Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFT94N30T

IXFT94N30T

MOSFET N-CH 300V 94A TO268

IXYS
2,262 -

RFQ

IXFT94N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 190 nC @ 10 V ±20V 11400 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT10090SLLG

APT10090SLLG

MOSFET N-CH 1000V 12A D3PAK

Microchip Technology
2,058 -

RFQ

APT10090SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) - 900mOhm @ 6A, 10V 5V @ 1mA 71 nC @ 10 V - 1969 pF @ 25 V - - - Surface Mount
IXFK180N15P

IXFK180N15P

MOSFET N-CH 150V 180A TO264AA

IXYS
3,503 -

RFQ

IXFK180N15P

Ficha técnica

Bulk HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 180A (Tc) 10V 11mOhm @ 90A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHM15NQ20T,518

PHM15NQ20T,518

MOSFET N-CH 200V 17.5A 8HVSON

NXP USA Inc.
3,378 -

RFQ

PHM15NQ20T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17.5A (Tc) 10V 85mOhm @ 15A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 2170 pF @ 30 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHM18NQ15T,518

PHM18NQ15T,518

MOSFET N-CH 150V 19A 8HVSON

NXP USA Inc.
2,427 -

RFQ

PHM18NQ15T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 19A (Tc) 5V, 10V 75mOhm @ 12A, 10V 4V @ 1mA 26.4 nC @ 10 V ±20V 1150 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHM21NQ15T,518

PHM21NQ15T,518

MOSFET N-CH 150V 22.2A 8HVSON

NXP USA Inc.
2,002 -

RFQ

PHM21NQ15T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 22.2A (Tc) 5V, 10V 55mOhm @ 15A, 10V 4V @ 1mA 36.2 nC @ 10 V ±20V 2080 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHM25NQ10T,518

PHM25NQ10T,518

MOSFET N-CH 100V 30.7A 8HVSON

NXP USA Inc.
2,726 -

RFQ

PHM25NQ10T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 30.7A (Tc) 10V 30mOhm @ 10A, 10V 4V @ 1mA 26.6 nC @ 10 V ±20V 1800 pF @ 20 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHM30NQ10T,518

PHM30NQ10T,518

MOSFET N-CH 100V 37.6A 8HVSON

NXP USA Inc.
3,627 -

RFQ

PHM30NQ10T,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 37.6A (Tc) 10V 20mOhm @ 18A, 10V 4V @ 1mA 53.7 nC @ 10 V ±20V 3600 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHP101NQ03LT,127

PHP101NQ03LT,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.
3,954 -

RFQ

PHP101NQ03LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 5.5mOhm @ 25A, 10V 2.5V @ 1mA 23 nC @ 5 V ±20V 2180 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP101NQ04T,127

PHP101NQ04T,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
2,890 -

RFQ

PHP101NQ04T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 8mOhm @ 25A, 10V 4V @ 1mA 36.6 nC @ 10 V ±20V 2020 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP110NQ06LT,127

PHP110NQ06LT,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,590 -

RFQ

PHP110NQ06LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 7mOhm @ 25A, 10V 2V @ 1mA 45 nC @ 5 V ±15V 3960 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP112N06T,127

PHP112N06T,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,277 -

RFQ

PHP112N06T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 25A, 10V 4V @ 1mA 87 nC @ 10 V ±20V 4352 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP119NQ06T,127

PHP119NQ06T,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
3,616 -

RFQ

PHP119NQ06T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.1mOhm @ 25A, 10V 4V @ 1mA 53 nC @ 10 V ±20V 2820 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP129NQ04LT,127

PHP129NQ04LT,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
3,249 -

RFQ

PHP129NQ04LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 5mOhm @ 25A, 10V 2V @ 1mA 44.2 nC @ 5 V ±15V 3965 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP143NQ04T,127

PHP143NQ04T,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
3,397 -

RFQ

PHP143NQ04T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.2mOhm @ 25A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 2840 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP14NQ20T,127

PHP14NQ20T,127

MOSFET N-CH 200V 14A TO220AB

NXP USA Inc.
3,237 -

RFQ

PHP14NQ20T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14A (Tc) 10V 230mOhm @ 7A, 10V 4V @ 1mA 38 nC @ 10 V ±20V 1500 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP152NQ03LTA,127

PHP152NQ03LTA,127

MOSFET N-CH 25V 75A TO220AB

NXP USA Inc.
3,997 -

RFQ

PHP152NQ03LTA,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 36 nC @ 5 V ±20V 3140 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP174NQ04LT,127

PHP174NQ04LT,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
2,271 -

RFQ

PHP174NQ04LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 64 nC @ 5 V ±15V 5345 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP176NQ04T,127

PHP176NQ04T,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
3,363 -

RFQ

PHP176NQ04T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 68.9 nC @ 10 V ±20V 3620 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP193NQ06T,127

PHP193NQ06T,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,003 -

RFQ

PHP193NQ06T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 85.6 nC @ 10 V ±20V 5082 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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