Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN020-150W,127

PSMN020-150W,127

MOSFET N-CH 150V 73A TO247-3

NXP USA Inc.
2,487 -

RFQ

PSMN020-150W,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 73A (Tc) 10V 20mOhm @ 25A, 10V 4V @ 1mA 227 nC @ 10 V ±20V 9537 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN040-200W,127

PSMN040-200W,127

MOSFET N-CH 200V 50A TO247-3

NXP USA Inc.
2,580 -

RFQ

PSMN040-200W,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 40mOhm @ 25A, 10V 4V @ 1mA 183 nC @ 10 V ±20V 9530 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI4420DY,518

SI4420DY,518

MOSFET N-CH 30V SOT96-1

NXP USA Inc.
3,439 -

RFQ

SI4420DY,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Tj) 4.5V, 10V 9mOhm @ 12.5A, 10V 1V @ 250µA 120 nC @ 10 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4800,518

SI4800,518

MOSFET N-CH 30V 9A 8SO

NXP USA Inc.
3,455 -

RFQ

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 18.5mOhm @ 9A, 10V 800mV @ 250µA 11.8 nC @ 5 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI9410DY,518

SI9410DY,518

MOSFET N-CH 30V SOT96-1

NXP USA Inc.
2,960 -

RFQ

SI9410DY,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Tj) 4.5V, 10V 30mOhm @ 7A, 10V 1V @ 250µA 50 nC @ 10 V ±20V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXFT44N50Q3

IXFT44N50Q3

MOSFET N-CH 500V 44A TO268

IXYS
3,693 -

RFQ

IXFT44N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 6.5V @ 4mA 93 nC @ 10 V ±30V 4800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT60N60SCSG/TR

APT60N60SCSG/TR

MOSFET N-CH 600V 60A D3PAK

Microchip Technology
3,097 -

RFQ

APT60N60SCSG/TR

Ficha técnica

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V Super Junction 431W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX34N80

IXFX34N80

MOSFET N-CH 800V 34A PLUS247

IXYS
2,404 -

RFQ

IXFX34N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 240mOhm @ 17A, 10V 5V @ 8mA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6021SFLLG

APT6021SFLLG

MOSFET N-CH 600V 29A D3PAK

Microchip Technology
2,731 -

RFQ

APT6021SFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) - 210mOhm @ 14.5A, 10V 5V @ 1mA 80 nC @ 10 V - 3470 pF @ 25 V - - - Surface Mount
IXTX600N04T2

IXTX600N04T2

MOSFET N-CH 40V 600A PLUS247-3

IXYS
2,442 -

RFQ

IXTX600N04T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.5mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR16N120P

IXFR16N120P

MOSFET N-CH 1200V 9A ISOPLUS247

IXYS
2,016 -

RFQ

IXFR16N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 9A (Tc) 10V 1.04Ohm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 230W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX550N055T2

IXTX550N055T2

MOSFET N-CH 55V 550A PLUS247-3

IXYS
2,756 -

RFQ

IXTX550N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT20M22LVRG

APT20M22LVRG

MOSFET N-CH 200V 100A TO264

Microchip Technology
3,731 -

RFQ

APT20M22LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT30N120D2

SCT30N120D2

SICFET N-CH 1200V 40A HIP247

STMicroelectronics
2,385 -

RFQ

Tray - Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 20V 100mOhm @ 20A, 20V 3.5V @ 1mA 105 nC @ 20 V +25V, -10V 1700 pF @ 400 V - 270W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXTT140N075L2HV-TR

IXTT140N075L2HV-TR

DISC MOSFET N-CH LINEAR L2 TO-26

IXYS
2,733 -

RFQ

Tape & Reel (TR) LinearL2™ Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 11mOhm @ 70A, 10V 4.5V @ 250µA 275 nC @ 10 V ±20V 9300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT1201R6SVFRG

APT1201R6SVFRG

MOSFET N-CH 1200V 8A D3PAK

Microchip Technology
2,512 -

RFQ

APT1201R6SVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 8A (Tc) - 1.6Ohm @ 4A, 10V 4V @ 1mA 230 nC @ 10 V - 3660 pF @ 25 V - - - Surface Mount
IXTK550N055T2

IXTK550N055T2

MOSFET N-CH 55V 550A TO264

IXYS
2,359 -

RFQ

IXTK550N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTK600N04T2

IXTK600N04T2

MOSFET N-CH 40V 600A TO264

IXYS
2,260 -

RFQ

IXTK600N04T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.5mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK420N10T

IXFK420N10T

MOSFET N-CH 100V 420A TO264AA

IXYS
2,128 -

RFQ

IXFK420N10T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX170N20P

IXFX170N20P

MOSFET N-CH 200V 170A PLUS247-3

IXYS
2,223 -

RFQ

IXFX170N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 14mOhm @ 500mA, 10V 5V @ 1mA 185 nC @ 10 V ±20V 11400 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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