Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT20M34BLLG

APT20M34BLLG

MOSFET N-CH 200V 74A TO247

Microchip Technology
2,596 -

RFQ

APT20M34BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 200 V 74A (Tc) - 34mOhm @ 37A, 10V 5V @ 1mA 60 nC @ 10 V - 3660 pF @ 25 V - - - Through Hole
IXFX200N10P

IXFX200N10P

MOSFET N-CH 100V 200A PLUS247-3

IXYS
2,537 -

RFQ

IXFX200N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 7.5mOhm @ 100A, 10V 5V @ 8mA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT5014BFLLG

APT5014BFLLG

MOSFET N-CH 500V 35A TO247

Microchip Technology
2,900 -

RFQ

APT5014BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) - 140mOhm @ 17.5A, 10V 5V @ 1mA 72 nC @ 10 V - 3261 pF @ 25 V - - - Through Hole
IPZA60R024P7XKSA1

IPZA60R024P7XKSA1

MOSFET N-CH 600V 101A TO247-4-3

Infineon Technologies
2,889 -

RFQ

IPZA60R024P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 101A (Tc) 10V 24mOhm @ 42A, 10V 4V @ 2.03mA 164 nC @ 10 V ±20V 7144 pF @ 400 V - 291W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30M61SLLG/TR

APT30M61SLLG/TR

MOSFET N-CH 300V 54A D3PAK

Microchip Technology
3,742 -

RFQ

APT30M61SLLG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 54A (Tc) 10V 61mOhm @ 27A, 10V 5V @ 1mA 64 nC @ 10 V ±30V 3720 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT41M80L

APT41M80L

MOSFET N-CH 800V 43A TO264

Microchip Technology
2,045 -

RFQ

APT41M80L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 43A (Tc) 10V 210mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10M19SVFRG

APT10M19SVFRG

MOSFET N-CH 100V 75A D3PAK

Microchip Technology
2,998 -

RFQ

APT10M19SVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 37.5A, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - Surface Mount
APT6025BLLG

APT6025BLLG

MOSFET N-CH 600V 24A TO247

Microchip Technology
2,858 -

RFQ

APT6025BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) - 250mOhm @ 12A, 10V 5V @ 1mA 65 nC @ 10 V - 2910 pF @ 25 V - - - Through Hole
C3M0060065K

C3M0060065K

SICFET N-CH 650V 37A TO247-4L

Wolfspeed, Inc.
3,292 -

RFQ

C3M0060065K

Ficha técnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA 46 nC @ 15 V +15V, -4V 1020 pF @ 600 V - 150W (Tc) -40°C ~ 175°C (TJ) Through Hole
APT77N60SC6

APT77N60SC6

MOSFET N-CH 600V 77A D3PAK

Microchip Technology
3,889 -

RFQ

APT77N60SC6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260 nC @ 10 V ±20V 13600 pF @ 25 V Super Junction 481W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT70N20Q3

IXFT70N20Q3

MOSFET N-CH 200V 70A TO268

IXYS
3,414 -

RFQ

IXFT70N20Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 200 V 70A (Tc) 10V 40mOhm @ 35A, 10V 6.5V @ 4mA 67 nC @ 10 V ±20V 3150 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT50N30Q3

IXFT50N30Q3

MOSFET N-CH 300V 50A TO268

IXYS
3,570 -

RFQ

IXFT50N30Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 80mOhm @ 25A, 10V 6.5V @ 4mA 65 nC @ 10 V ±20V 3165 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT30N50Q3

IXFT30N50Q3

MOSFET N-CH 500V 30A TO268

IXYS
2,181 -

RFQ

IXFT30N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 6.5V @ 4mA 62 nC @ 10 V ±20V 3200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT400N075T2

IXFT400N075T2

MOSFET N-CH 75V 400A TO268

IXYS
2,193 -

RFQ

IXFT400N075T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 400A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 250µA 420 nC @ 10 V ±20V 24000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STW62N65M5

STW62N65M5

MOSFET N-CH 650V 46A TO247

STMicroelectronics
2,426 -

RFQ

STW62N65M5

Ficha técnica

Tube Automotive, AEC-Q101, MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 49mOhm @ 23A, 10V 5V @ 250µA 142 nC @ 10 V ±25V 6420 pF @ 100 V - 330W (Tc) 150°C (TJ) Through Hole
APT6025BFLLG

APT6025BFLLG

MOSFET N-CH 600V 24A TO247

Microchip Technology
3,547 -

RFQ

APT6025BFLLG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) - 250mOhm @ 12A, 10V 5V @ 1mA 65 nC @ 10 V - 2910 pF @ 25 V - - - Through Hole
NVH4L027N65S3F

NVH4L027N65S3F

SF3 FRFET AUTO 27MOHM TO-247-4L

onsemi
2,461 -

RFQ

NVH4L027N65S3F

Ficha técnica

Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 227 nC @ 10 V ±30V 7780 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8052BLLG

APT8052BLLG

MOSFET N-CH 800V 15A TO247

Microchip Technology
3,660 -

RFQ

APT8052BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) - 520mOhm @ 7.5A, 10V 5V @ 1mA 75 nC @ 10 V - 2035 pF @ 25 V - - - Through Hole
IXFT320N10T2-TRL

IXFT320N10T2-TRL

MOSFET N-CH 100V 320A TO268

IXYS
2,921 -

RFQ

Tape & Reel (TR) HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 250µA 430 nC @ 10 V ±20V 26000 pF @ 25 V - 1kW (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT84M50L

APT84M50L

MOSFET N-CH 500V 84A TO264

Microchip Technology
2,108 -

RFQ

APT84M50L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 84A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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