Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PHB153NQ08LT,118

PHB153NQ08LT,118

MOSFET N-CH 75V 75A D2PAK

NXP USA Inc.
3,788 -

RFQ

PHB153NQ08LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 4.5V, 10V 5.5mOhm @ 25A, 10V 2V @ 1mA 95 nC @ 5 V ±15V 8770 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB160NQ08T,118

PHB160NQ08T,118

MOSFET N-CH 75V 75A D2PAK

NXP USA Inc.
3,477 -

RFQ

PHB160NQ08T,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 5.6mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 5585 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB55N03LTA,118

PHB55N03LTA,118

MOSFET N-CH 25V 55A D2PAK

NXP USA Inc.
2,021 -

RFQ

PHB55N03LTA,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 55A (Tc) 5V, 10V 14mOhm @ 25A, 10V 2V @ 1mA 20 nC @ 5 V ±20V 950 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB96NQ03LT,118

PHB96NQ03LT,118

MOSFET N-CH 25V 75A D2PAK

NXP USA Inc.
3,672 -

RFQ

PHB96NQ03LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 4.95mOhm @ 25A, 10V 2V @ 1mA 26.7 nC @ 5 V ±20V 2200 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD108NQ03LT,118

PHD108NQ03LT,118

MOSFET N-CH 25V 75A DPAK

NXP USA Inc.
1,190 -

RFQ

PHD108NQ03LT,118

Ficha técnica

Tape & Reel (TR),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 6mOhm @ 25A, 10V 2V @ 1mA 16.3 nC @ 4.5 V ±20V 1375 pF @ 12 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT50M75LLLG

APT50M75LLLG

MOSFET N-CH 500V 57A TO264

Microchip Technology
2,065 -

RFQ

APT50M75LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) - 75mOhm @ 28.5A, 10V 5V @ 2.5mA 125 nC @ 10 V - 5590 pF @ 25 V - - - Through Hole
IXFR32N100P

IXFR32N100P

MOSFET N-CH 1000V 18A ISOPLUS247

IXYS
3,860 -

RFQ

IXFR32N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 340mOhm @ 16A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14200 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6015LVRG

APT6015LVRG

MOSFET N-CH 600V 38A TO264

Microchip Technology
3,105 -

RFQ

APT6015LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - 150mOhm @ 500mA, 10V 4V @ 2.5mA 475 nC @ 10 V - 9000 pF @ 25 V - - - Through Hole
APT20M20B2FLLG

APT20M20B2FLLG

MOSFET N-CH 200V 100A T-MAX

Microchip Technology
3,946 -

RFQ

APT20M20B2FLLG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 20mOhm @ 50A, 10V 5V @ 2.5mA 110 nC @ 10 V - 6850 pF @ 25 V - - - Through Hole
APT66F60L

APT66F60L

MOSFET N-CH 600V 70A TO264

Microchip Technology
2,414 -

RFQ

APT66F60L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 90mOhm @ 33A, 10V 5V @ 2.5mA 330 nC @ 10 V ±30V 13190 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30M36B2FLLG

APT30M36B2FLLG

MOSFET N-CH 300V 84A T-MAX

Microchip Technology
2,233 -

RFQ

APT30M36B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 84A (Tc) - 36mOhm @ 42A, 10V 5V @ 2.5mA 115 nC @ 10 V - 6480 pF @ 25 V - - - Through Hole
IXKT70N60C5-TUB

IXKT70N60C5-TUB

MOSFET N-CH 600V 68A TO268

IXYS
3,921 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 68A (Tc) - - - - - - - - - Surface Mount
APT50M75LFLLG

APT50M75LFLLG

MOSFET N-CH 500V 57A TO264

Microchip Technology
2,908 -

RFQ

APT50M75LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) - 75mOhm @ 28.5A, 10V 5V @ 2.5mA 125 nC @ 10 V - 5590 pF @ 25 V - - - Through Hole
APT48M80B2

APT48M80B2

MOSFET N-CH 800V 49A T-MAX

Microchip Technology
2,776 -

RFQ

APT48M80B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 49A (Tc) 10V 190mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M18B2VRG

APT20M18B2VRG

MOSFET N-CH 200V 100A T-MAX

Microchip Technology
3,156 -

RFQ

APT20M18B2VRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
APT20M18LVRG

APT20M18LVRG

MOSFET N-CH 200V 100A TO264

Microchip Technology
3,454 -

RFQ

APT20M18LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
IXFX80N50P

IXFX80N50P

MOSFET N-CH 500V 80A PLUS247-3

IXYS
3,801 -

RFQ

IXFX80N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 80A (Tc) 10V 65mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR230N20T

IXFR230N20T

MOSFET N-CH 200V 156A ISOPLUS247

IXYS
2,641 -

RFQ

IXFR230N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 156A (Tc) 10V 8mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT10078BFLLG

APT10078BFLLG

MOSFET N-CH 1000V 14A TO247

Microchip Technology
3,805 -

RFQ

APT10078BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) - 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V - 2525 pF @ 25 V - - - Through Hole
IPW65R022CFD7AXKSA1

IPW65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies
3,100 -

RFQ

IPW65R022CFD7AXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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