Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PHD21N06LT,118

PHD21N06LT,118

MOSFET N-CH 55V 19A DPAK

NXP USA Inc.
2,533 -

RFQ

PHD21N06LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 5V, 10V 70mOhm @ 10A, 10V 2V @ 1mA 9.4 nC @ 5 V ±15V 650 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD22NQ20T,118

PHD22NQ20T,118

MOSFET N-CH 200V 21.1A DPAK

NXP USA Inc.
2,489 -

RFQ

PHD22NQ20T,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21.1A (Tc) 10V 120mOhm @ 12A, 10V 4V @ 1mA 30.8 nC @ 10 V ±20V 1380 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD23NQ10T,118

PHD23NQ10T,118

MOSFET N-CH 100V 23A DPAK

NXP USA Inc.
2,849 -

RFQ

PHD23NQ10T,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 70mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 1187 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD45N03LTA,118

PHD45N03LTA,118

MOSFET N-CH 25V 40A DPAK

NXP USA Inc.
2,779 -

RFQ

PHD45N03LTA,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 3.5V, 10V 21mOhm @ 25A, 10V 2V @ 1mA 19 nC @ 5 V ±20V 700 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD55N03LTA,118

PHD55N03LTA,118

MOSFET N-CH 25V 55A DPAK

NXP USA Inc.
3,346 -

RFQ

PHD55N03LTA,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 55A (Tc) 5V, 10V 14mOhm @ 25A, 10V 2V @ 1mA 20 nC @ 5 V ±20V 950 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD63NQ03LT,118

PHD63NQ03LT,118

MOSFET N-CH 30V 68.9A DPAK

NXP USA Inc.
2,393 -

RFQ

PHD63NQ03LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 68.9A (Tc) 5V, 10V 13mOhm @ 25A, 10V 2.5V @ 1mA 9.6 nC @ 5 V ±20V 920 pF @ 25 V - 111W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD66NQ03LT,118

PHD66NQ03LT,118

MOSFET N-CH 25V 66A DPAK

NXP USA Inc.
3,925 -

RFQ

PHD66NQ03LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 66A (Tc) 5V, 10V 10.5mOhm @ 25A, 10V 2V @ 1mA 12 nC @ 5 V ±20V 860 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD78NQ03LT,118

PHD78NQ03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.
2,448 -

RFQ

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 9mOhm @ 25A, 10V 2V @ 1mA 11 nC @ 4.5 V ±20V 970 pF @ 12 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD96NQ03LT,118

PHD96NQ03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.
2,466 -

RFQ

PHD96NQ03LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 4.95mOhm @ 25A, 10V 2V @ 1mA 26.7 nC @ 5 V ±20V 2200 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD98N03LT,118

PHD98N03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.
2,983 -

RFQ

PHD98N03LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 5.9mOhm @ 25A, 10V 2V @ 1mA 40 nC @ 5 V ±20V 3000 pF @ 20 V - 111W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHK12NQ10T,518

PHK12NQ10T,518

MOSFET N-CH 100V 11.6A 8SO

NXP USA Inc.
3,520 -

RFQ

PHK12NQ10T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 11.6A (Tc) 10V 28mOhm @ 6A, 10V 4V @ 1mA 35 nC @ 10 V ±20V 1965 pF @ 25 V - 8.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHK4NQ10T,518

PHK4NQ10T,518

MOSFET N-CH 100V 8SO

NXP USA Inc.
2,649 -

RFQ

PHK4NQ10T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V - 4.5V, 10V 70mOhm @ 4A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 880 pF @ 25 V - 2.5W (Ta) -65°C ~ 150°C (TJ) Surface Mount
PHK4NQ20T,518

PHK4NQ20T,518

MOSFET N-CH 200V 4A 8SO

NXP USA Inc.
2,687 -

RFQ

PHK4NQ20T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4A (Tc) 5V, 10V 130mOhm @ 4A, 10V 4V @ 1mA 26 nC @ 10 V ±20V 1230 pF @ 25 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHM12NQ20T,518

PHM12NQ20T,518

MOSFET N-CH 200V 14.4A 8HVSON

NXP USA Inc.
3,488 -

RFQ

PHM12NQ20T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.4A (Tc) 5V, 10V 130mOhm @ 12A, 10V 4V @ 1mA 26 nC @ 10 V ±20V 1230 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH12N120P

IXFH12N120P

MOSFET N-CH 1200V 12A TO247AD

IXYS
2,781 -

RFQ

IXFH12N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5016BFLLG

APT5016BFLLG

MOSFET N-CH 500V 30A TO247

Microchip Technology
2,600 -

RFQ

APT5016BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 160mOhm @ 15A, 10V 5V @ 1mA 72 nC @ 10 V ±30V 2833 pF @ 25 V - 329W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT75F50B2

APT75F50B2

MOSFET N-CH 500V 75A T-MAX

Microchip Technology
2,660 -

RFQ

APT75F50B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 75A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ170N15X3

IXFQ170N15X3

DISCMSFT NCHULTRJNCTN X3CLASS TO

IXYS
3,497 -

RFQ

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 170A (Tc) 10V 6.7mOhm @ 85A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7620 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0040120J1-TR

C3M0040120J1-TR

1200V 40 M SIC MOSFET

Wolfspeed, Inc.
3,508 -

RFQ

C3M0040120J1-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.2mA 94 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 272W (Tc) -40°C ~ 150°C (TJ) Surface Mount
APT66F60B2

APT66F60B2

MOSFET N-CH 600V 70A T-MAX

Microchip Technology
3,046 -

RFQ

APT66F60B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 90mOhm @ 33A, 10V 5V @ 2.5mA 330 nC @ 10 V ±30V 13190 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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