Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PHP21N06LT,127

PHP21N06LT,127

MOSFET N-CH 55V 19A TO220AB

NXP USA Inc.
3,927 -

RFQ

PHP21N06LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 5V, 10V 70mOhm @ 10A, 10V 2V @ 1mA 9.4 nC @ 5 V ±15V 650 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP222NQ04LT,127

PHP222NQ04LT,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
3,624 -

RFQ

PHP222NQ04LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 2.8mOhm @ 25A, 10V 2V @ 1mA 93.6 nC @ 5 V ±15V 7880 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP225NQ04T,127

PHP225NQ04T,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
2,338 -

RFQ

PHP225NQ04T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 94 nC @ 10 V ±20V 5100 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP3055E,127

PHP3055E,127

MOSFET N-CH 60V 10.3A TO220AB

NXP USA Inc.
2,820 -

RFQ

PHP3055E,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10.3A (Tc) 10V 150mOhm @ 5.5A, 10V 4V @ 1mA 5.8 nC @ 10 V ±20V 250 pF @ 25 V - 33W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP32N06LT,127

PHP32N06LT,127

MOSFET N-CH 60V 34A TO220AB

NXP USA Inc.
3,084 -

RFQ

PHP32N06LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 34A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 2V @ 1mA 17 nC @ 5 V ±15V 1280 pF @ 25 V - 97W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP34NQ11T,127

PHP34NQ11T,127

MOSFET N-CH 110V 35A TO220AB

NXP USA Inc.
2,962 -

RFQ

PHP34NQ11T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 110 V 35A (Tc) 10V 40mOhm @ 17A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1700 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP45NQ15T,127

PHP45NQ15T,127

MOSFET N-CH 150V 45.1A TO220AB

NXP USA Inc.
3,559 -

RFQ

PHP45NQ15T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 45.1A (Tc) 10V 42mOhm @ 20A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 1770 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP52N06T,127

PHP52N06T,127

MOSFET N-CH 60V 52A TO220AB

NXP USA Inc.
2,908 -

RFQ

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 52A (Tc) 10V 22mOhm @ 25A, 10V 4V @ 1mA 36 nC @ 10 V ±20V 1592 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP66NQ03LT,127

PHP66NQ03LT,127

MOSFET N-CH 25V 66A TO220AB

NXP USA Inc.
3,864 -

RFQ

PHP66NQ03LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 66A (Tc) 5V, 10V 10.5mOhm @ 25A, 10V 2V @ 1mA 12 nC @ 5 V ±20V 860 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP73N06T,127

PHP73N06T,127

MOSFET N-CH 60V 73A TO220AB

NXP USA Inc.
2,596 -

RFQ

PHP73N06T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 73A (Tc) 10V 14mOhm @ 25A, 10V 4V @ 1mA 54 nC @ 10 V ±20V 2464 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP75NQ08T,127

PHP75NQ08T,127

MOSFET N-CH 75V 75A TO220AB

NXP USA Inc.
3,386 -

RFQ

PHP75NQ08T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 13mOhm @ 25A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1985 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP78NQ03LT,127

PHP78NQ03LT,127

MOSFET N-CH 25V 75A TO220AB

NXP USA Inc.
3,141 -

RFQ

PHP78NQ03LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 9mOhm @ 25A, 10V 2V @ 1mA 13 nC @ 5 V ±20V 1074 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP83N03LT,127

PHP83N03LT,127

MOSFET N-CH 25V 75A TO220AB

NXP USA Inc.
3,550 -

RFQ

PHP83N03LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 9mOhm @ 25A, 10V 2V @ 1mA 33 nC @ 5 V ±15V 1660 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHT2NQ10T,135

PHT2NQ10T,135

MOSFET N-CH 100V 2.5A SOT223

NXP USA Inc.
2,325 -

RFQ

PHT2NQ10T,135

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 2.5A (Tc) 10V 430mOhm @ 1.75A, 10V 4V @ 1mA 5.1 nC @ 10 V ±20V 160 pF @ 25 V - 6.25W (Tc) -65°C ~ 150°C (TJ) Surface Mount
BSC0901NSATMA1

BSC0901NSATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
4,740 -

RFQ

BSC0901NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 30A, 10V 2.2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK6011DP3-A0#J2

RJK6011DP3-A0#J2

RJK6011DP3-A0#J2 - SILICON NCH S

Renesas
45,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 100mA - - - - - - - - - Surface Mount
AUIRF1010Z

AUIRF1010Z

MOSFET N-CH 55V 75A TO220AB

International Rectifier
13,409 -

RFQ

AUIRF1010Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7451TRPBF

IRF7451TRPBF

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies
3,305 -

RFQ

IRF7451TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 990 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJMF900N65E1_T0_00001

PJMF900N65E1_T0_00001

650V/ 900MOHM SUPER JUNCTION EAS

Panjit International Inc.
1,980 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 900mOhm @ 1.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 382 pF @ 400 V - 25.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK6E4R0-75C,127

BUK6E4R0-75C,127

NEXPERIA BUK6E4R0-75C - 120A, 75

NXP Semiconductors
19,992 -

RFQ

BUK6E4R0-75C,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 4.5V, 10V 4.2mOhm @ 25A, 10V 2.8V @ 1mA 234 nC @ 10 V ±16V 15450 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário