Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPW47N60CFDFKSA1

SPW47N60CFDFKSA1

MOSFET N-CH 600V 46A TO247-3

Infineon Technologies
2,419 -

RFQ

SPW47N60CFDFKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 83mOhm @ 29A, 10V 5V @ 2.9mA 322 nC @ 10 V ±20V 7700 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT22F120L

APT22F120L

MOSFET N-CH 1200V 23A TO264

Microchip Technology
3,967 -

RFQ

APT22F120L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 23A (Tc) 10V 700mOhm @ 12A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8370 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30M70BVFRG

APT30M70BVFRG

MOSFET N-CH 300V 48A TO247

Microchip Technology
3,488 -

RFQ

APT30M70BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 48A (Tc) 10V 70mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 5870 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX120N20

IXFX120N20

MOSFET N-CH 200V 120A PLUS247

IXYS
2,185 -

RFQ

IXFX120N20

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 17mOhm @ 60A, 10V 4V @ 8mA 300 nC @ 10 V ±20V 9100 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX180N10

IXFX180N10

MOSFET N-CH 100V 180A PLUS247

IXYS
2,460 -

RFQ

IXFX180N10

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 390 nC @ 10 V ±20V 10900 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX150N15

IXFX150N15

MOSFET N-CH 150V 150A PLUS247

IXYS
3,744 -

RFQ

IXFX150N15

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 12.5mOhm @ 75A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
S2M0080120K

S2M0080120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions
3,343 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +25V, -10V 1324 pF @ 1000 V - 231W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR24N90P

IXFR24N90P

MOSFET N-CH 900V 13A ISOPLUS247

IXYS
3,480 -

RFQ

IXFR24N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 13A (Tc) 10V 460mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 230W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW47N65C3FKSA1

SPW47N65C3FKSA1

MOSFET N-CH 650V 47A TO247-3

Infineon Technologies
3,372 -

RFQ

SPW47N65C3FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 255 nC @ 10 V ±20V 7000 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR102N30P

IXFR102N30P

MOSFET N-CH 300V 60A ISOPLUS247

IXYS
2,420 -

RFQ

IXFR102N30P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 36mOhm @ 51A, 10V 5V @ 4mA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR180N15P

IXFR180N15P

MOSFET N-CH 150V 100A ISOPLUS247

IXYS
3,985 -

RFQ

IXFR180N15P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 10V 13mOhm @ 90A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STWA40N90K5

STWA40N90K5

MOSFET N-CH 900V 40A TO247

STMicroelectronics
2,662 -

RFQ

STWA40N90K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 40A (Tc) 10V 99mOhm @ 20A, 10V 5V @ 100µA 89 nC @ 10 V ±30V 3260 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8052BFLLG

APT8052BFLLG

MOSFET N-CH 800V 15A TO247

Microchip Technology
3,359 -

RFQ

APT8052BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) - 520mOhm @ 7.5A, 10V 5V @ 1mA 75 nC @ 10 V - 2035 pF @ 25 V - - - Through Hole
APT8056BVRG

APT8056BVRG

MOSFET N-CH 800V 16A TO247

Microchip Technology
2,806 -

RFQ

APT8056BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) - 560mOhm @ 500mA, 10V 4V @ 1mA 275 nC @ 10 V - 4440 pF @ 25 V - - - Through Hole
APT56M60L

APT56M60L

MOSFET N-CH 600V 60A TO264

Microchip Technology
3,953 -

RFQ

APT56M60L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 130mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT84F50L

APT84F50L

MOSFET N-CH 500V 84A TO264

Microchip Technology
3,348 -

RFQ

APT84F50L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 84A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5014SLLG

APT5014SLLG

MOSFET N-CH 500V 35A D3PAK

Microchip Technology
2,882 -

RFQ

APT5014SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 140mOhm @ 17.5A, 10V 5V @ 1mA 72 nC @ 10 V ±30V 3261 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Surface Mount
LSIC1MO120G0080

LSIC1MO120G0080

MOSFET SIC 1200V 25A TO247-4L

Littelfuse Inc.
2,363 -

RFQ

LSIC1MO120G0080

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 92 nC @ 20 V +22V, -6V 170 pF @ 800 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT10090BFLLG

APT10090BFLLG

MOSFET N-CH 1000V 12A TO247

Microchip Technology
3,172 -

RFQ

APT10090BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 950mOhm @ 6A, 10V 5V @ 1mA 71 nC @ 10 V ±30V 1969 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT56M60B2

APT56M60B2

MOSFET N-CH 600V 60A TO247

Microchip Technology
2,770 -

RFQ

APT56M60B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 130mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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