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 8.8A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2.1W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF530A

IRF530A

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
1,966 -

RFQ

IRF530A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 110mOhm @ 7A, 10V 4V @ 250µA 36 nC @ 10 V - 790 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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