Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPWS65R022CFD7AXKSA1

IPWS65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies
2,087 -

RFQ

IPWS65R022CFD7AXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±30V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXFX240N15T2

IXFX240N15T2

MOSFET N-CH 150V 240A PLUS247-3

IXYS
2,928 -

RFQ

IXFX240N15T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 460 nC @ 10 V ±20V 32000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK34N80

IXFK34N80

MOSFET N-CH 800V 34A TO-264AA

IXYS
3,133 -

RFQ

IXFK34N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 240mOhm @ 17A, 10V 5V @ 8mA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT60N60SCSG

APT60N60SCSG

MOSFET N-CH 600V 60A D3PAK

Microchip Technology
3,403 -

RFQ

APT60N60SCSG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V Super Junction 431W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX150N30P3

IXFX150N30P3

MOSFET N-CH 300V 150A PLUS247-3

IXYS
3,743 -

RFQ

IXFX150N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 19mOhm @ 75A, 10V 5V @ 8mA 197 nC @ 10 V ±20V 12100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N10

IXFK170N10

MOSFET N-CH 100V 170A TO-264AA

IXYS
3,618 -

RFQ

IXFK170N10

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 8mA 515 nC @ 10 V ±20V 10300 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT44F80L

APT44F80L

MOSFET N-CH 800V 47A TO264

Microchip Technology
3,880 -

RFQ

APT44F80L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 47A (Tc) 10V 240mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK140N30P

IXTK140N30P

MOSFET N-CH 300V 140A TO264

IXYS
2,083 -

RFQ

IXTK140N30P

Ficha técnica

Bulk Polar Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 500µA 185 nC @ 10 V ±20V 14800 pF @ 25 V - - - Through Hole
APT40M70LVRG

APT40M70LVRG

MOSFET N-CH 400V 57A TO264

Microchip Technology
3,173 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 400 V 57A (Tc) 10V 70mOhm @ 28.5A, 10V 4V @ 2.5mA 495 nC @ 10 V ±30V 8890 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH58N25L2

IXTH58N25L2

MOSFET N-CH 250V 58A TO247

IXYS
2,547 -

RFQ

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 58A (Tc) 10V 64mOhm @ 29A, 10V 4.5V @ 250µA 330 nC @ 10 V ±20V 9200 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
STY60NM60

STY60NM60

MOSFET N-CH 600V 60A MAX247

STMicroelectronics
3,096 -

RFQ

STY60NM60

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 55mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7300 pF @ 25 V - 560W (Tc) 150°C (TJ) Through Hole
APT44F80B2

APT44F80B2

MOSFET N-CH 800V 47A T-MAX

Microchip Technology
3,839 -

RFQ

APT44F80B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 47A (Tc) 10V 210mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M22LVFRG

APT20M22LVFRG

MOSFET N-CH 200V 100A TO264

Microchip Technology
3,907 -

RFQ

APT20M22LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6015LVFRG

APT6015LVFRG

MOSFET N-CH 600V 38A TO264

Microchip Technology
2,019 -

RFQ

APT6015LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - 150mOhm @ 500mA, 10V 4V @ 2.5mA 475 nC @ 10 V - 9000 pF @ 25 V - - - Through Hole
HCT7000M

HCT7000M

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology
2,026 -

RFQ

HCT7000M

Ficha técnica

Bulk,Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF3710ZSTRR

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

International Rectifier
160,624 -

RFQ

AUIRF3710ZSTRR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) - 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V - 2900 pF @ 25 V - - - Surface Mount
AUIRF3205Z

AUIRF3205Z

AUIRF3205Z - 55V-60V N-CHANNEL A

International Rectifier
3,544 -

RFQ

AUIRF3205Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8405TRL

AUIRFS8405TRL

MOSFET N-CH 40V 120A D2PAK

International Rectifier
136,035 -

RFQ

AUIRFS8405TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF165N65S3R0L

FCPF165N65S3R0L

FCPF165N65S3R0L - POWER MOSFET

Fairchild Semiconductor
11,630 -

RFQ

Bulk SuperFET® III Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 410µA 35 nC @ 10 V ±30V 1415 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ)
BSC020N03MSGATMA1

BSC020N03MSGATMA1

MOSFET N-CH 30V 25A/100A TDSON

Infineon Technologies
17,072 -

RFQ

BSC020N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2V @ 250µA 124 nC @ 10 V ±20V 9600 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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