Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQA32N20C

FQA32N20C

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
32,361 -

RFQ

FQA32N20C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 82mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2220 pF @ 25 V - 204W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7854TRPBF

IRF7854TRPBF

MOSFET N-CH 80V 10A 8SO

Infineon Technologies
2,700 -

RFQ

IRF7854TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta) 10V 13.4mOhm @ 10A, 10V 4.9V @ 100µA 41 nC @ 10 V ±20V 1620 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7469TRPBF

IRF7469TRPBF

MOSFET N-CH 40V 9A 8SO

Infineon Technologies
5,147 -

RFQ

IRF7469TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXFR180N06

IXFR180N06

MOSFET N-CH 60V 180A ISOPLUS247

IXYS
3,341 -

RFQ

IXFR180N06

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 5mOhm @ 90A, 10V 4V @ 8mA 420 nC @ 10 V ±20V 7650 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW40N90K5

STW40N90K5

MOSFET N-CH 900V 40A TO247

STMicroelectronics
2,195 -

RFQ

STW40N90K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 40A (Tc) 10V 99mOhm @ 20A, 10V 5V @ 100µA 89 nC @ 10 V ±30V 3260 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW60NM50N

STW60NM50N

MOSFET N-CH 500V 68A TO247

STMicroelectronics
2,438 -

RFQ

STW60NM50N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 68A (Tc) 10V 43mOhm @ 34A, 10V 4V @ 250µA 178 nC @ 10 V ±25V 5790 pF @ 100 V - 446W (Tc) 150°C (TJ) Through Hole
NVH4L018N075SC1

NVH4L018N075SC1

SIC MOS TO247-4L 750V

onsemi
2,953 -

RFQ

NVH4L018N075SC1

Ficha técnica

Tray Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 750 V 140A (Tc) 15V, 18V 18mOhm @ 66A, 18V 4.3V @ 22mA 262 nC @ 18 V +22V, -8V 5010 pF @ 375 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT8043BLLG

APT8043BLLG

MOSFET N-CH 800V 20A TO247

Microchip Technology
2,182 -

RFQ

APT8043BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) - 430mOhm @ 5A, 10V 5V @ 1mA 85 nC @ 10 V - 2500 pF @ 25 V - - - Through Hole
NTC040N120SC1

NTC040N120SC1

SIC MOS WAFER SALES 40MOHM 1200V

onsemi
2,048 -

RFQ

NTC040N120SC1

Ficha técnica

Tray - Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1781 pF @ 800 V - 348W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTQ60N20L2

IXTQ60N20L2

MOSFET N-CH 200V 60A TO3P

IXYS
3,892 -

RFQ

IXTQ60N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 250µA 255 nC @ 10 V ±20V 10500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK26N90

IXFK26N90

MOSFET N-CH 900V 26A TO-264

IXYS
3,693 -

RFQ

IXFK26N90

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 26A (Tc) 10V 300mOhm @ 13A, 10V 5V @ 8mA 240 nC @ 10 V ±20V 10800 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6017LFLLG

APT6017LFLLG

MOSFET N-CH 600V 35A TO264

Microsemi Corporation
3,211 -

RFQ

APT6017LFLLG

Ficha técnica

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 170mOhm @ 17.5A, 10V 5V @ 2.5mA 100 nC @ 10 V ±30V 4500 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX24N100

IXFX24N100

MOSFET N-CH 1000V 24A PLUS 247

IXYS
2,323 -

RFQ

IXFX24N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 267 nC @ 10 V ±20V 8700 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010B2VRG

APT5010B2VRG

MOSFET N-CH 500V 47A T-MAX

Microchip Technology
2,534 -

RFQ

APT5010B2VRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
IXTH30N25L2

IXTH30N25L2

MOSFET N-CH 250V 30A TO247

IXYS
3,704 -

RFQ

IXTH30N25L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 140mOhm @ 15A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 3200 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT84M50B2

APT84M50B2

MOSFET N-CH 500V 84A T-MAX

Microchip Technology
2,915 -

RFQ

APT84M50B2

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 84A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6021BFLLG

APT6021BFLLG

MOSFET N-CH 600V 29A TO247

Microchip Technology
3,464 -

RFQ

APT6021BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) - 210mOhm @ 14.5A, 10V 5V @ 1mA 80 nC @ 10 V - 3470 pF @ 25 V - - - Through Hole
IXFR24N100

IXFR24N100

MOSFET N-CH 1KV 22A ISOPLUS247

IXYS
2,575 -

RFQ

IXFR24N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 22A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 267 nC @ 10 V ±20V 8700 pF @ 25 V - 416W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1201R6BVFRG

APT1201R6BVFRG

MOSFET N-CH 1200V 8A TO247

Microchip Technology
2,483 -

RFQ

APT1201R6BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 8A (Tc) - 1.6Ohm @ 4A, 10V 4V @ 1mA 230 nC @ 10 V - 3660 pF @ 25 V - - - Through Hole
APT24M120L

APT24M120L

MOSFET N-CH 1200V 24A TO264

Microchip Technology
2,691 -

RFQ

APT24M120L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 24A (Tc) 10V 680mOhm @ 12A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8370 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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