Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTT40N50L2-TRL

IXTT40N50L2-TRL

MOSFET N-CH 500V 40A TO268

IXYS
3,623 -

RFQ

Tape & Reel (TR) Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 170mOhm @ 20A, 10V 4.5V @ 250µA 320 nC @ 10 V ±20V 10400 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
S2M0080120D

S2M0080120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions
3,350 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF33N10

FQPF33N10

MOSFET N-CH 100V 18A TO220F

Fairchild Semiconductor
1,195 -

RFQ

FQPF33N10

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 52mOhm @ 9A, 10V 4V @ 250µA 51 nC @ 10 V ±25V 1500 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
ADP3415LRMZ-REEL

ADP3415LRMZ-REEL

ADP3415 - DUAL MOSFET DRIVER WIT

Analog Devices Inc.
96,259 -

RFQ

ADP3415LRMZ-REEL

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFU4292

AUIRFU4292

MOSFET_(120V,300V)

International Rectifier
26,098 -

RFQ

AUIRFU4292

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V 5V @ 50µA 20 nC @ 10 V ±20V 705 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50N04S408ATMA1

IPD50N04S408ATMA1

MOSFET N-CH 40V 50A TO252-3

Infineon Technologies
421 -

RFQ

IPD50N04S408ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.9mOhm @ 50A, 10V 4V @ 17µA 22.4 nC @ 10 V ±20V 1780 pF @ 6 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJD90N03_L2_00001

PJD90N03_L2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,995 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 90A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V 2.5V @ 250µA 35 nC @ 4.5 V ±20V 4305 pF @ 25 V - 2W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC019N03L5SATMA1

ISC019N03L5SATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
6,585 -

RFQ

ISC019N03L5SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 30A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF600N60Z

FCPF600N60Z

MOSFET N-CH 600V 7.4A TO220F

Fairchild Semiconductor
203,678 -

RFQ

FCPF600N60Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJD30N15_L2_00001

PJD30N15_L2_00001

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
2,990 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Ta), 25A (Tc) 6V, 10V 65mOhm @ 5A, 10V 4V @ 250µA 29.5 nC @ 10 V ±25V 1764 pF @ 30 V - 2W (Ta), 102W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF600N60Z

FCPF600N60Z

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
58,200 -

RFQ

FCPF600N60Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC100N04S6L025ATMA1

IAUC100N04S6L025ATMA1

IAUC100N04S6L025ATMA1

Infineon Technologies
1,410 -

RFQ

IAUC100N04S6L025ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.56mOhm @ 50A, 10V 2V @ 24µA 34 nC @ 10 V ±16V 2019 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2157C-T1-AZ

2SK2157C-T1-AZ

2SK2157C-T1-AZ - N-CHANNEL MOS F

Renesas
35,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 2.5V, 4.5V 63mOhm @ 2A, 4.5V 1.5V @ 1mA 4 nC @ 4 V ±12V 260 pF @ 10 V - 2W (Ta) 150°C Surface Mount
BSF024N03LT3GXUMA1

BSF024N03LT3GXUMA1

MOSFET N-CH 30V 15A/106A 2WDSON

Infineon Technologies
5,000 -

RFQ

BSF024N03LT3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 106A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V 2.2V @ 250µA 71 nC @ 10 V ±20V 5500 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD50R500CEAUMA1

IPD50R500CEAUMA1

MOSFET N-CH 550V 7.6A TO252

Infineon Technologies
1,344 -

RFQ

IPD50R500CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 550 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7403TRPBF

IRF7403TRPBF

MOSFET N-CH 30V 8.5A 8SO

Infineon Technologies
2,925 -

RFQ

IRF7403TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta) 4.5V, 10V 22mOhm @ 4A, 10V 1V @ 250µA 57 nC @ 10 V ±20V 1200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G86N06K

G86N06K

N60V,RD(MAX)<8.4M@10V,VTH2V~4V

Goford Semiconductor
2,454 -

RFQ

G86N06K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 68A - 8.4mOhm @ 4A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2860 pF @ 25 V - 88W -55°C ~ 175°C (TJ)
NDS8425

NDS8425

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
60,351 -

RFQ

NDS8425

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 7.4A (Ta) 2.7V, 4.5V 22mOhm @ 7.4A, 4.5V 1.5V @ 250µA 18 nC @ 4.5 V ±8V 1098 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC026N02KSG

BSC026N02KSG

BSC026N02 - 12V-300V N-CHANNEL P

Infineon Technologies
38,580 -

RFQ

BSC026N02KSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPDH4N03LAG

IPDH4N03LAG

MOSFET N-CH 25V 90A TO252-3

Infineon Technologies
2,390 -

RFQ

IPDH4N03LAG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 90A (Tc) 4.5V, 10V 4.2mOhm @ 60A, 10V 2V @ 40µA 26 nC @ 5 V ±20V 3200 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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