Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT34F100L

APT34F100L

MOSFET N-CH 1000V 35A TO264

Microchip Technology
2,290 -

RFQ

APT34F100L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 35A (Tc) 10V 400mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50M75B2FLLG

APT50M75B2FLLG

MOSFET N-CH 500V 57A T-MAX

Microchip Technology
3,242 -

RFQ

APT50M75B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 57A (Tc) - 75mOhm @ 28.5A, 10V 5V @ 2.5mA 125 nC @ 10 V - 5590 pF @ 25 V - - - Through Hole
APT84F50B2

APT84F50B2

MOSFET N-CH 500V 84A T-MAX

Microchip Technology
3,337 -

RFQ

APT84F50B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 84A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10M09LVFRG

APT10M09LVFRG

MOSFET N-CH 100V 100A TO264

Microchip Technology
2,962 -

RFQ

APT10M09LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) - 9mOhm @ 50A, 10V 4V @ 2.5mA 350 nC @ 10 V - 9875 pF @ 25 V - - - Through Hole
VS-FA40SA50LC

VS-FA40SA50LC

MOSFET N-CH 500V 40A SOT-227

Vishay General Semiconductor - Diodes Division
2,800 -

RFQ

VS-FA40SA50LC

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 130mOhm @ 23A, 10V 4V @ 250µA 420 nC @ 10 V ±20V 6900 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10078SLLG

APT10078SLLG

MOSFET N-CH 1000V 14A D3PAK

Microchip Technology
3,113 -

RFQ

APT10078SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V ±30V 2525 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH04N300P3HV

IXTH04N300P3HV

MOSFET N-CH 3000V 400MA TO247HV

IXYS
3,164 -

RFQ

IXTH04N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 400mA (Tc) 10V 190Ohm @ 200mA, 10V 4V @ 250µA 13 nC @ 10 V ±20V 283 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8030LVFRG

APT8030LVFRG

MOSFET N-CH 800V 27A TO264

Microchip Technology
2,479 -

RFQ

APT8030LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) - 300mOhm @ 500mA, 10V 4V @ 2.5mA 510 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT1201R4SFLLG

APT1201R4SFLLG

MOSFET N-CH 1200V 9A D3PAK

Microchip Technology
2,907 -

RFQ

APT1201R4SFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 9A (Tc) - 1.4Ohm @ 4.5A, 10V 5V @ 1mA 120 nC @ 10 V - 2500 pF @ 25 V - - - Surface Mount
APT6013B2LLG

APT6013B2LLG

MOSFET N-CH 600V 43A T-MAX

Microchip Technology
3,095 -

RFQ

APT6013B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) - 130mOhm @ 21.5A, 10V 5V @ 2.5mA 130 nC @ 10 V - 5630 pF @ 25 V - - - Through Hole
APT6013LLLG

APT6013LLLG

MOSFET N-CH 600V 43A TO264

Microchip Technology
2,754 -

RFQ

APT6013LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 10V 130mOhm @ 21.5A, 10V 5V @ 2.5mA 130 nC @ 10 V ±30V 5630 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN32N80P

IXFN32N80P

MOSFET N-CH 800V 29A SOT-227B

IXYS
2,486 -

RFQ

IXFN32N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 29A (Tc) 10V 270mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8820 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFR40N90P

IXFR40N90P

MOSFET N-CH 900V 21A ISOPLUS247

IXYS
2,170 -

RFQ

IXFR40N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 21A (Tc) 10V 230mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT12080LVRG

APT12080LVRG

MOSFET N-CH 1200V 16A TO264

Microchip Technology
2,674 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 800mOhm @ 8A, 10V 4V @ 2.5mA 485 nC @ 10 V ±30V 7800 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKR40N60C

IXKR40N60C

MOSFET N-CH 600V 38A ISOPLUS247

IXYS
3,389 -

RFQ

IXKR40N60C

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 70mOhm @ 25A, 10V 3.9V @ 3mA 250 nC @ 10 V ±20V - Super Junction - -40°C ~ 150°C (TJ) Through Hole
APT56F60B2

APT56F60B2

MOSFET N-CH 600V 60A T-MAX

Microchip Technology
2,438 -

RFQ

APT56F60B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTH60N120G2-7

SCTH60N120G2-7

PTD WBG & POWER RF

STMicroelectronics
2,022 -

RFQ

SCTH60N120G2-7

Ficha técnica

Tape & Reel (TR) - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A (Tc) 18V 52mOhm @ 30A, 10V 5V @ 1mA 94 nC @ 18 V +22V, -10V 1969 pF @ 800 V - 390W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT10050LVFRG

APT10050LVFRG

MOSFET N-CH 1000V 21A TO264

Microchip Technology
2,794 -

RFQ

APT10050LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT10050B2VFRG

APT10050B2VFRG

MOSFET N-CH 1000V 21A T-MAX

Microchip Technology
3,907 -

RFQ

APT10050B2VFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT40N60JCU3

APT40N60JCU3

MOSFET N-CH 600V 40A SOT227

Microchip Technology
3,151 -

RFQ

APT40N60JCU3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 1mA 259 nC @ 10 V ±20V 7015 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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