Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3402-ZK-E1-AY

2SK3402-ZK-E1-AY

2SK3402-ZK-E1-AY - SWITCHING N-C

Renesas
17,500 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4V, 10V 15mOhm @ 18A, 10V 2.5V @ 1mA 61 nC @ 10 V ±20V 3200 pF @ 10 V - 1W (Ta), 40W (Tc) 150°C Surface Mount
IPD650P06NMATMA1

IPD650P06NMATMA1

MOSFET P-CH 60V 22A TO252-3

Infineon Technologies
2,320 -

RFQ

IPD650P06NMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 22A (Tc) 10V 65mOhm @ 22A, 10V 4V @ 1.04mA 39 nC @ 10 V ±20V 1600 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC010NE2LSATMA1

BSC010NE2LSATMA1

MOSFET N-CH 25V 39A/100A TDSON

Infineon Technologies
3,919 -

RFQ

BSC010NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 100A (Tc) 4.5V, 10V 1mOhm @ 30A, 10V 2V @ 250µA 64 nC @ 10 V ±20V 4700 pF @ 12 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MTW8N50E

MTW8N50E

TRANS MOSFET N-CH 500V 8A 3-PIN(

Motorola
13,887 -

RFQ

MTW8N50E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF730

IRF730

MOSFET N-CH 400V 5.5A TO220

NTE Electronics, Inc
806 -

RFQ

IRF730

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS6673BZ-G

FDS6673BZ-G

-30V P-CHANNEL POWERTRENCH MOSFE

onsemi
129,650 -

RFQ

Tape & Reel (TR) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 7.8mOhm @ 14.5A, 10V 3V @ 250µA 65 nC @ 5 V ±25V 4700 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL80HS120

IRL80HS120

MOSFET N-CH 80V 12.5A 6PQFN

Infineon Technologies
13,396 -

RFQ

IRL80HS120

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 12.5A (Tc) 4.5V, 10V 32mOhm @ 7.5A, 10V 2V @ 10µA 7 nC @ 4.5 V ±20V 540 pF @ 25 V - 11.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF190N60E-F152

FCPF190N60E-F152

FCPF190N60E - POWER MOSFET N-CHA

Fairchild Semiconductor
41,900 -

RFQ

Bulk * Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.6A (Tj) 10V 190mOhm @ 10A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 3175 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6716MTRPBF

IRF6716MTRPBF

IRF6716 - 12V-300V N-CHANNEL POW

Infineon Technologies
33,845 -

RFQ

IRF6716MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 180A (Tc) 4.5V, 10V 1.6mOhm @ 40A, 10V 2.4V @ 100µA 59 nC @ 4.5 V ±20V 5150 pF @ 13 V - 3.6W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NTD5C446NT4G

NTD5C446NT4G

NTD5C446 - SINGLE N-CHANNEL POWE

onsemi
39,782 -

RFQ

NTD5C446NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 34.3 nC @ 10 V ±20V 2300 pF @ 20 V - 66W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS3672

FDMS3672

FDMS3672 - N-CHANNEL ULTRAFET TR

Fairchild Semiconductor
56,778 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.4A (Ta), 22A (Tc) 6V, 10V 23mOhm @ 7.4A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 2680 pF @ 50 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP024N06N3G

IPP024N06N3G

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
13,836 -

RFQ

IPP024N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFZ48N

AUIRFZ48N

MOSFET N-CH 55V 69A TO220AB

International Rectifier
18,190 -

RFQ

AUIRFZ48N

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 69A (Tc) 10V 14mOhm @ 40A, 10V 4V @ 100µA 63 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPLK60R1K5PFD7ATMA1

IPLK60R1K5PFD7ATMA1

MOSFET N-CH 600V 3.8A THIN-PAK

Infineon Technologies
4,878 -

RFQ

IPLK60R1K5PFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 3.8A (Tc) 10V 1.5Ohm @ 700mA, 10V 4.5V @ 40µA 4.6 nC @ 10 V ±20V 169 pF @ 400 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF430

IRF430

500V, N-CHANNEL REPETITIVE AVALA

International Rectifier
7,564 -

RFQ

IRF430

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFR8405TRL

AUIRFR8405TRL

MOSFET N-CH 40V 100A DPAK

International Rectifier
2,793 -

RFQ

AUIRFR8405TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.98mOhm @ 90A, 10V 3.9V @ 100µA 155 nC @ 10 V ±20V 5171 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL6535

AUIRFSL6535

MOSFET N-CH 300V 19A TO262-3-901

International Rectifier
15,300 -

RFQ

AUIRFSL6535

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC014N04LSTATMA1

BSC014N04LSTATMA1

MOSFET N-CH 40V 33A/100A TDSON

Infineon Technologies
4,213 -

RFQ

BSC014N04LSTATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 33A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 85 nC @ 10 V ±20V 6020 pF @ 20 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB530N15N3GATMA1

IPB530N15N3GATMA1

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
1,750 -

RFQ

IPB530N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8303TRPBF

IRFH8303TRPBF

MOSFET N-CH 30V 43A/100A 8PQFN

Infineon Technologies
2,666 -

RFQ

IRFH8303TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.2V @ 150µA 179 nC @ 10 V ±20V 7736 pF @ 24 V - 3.7W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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