Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFX250N10P

IXFX250N10P

MOSFET N-CH 100V 250A PLUS247-3

IXYS
2,333 -

RFQ

IXFX250N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 6.5mOhm @ 50A, 10V 5V @ 1mA 205 nC @ 10 V ±20V 16000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT320N10T2

IXFT320N10T2

MOSFET N-CH 100V 320A TO268

IXYS
2,996 -

RFQ

IXFT320N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 250µA 430 nC @ 10 V ±20V 26000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTT60N20L2

IXTT60N20L2

MOSFET N-CH 200V 60A TO268

IXYS
3,000 -

RFQ

IXTT60N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 250µA 255 nC @ 10 V ±20V 10500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT110N10L2

IXTT110N10L2

MOSFET N-CH 100V 110A TO268

IXYS
3,992 -

RFQ

IXTT110N10L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 18mOhm @ 55A, 10V 4.5V @ 250µA 260 nC @ 10 V ±20V 10500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT36N90BC3G

APT36N90BC3G

MOSFET N-CH 900V 36A TO247

Microsemi Corporation
2,823 -

RFQ

APT36N90BC3G

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 18A, 10V 3.5V @ 2.9mA 252 nC @ 10 V ±20V 7463 pF @ 25 V Super Junction 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK24N100

IXFK24N100

MOSFET N-CH 1KV 24A TO-264AA

IXYS
3,984 -

RFQ

IXFK24N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 267 nC @ 10 V ±20V 8700 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8043SFLLG

APT8043SFLLG

MOSFET N-CH 800V 20A D3PAK

Microchip Technology
2,930 -

RFQ

APT8043SFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) - 430mOhm @ 10A, 10V 5V @ 1mA 85 nC @ 10 V - 2500 pF @ 25 V - - - Surface Mount
IXFK170N20P

IXFK170N20P

MOSFET N-CH 200V 170A TO264AA

IXYS
2,698 -

RFQ

IXFK170N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 14mOhm @ 500mA, 10V 5V @ 1mA 185 nC @ 10 V ±20V 11400 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVH4L020N090SC1

NVH4L020N090SC1

SIC MOSFET 900V TO247-4L

onsemi
2,700 -

RFQ

NVH4L020N090SC1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 900 V 116A (Tc) 15V, 18V 16mOhm @ 60A, 18V 4.3V @ 20mA 196 nC @ 15 V +22V, -8V 4415 pF @ 450 V - 484W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT10086BVFRG

APT10086BVFRG

MOSFET N-CH 1000V 13A TO247

Microchip Technology
3,407 -

RFQ

APT10086BVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 13A (Tc) - 860mOhm @ 500mA, 10V 4V @ 1mA 275 nC @ 10 V - 4440 pF @ 25 V - - - Through Hole
IXFR44N50Q

IXFR44N50Q

MOSFET N-CH 500V 34A ISOPLUS247

IXYS
2,936 -

RFQ

IXFR44N50Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 120mOhm @ 22A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 7000 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFJ26N50P3

IXFJ26N50P3

MOSFET N-CH 500V 14A TO247

IXYS
3,009 -

RFQ

IXFJ26N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 265mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1T660N04T4

MMIX1T660N04T4

MOSFET N-CH 40V 660A 24SMPD

IXYS
2,460 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 660A (Tc) 10V 0.85mOhm @ 100A, 10V 4V @ 250µA 860 nC @ 10 V ±15V 44000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT50M75B2LLG

APT50M75B2LLG

MOSFET N-CH 500V 57A T-MAX

Microchip Technology
3,489 -

RFQ

APT50M75B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) 10V 75mOhm @ 28.5A, 10V 5V @ 2.5mA 125 nC @ 10 V ±30V 5590 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK75150-55A,127

BUK75150-55A,127

MOSFET N-CH 55V 11A TO220AB

NXP USA Inc.
2,433 -

RFQ

BUK75150-55A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 150mOhm @ 5A, 10V 4V @ 1mA 5.5 nC @ 10 V ±20V 322 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7523-75A,127

BUK7523-75A,127

MOSFET N-CH 75V 53A TO220AB

NXP USA Inc.
3,287 -

RFQ

BUK7523-75A,127

Ficha técnica

Bulk,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 53A (Tc) 10V 23mOhm @ 25A, 10V 4V @ 1mA - ±20V 2385 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7524-55A,127

BUK7524-55A,127

MOSFET N-CH 55V 47A TO220AB

NXP USA Inc.
3,137 -

RFQ

BUK7524-55A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 10V 24mOhm @ 25A, 10V 4V @ 1mA - ±20V 1310 pF @ 25 V - 106W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK752R7-30B,127

BUK752R7-30B,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.
3,821 -

RFQ

BUK752R7-30B,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.7mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 6212 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK754R3-40B,127

BUK754R3-40B,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.
900 -

RFQ

BUK754R3-40B,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4824 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK76150-55A,118

BUK76150-55A,118

MOSFET N-CH 55V 11A D2PAK

NXP USA Inc.
3,695 -

RFQ

BUK76150-55A,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 150mOhm @ 5A, 10V 4V @ 1mA 5.5 nC @ 10 V ±20V 322 pF @ 25 V - 36W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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