Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFZ44VZSTRL

AUIRFZ44VZSTRL

MOSFET N-CH 60V 57A D2PAK

International Rectifier
71,650 -

RFQ

AUIRFZ44VZSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2706GR-E2-AT

UPA2706GR-E2-AT

UPA2706GR-E2-AT - MOS FIELD EFFE

Renesas
20,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 20A (Tc) 4V, 10V 15mOhm @ 5.5A, 10V 2.5V @ 1mA 7.1 nC @ 5 V ±20V 660 pF @ 10 V - 3W (Ta), 15W (Tc) 150°C Surface Mount
AUIRLU3114Z-701TRL

AUIRLU3114Z-701TRL

AUIRLU3114Z - 20V-40V N-CHANNEL

Infineon Technologies
39,000 -

RFQ

AUIRLU3114Z-701TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR8405

AUIRFR8405

MOSFET N-CH 40V 100A DPAK

International Rectifier
19,542 -

RFQ

AUIRFR8405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.98mOhm @ 90A, 10V 3.9V @ 100µA 155 nC @ 10 V ±20V 5171 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD02N80C3ATMA1

SPD02N80C3ATMA1

MOSFET N-CH 800V 2A TO252-3

Infineon Technologies
2,522 -

RFQ

SPD02N80C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 120µA 16 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFZ24NSTRL

AUIRFZ24NSTRL

MOSFET N-CH 55V 17A DPAK

International Rectifier
85,362 -

RFQ

AUIRFZ24NSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD6688

FDD6688

MOSFET N-CH 30V 84A DPAK

Fairchild Semiconductor
151,902 -

RFQ

FDD6688

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 3845 pF @ 15 V - 83W (Ta) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3410TR

AUIRLR3410TR

AUTOMOTIVE HEXFET N-CHANNEL POWE

International Rectifier
38,000 -

RFQ

AUIRLR3410TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP06N60C3XKSA1

SPP06N60C3XKSA1

SPP06N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
4,964 -

RFQ

SPP06N60C3XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR2405TRLPBF

IRFR2405TRLPBF

MOSFET N-CH 55V 56A DPAK

Infineon Technologies
2,097 -

RFQ

IRFR2405TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 56A (Tc) 10V 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3712-Z-E1-AZ

2SK3712-Z-E1-AZ

MOSFET N-CH 250V 9A TO252

Renesas Electronics America Inc
22,000 -

RFQ

2SK3712-Z-E1-AZ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 9A (Tc) - 580mOhm @ 4.5A, 10V 4.5V @ 1mA 14 nC @ 10 V - 450 pF @ 10 V - - - Surface Mount
IRF6616TRPBF

IRF6616TRPBF

IRF6616 - MOSFET, 40V, 106A, 5.0

International Rectifier
36,648 -

RFQ

IRF6616TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3765 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6618TRPBF

IRF6618TRPBF

IRF6618 - DIRECTFET POWER MOSFET

International Rectifier
24,572 -

RFQ

IRF6618TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.35V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6797MTRPBF

IRF6797MTRPBF

IRF6797 - 12V-300V N-CHANNEL POW

Infineon Technologies
19,200 -

RFQ

IRF6797MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6797MTRPBF

IRF6797MTRPBF

MOSFET N-CH 25V 36A/210A DIRECT

International Rectifier
11,833 -

RFQ

IRF6797MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
GC11N65K

GC11N65K

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor
2,490 -

RFQ

GC11N65K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK763R1-40B,118

BUK763R1-40B,118

NEXPERIA BUK763R1-40B - 75A, 40V

NXP Semiconductors
12,400 -

RFQ

BUK763R1-40B,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 94 nC @ 10 V ±20V 6808 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLH5034TRPBF

IRLH5034TRPBF

MOSFET N-CH 40V 29A/100A 8PQFN

Infineon Technologies
3,934 -

RFQ

IRLH5034TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 100A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2.5V @ 150µA 82 nC @ 10 V ±16V 4730 pF @ 25 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC109N10NS3GATMA1

BSC109N10NS3GATMA1

MOSFET N-CH 100V 63A TDSON-8-1

Infineon Technologies
4,178 -

RFQ

BSC109N10NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 6V, 10V 10.9mOhm @ 46A, 10V 3.5V @ 45µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS3008SDC

FDMS3008SDC

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
6,000 -

RFQ

FDMS3008SDC

Ficha técnica

Bulk Dual Cool™, PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta) 4.5V, 10V 2.6mOhm @ 28A, 10V 3V @ 1mA 64 nC @ 10 V ±20V 4520 pF @ 15 V - 3.3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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