Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQNLNSOCTA

FQNLNSOCTA

MOSFET N-CH

onsemi
3,990 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
FQP50N06L-EPKE0003

FQP50N06L-EPKE0003

MOSFET N-CH 60V 65A TO220-3

onsemi
2,921 -

RFQ

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 52.4A (Tc) 5V, 10V 21mOhm @ 26.2A, 10V 2.5V @ 250µA 32 nC @ 5 V ±20V 1630 pF @ 25 V - 121W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD5C684NL

NTD5C684NL

MOSFET N-CH 60V 46A DPAK

onsemi
2,633 -

RFQ

NTD5C684NL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta), 27A (Tc) 4.5V, 10V 16.5mOhm @ 15A, 10V 2.1V @ 20µA 9.6 nC @ 10 V ±20V 700 pF @ 25 V - 3.6W (Ta), 25W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDC6N50NZFTM

FDC6N50NZFTM

FDC6N50NZFTM

onsemi
2,406 -

RFQ

Bulk - Last Time Buy - - - - - - - - - - - - - -
FDBL9406-F085HM

FDBL9406-F085HM

MOSFET

onsemi
2,129 -

RFQ

Bulk PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.2mOhm @ 80A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 7735 pF @ 25 V - 300W (Tj) -55°C ~ 175°C (TJ) Surface Mount
PMX2000ENZ

PMX2000ENZ

PMX2000ENZ

Nexperia USA Inc.
3,427 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
PMX3000ENEZ

PMX3000ENEZ

PMX3000ENEZ

Nexperia USA Inc.
2,750 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
PMX700ENZ

PMX700ENZ

PMX700ENZ

Nexperia USA Inc.
3,469 -

RFQ

PMX700ENZ

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 800mOhm @ 400mA, 10V 2.5V @ 250µA 1.1 nC @ 10 V ±20V 39 pF @ 30 V - 300mW (Ta), 4.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
KFJ4B01120L

KFJ4B01120L

MOSFET P-CH 12V

Nuvoton Technology Corporation
3,093 -

RFQ

KFJ4B01120L

Ficha técnica

Cut Tape (CT) * Active - - - - - - - - - - - - - -
PJU7NA60_T0_00001

PJU7NA60_T0_00001

MOSFET

Panjit International Inc.
3,058 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 15.2 nC @ 10 V ±30V 723 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJU4NA65_T0_00001

PJU4NA65_T0_00001

MOSFET

Panjit International Inc.
2,011 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 2.7Ohm @ 2A, 10V 4V @ 250µA 11.4 nC @ 10 V ±30V 463 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJU4NA70_T0_00001

PJU4NA70_T0_00001

MOSFET

Panjit International Inc.
2,879 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 4A (Ta) 10V 2.8Ohm @ 2A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 514 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJU2NA1K_T0_00001

PJU2NA1K_T0_00001

MOSFET

Panjit International Inc.
2,366 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 2A (Ta) 10V 9Ohm @ 1A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 385 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJU2NA70_T0_00001

PJU2NA70_T0_00001

MOSFET

Panjit International Inc.
3,191 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 2A (Ta) 10V 6.5Ohm @ 1A, 10V 4V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJQ2405_R1_00001

PJQ2405_R1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,420 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 7.2A (Ta) 1.8V, 4.5V 32mOhm @ 7.2A, 4.5V 900mV @ 250µA 18.9 nC @ 4.5 V ±8V 1785 pF @ 10 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G50N03K

G50N03K

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor
2,490 -

RFQ

G50N03K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 65A - 7mOhm @ 20A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 950 pF @ 15 V - 48W -55°C ~ 150°C (TJ) Surface Mount
PJL9413_R2_00001

PJL9413_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,360 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 15.5mOhm @ 10A, 10V 2.5V @ 250µA 14 nC @ 4.5 V ±20V 1556 pF @ 15 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G06N06S

G06N06S

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

Goford Semiconductor
2,146 -

RFQ

G06N06S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 8A - 22mOhm @ 6A, 10V 2.4V @ 250µA 46 nC @ 10 V ±20V 1600 pF @ 30 V - 2.1W -55°C ~ 150°C (TJ) Surface Mount
G110N06K

G110N06K

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Goford Semiconductor
4,159 -

RFQ

G110N06K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 6.4mOhm @ 4A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 5538 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G50N03J

G50N03J

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor
4,905 -

RFQ

G50N03J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1255 pF @ 15 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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