Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK9528-100A,127

BUK9528-100A,127

MOSFET N-CH 100V 49A TO220AB

NXP USA Inc.
3,864 -

RFQ

BUK9528-100A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 49A (Tc) 4.5V, 10V 27mOhm @ 25A, 10V 2V @ 1mA - ±10V 4293 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9608-55,118

BUK9608-55,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
2,148 -

RFQ

BUK9608-55,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 5V 8mOhm @ 25A, 5V 2V @ 1mA - ±10V 6900 pF @ 25 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9611-55A,118

BUK9611-55A,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
3,149 -

RFQ

BUK9611-55A,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 10mOhm @ 25A, 10V 2V @ 1mA - ±10V 4230 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9616-55A,118

BUK9616-55A,118

MOSFET N-CH 55V 66A D2PAK

NXP USA Inc.
3,301 -

RFQ

BUK9616-55A,118

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 5V, 10V 15mOhm @ 25A, 10V 2V @ 1mA - ±10V 3085 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9620-100A,118

BUK9620-100A,118

MOSFET N-CH 100V 63A D2PAK

NXP USA Inc.
3,059 -

RFQ

BUK9620-100A,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 4.5V, 10V 19mOhm @ 25A, 10V 2V @ 1mA - ±10V 6385 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD04N03LB G

IPD04N03LB G

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
1,144 -

RFQ

IPD04N03LB G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.1mOhm @ 50A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS6912

FDS6912

POWER FIELD-EFFECT TRANSISTOR, 6

onsemi
32,189 -

RFQ

FDS6912

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF6637TRPBF

IRF6637TRPBF

MOSFET N-CH 30V 14A/59A DIRECTFT

International Rectifier
31,374 -

RFQ

IRF6637TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 59A (Tc) 4.5V, 10V 7.7mOhm @ 14A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1330 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6722MTRPBF

IRF6722MTRPBF

MOSFET N-CH 30V 13A/56A DIRECTFT

International Rectifier
12,066 -

RFQ

IRF6722MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 56A (Tc) 4.5V, 10V 7.7mOhm @ 13A, 10V 2.4V @ 50µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN70R360P7SATMA1

IPN70R360P7SATMA1

MOSFET N-CH 700V 12.5A SOT223

Infineon Technologies
2,998 -

RFQ

IPN70R360P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 7.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDMS7572S

FDMS7572S

MOSFET N-CH 25V 23A/49A 8PQFN

Fairchild Semiconductor
81,825 -

RFQ

FDMS7572S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 23A (Ta), 49A (Tc) 4.5V, 10V 2.9mOhm @ 23A, 10V 3V @ 1mA 45 nC @ 10 V ±20V 2780 pF @ 13 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFZ48Z

AUIRFZ48Z

MOSFET N-CH 55V 61A TO220

International Rectifier
5,982 -

RFQ

AUIRFZ48Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
PJQ5440_R2_00001

PJQ5440_R2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,980 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 17A (Ta), 100A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 4.5 V ±20V 5214 pF @ 25 V - 2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP08N50C3XKSA1

SPP08N50C3XKSA1

SPP08N50 - 800V COOLMOS N-CHANNE

Infineon Technologies
22,195 -

RFQ

SPP08N50C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1

MOSFET N-CH 80V 40A TSDSON

Infineon Technologies
2,709 -

RFQ

BSZ110N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 6V, 10V 11mOhm @ 20A, 10V 3.8V @ 22µA 18.5 nC @ 10 V ±20V 1300 pF @ 40 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7420TRPBF

IRF7420TRPBF

MOSFET P-CH 12V 11.5A 8SO

Infineon Technologies
2,622 -

RFQ

IRF7420TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 12 V 11.5A (Tc) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±8V 3529 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD70R360P7SAUMA1

IPD70R360P7SAUMA1

MOSFET N-CH 700V 12.5A TO252-3

Infineon Technologies
1,010 -

RFQ

IPD70R360P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 59.4W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFR540ZTRLPBF

IRFR540ZTRLPBF

MOSFET N-CH 100V 35A DPAK

Infineon Technologies
640 -

RFQ

IRFR540ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA50R299CPXKSA1079

IPA50R299CPXKSA1079

IPA50R299 - 500V COOLMOS N-CHANN

Infineon Technologies
13,500 -

RFQ

IPA50R299CPXKSA1079

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFU8403

AUIRFU8403

MOSFET N-CH 40V 100A I-PAK

International Rectifier
17,422 -

RFQ

AUIRFU8403

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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