Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI147N12N3G

IPI147N12N3G

IPI147N12 - 12V-300V N-CHANNEL P

Infineon Technologies
14,889 -

RFQ

IPI147N12N3G

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 14.7mOhm @ 56A, 10V 4V @ 61µA 49 nC @ 10 V ±20V 3220 pF @ 60 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISC036N04NM5ATMA1

ISC036N04NM5ATMA1

40V 3.6M OPTIMOS MOSFET SUPERSO8

Infineon Technologies
3,728 -

RFQ

ISC036N04NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 98A (Tc) 7V, 10V 3.6mOhm @ 49A, 10V 3.4V @ 23µA 28 nC @ 10 V ±20V 2000 pF @ 20 V - 3W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2730TP-E2-AZ

UPA2730TP-E2-AZ

UPA2730 - POWER FIELD-EFFECT TRA

Renesas
25,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 42A (Tc) 4V, 10V 7mOhm @ 7.5A, 10V 2.5V @ 1mA 97 nC @ 10 V ±20V 4670 pF @ 10 V - 3W (Ta), 40W (Tc) 150°C Surface Mount
FCP380N60E

FCP380N60E

MOSFET N-CH 600V 10.2A TO220-3

Fairchild Semiconductor
26,156 -

RFQ

FCP380N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7483MTRPBF

IRF7483MTRPBF

MOSFET N-CH 40V 135A DIRECTFET

International Rectifier
13,577 -

RFQ

IRF7483MTRPBF

Ficha técnica

Bulk StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 135A (Tc) 6V, 10V 2.3mOhm @ 81A, 10V 3.9V @ 100µA 81 nC @ 10 V ±20V 3913 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R600E6

IPD60R600E6

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies
1,988 -

RFQ

IPD60R600E6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6714MTRPBF

IRF6714MTRPBF

MOSFET N-CH 25V 29A/166A DIRECT

International Rectifier
57,904 -

RFQ

IRF6714MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 166A (Tc) 4.5V, 10V 2.1mOhm @ 29A, 10V 2.4V @ 100µA 44 nC @ 4.5 V ±20V 3890 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BUK7508-55A,127

BUK7508-55A,127

NEXPERIA BUK7508-55A - 75A, 55V

NXP Semiconductors
10,658 -

RFQ

BUK7508-55A,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) - 8mOhm @ 25A, 10V 4V @ 1mA 76 nC @ 0 V ±20V 4352 pF @ 25 V - 254W (Ta) -55°C ~ 175°C (TJ)
PJQ5427_R2_00001

PJQ5427_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
1,491 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 100A (Tc) 4.5V, 10V 3.3mOhm @ 20A, 10V 2.5V @ 250µA 68 nC @ 4.5 V ±20V 8593 pF @ 15 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF380N65FL1

FCPF380N65FL1

MOSFET N-CH 650V 10.2A TO220F

Fairchild Semiconductor
85,000 -

RFQ

FCPF380N65FL1

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 10.2A (Tc) 10V 380mOhm @ 5.1A, 10V 5V @ 1mA 43 nC @ 10 V ±20V 1680 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ529L06-E

2SJ529L06-E

2SJ529L06 - P-CHANNEL POWER MOSF

Renesas
60,244 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 4V, 10V 160mOhm @ 5A, 10V 2V @ 1mA - ±20V 580 pF @ 10 V - 20W (Tc) 150°C Through Hole
BSC196N10NSGATMA1

BSC196N10NSGATMA1

MOSFET N-CH 100V 8.5A/45A TDSON

Infineon Technologies
31,448 -

RFQ

BSC196N10NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 8.5A (Ta), 45A (Tc) 10V 19.6mOhm @ 45A, 10V 4V @ 42µA 34 nC @ 10 V ±20V 2300 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN9R5-100PS,127

PSMN9R5-100PS,127

NEXPERIA PSMN9R5-100PS - 89A, 10

NXP Semiconductors
42,799 -

RFQ

PSMN9R5-100PS,127

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD03N03LA G

IPD03N03LA G

MOSFET N-CH 25V 90A TO252-3

Infineon Technologies
1,047 -

RFQ

IPD03N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 90A (Tc) 4.5V, 10V 3.2mOhm @ 60A, 10V 2V @ 70µA 41 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT1001RSVRG

APT1001RSVRG

MOSFET N-CH 1000V 11A D3PAK

Microchip Technology
3,883 -

RFQ

APT1001RSVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) - 1Ohm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3660 pF @ 25 V - - - Surface Mount
IXFH170N15X3

IXFH170N15X3

MOSFET N-CH 150V 170A TO247

IXYS
3,367 -

RFQ

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 170A (Tc) 10V 6.7mOhm @ 85A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7620 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR32N80P

IXFR32N80P

MOSFET N-CH 800V 20A ISOPLUS247

IXYS
3,183 -

RFQ

IXFR32N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 290mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1001RBVFRG

APT1001RBVFRG

MOSFET N-CH 1000V 11A TO247

Microchip Technology
3,816 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) - 1Ohm @ 5.5A, 10V 4V @ 1mA 150 nC @ 10 V - 3050 pF @ 25 V - - - Through Hole
IXFT16N120P-TRL

IXFT16N120P-TRL

MOSFET N-CH 1200V 16A TO268

IXYS
3,530 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTR200N10P

IXTR200N10P

MOSFET N-CH 100V 120A ISOPLUS247

IXYS
2,202 -

RFQ

IXTR200N10P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 8mOhm @ 60A, 10V 5V @ 500µA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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