Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PJD25N10A_L2_00001

PJD25N10A_L2_00001

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
2,995 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.4A (Ta), 25A (Tc) 4.5V, 10V 50mOhm @ 15A, 10V 2.5V @ 250µA 61 nC @ 10 V ±20V 3601 pF @ 15 V - 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD40N04-AU_L2_000A1

PJD40N04-AU_L2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,986 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta), 40A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 1040 pF @ 20 V - 2.4W (Ta), 43.2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJQ5466A-AU_R2_000A1

PJQ5466A-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,992 -

RFQ

PJQ5466A-AU_R2_000A1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 6.5A (Ta), 40A (Tc) 4.5V, 10V 21mOhm @ 15A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 20 V - 2.4W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJQ4464AP-AU_R2_000A1

PJQ4464AP-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,400 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.3A (Ta), 33A (Tc) 4.5V, 10V 17mOhm @ 16A, 10V 2.5V @ 250µA 13.5 nC @ 4.5 V ±20V 1574 pF @ 25 V - 2.4W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7680

FDMC7680

MOSFET N-CH 30V 14.8A 8MLP

Fairchild Semiconductor
11,422 -

RFQ

FDMC7680

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 14.8A (Ta) 4.5V, 10V 7.2mOhm @ 14.8A, 10V 3V @ 250µA 42 nC @ 10 V ±20V 2855 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD25N06A-AU_L2_000A1

PJD25N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,940 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 5.5A (Ta), 25A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 1173 pF @ 25 V - 2.4W (Ta), 48.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP048NPBF

IRFP048NPBF

IRFP048 - 12V-300V N-CHANNEL POW

Infineon Technologies
39,585 -

RFQ

IRFP048NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 16mOhm @ 37A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
630A

630A

N200V,RD(MAX)<280M@10V,VTH1V~3V

Goford Semiconductor
2,483 -

RFQ

630A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 11A 10V 280mOhm @ 4.5A, 10V 3V @ 250µA 11.8 nC @ 10 V ±20V 509 pF @ 25 V - 83W -55°C ~ 150°C (TJ)
FDPF680N10T

FDPF680N10T

MOSFET N-CH 100V 12A TO220F

Fairchild Semiconductor
54,897 -

RFQ

FDPF680N10T

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 68mOhm @ 6A, 10V 4.5V @ 250µA 17 nC @ 10 V ±20V 1000 pF @ 50 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR9024N

AUIRFR9024N

AUIRFR9024 - 20V-150V P-CHANNEL

Infineon Technologies
32,165 -

RFQ

AUIRFR9024N

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK4178-ZK-E1-AY

2SK4178-ZK-E1-AY

2SK4178 - SWITCHING N-CHANNEL PO

Renesas
27,500 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 48A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.5V @ 250µA 24 nC @ 10 V ±20V 1500 pF @ 10 V - 1W (Ta), 33W (Tc) 150°C Surface Mount
IRFL014NTRPBF

IRFL014NTRPBF

MOSFET N-CH 55V 1.9A SOT223

Infineon Technologies
1,245 -

RFQ

IRFL014NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 1.9A (Ta) 10V 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G20P08K

G20P08K

P-80V,RD(MAX)<62M@-10V,RD(MAX)<7

Goford Semiconductor
1,426 -

RFQ

G20P08K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 80 V 20A (Tc) 4.5V, 10V 62mOhm @ 10A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 3500 pF @ 30 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GT025N06D5

GT025N06D5

N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.

Goford Semiconductor
10,020 -

RFQ

GT025N06D5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 95A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.5V @ 250µA 93 nC @ 10 V ±20V 5950 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJQ4444P-AU_R2_000A1

PJQ4444P-AU_R2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
1,700 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 70A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 1258 pF @ 25 V - 2.4W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G20P10KE

G20P10KE

P-CH, -100V, 20A, RD(MAX)<116M@-

Goford Semiconductor
2,320 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 116mOhm @ 16A, 10V 3V @ 250µA 70 nC @ 10 V ±20V 3354 pF @ 50 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJZ6NA90_T0_10001

PJZ6NA90_T0_10001

MOSFET

Panjit International Inc.
2,855 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6A (Ta) 10V 2.3Ohm @ 3A, 10V 4V @ 250µA 23.6 nC @ 10 V ±30V 915 pF @ 25 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJU3NA80_T0_00001

PJU3NA80_T0_00001

MOSFET

Panjit International Inc.
2,705 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 4.8Ohm @ 1.5A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 406 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJZ18NA50_T0_10001

PJZ18NA50_T0_10001

MOSFET

Panjit International Inc.
2,957 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 350mOhm @ 9A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 2407 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJU4NA60_T0_00001

PJU4NA60_T0_00001

MOSFET

Panjit International Inc.
2,673 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 2.4Ohm @ 2A, 10V 4V @ 250µA 11.1 nC @ 10 V ±30V 450 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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