Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT6011B2VRG

APT6011B2VRG

MOSFET N-CH 600V 49A T-MAX

Microchip Technology
2,034 -

RFQ

APT6011B2VRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) - 110mOhm @ 24.5A, 10V 4V @ 2.5mA 450 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
APT30M60J

APT30M60J

MOSFET N-CH 600V 31A ISOTOP

Microchip Technology
2,717 -

RFQ

APT30M60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 5890 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN120N20

IXFN120N20

MOSFET N-CH 200V 120A SOT-227B

IXYS
3,481 -

RFQ

IXFN120N20

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 17mOhm @ 500mA, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT20M16LFLLG

APT20M16LFLLG

MOSFET N-CH 200V 100A TO264

Microchip Technology
3,257 -

RFQ

APT20M16LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 16mOhm @ 50A, 10V 5V @ 2.5mA 140 nC @ 10 V - 7220 pF @ 25 V - - - Through Hole
PHD16N03T,118

PHD16N03T,118

MOSFET N-CH 30V 13.1A DPAK

NXP USA Inc.
2,297 -

RFQ

PHD16N03T,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.1A (Tc) 10V 100mOhm @ 13A, 10V 4V @ 1mA 5.2 nC @ 10 V ±20V 180 pF @ 30 V - 32.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD34NQ10T,118

PHD34NQ10T,118

MOSFET N-CH 100V 35A DPAK

NXP USA Inc.
2,468 -

RFQ

PHD34NQ10T,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 40mOhm @ 17A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1704 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD37N06LT,118

PHD37N06LT,118

MOSFET N-CH 55V 37A DPAK

NXP USA Inc.
3,449 -

RFQ

PHD37N06LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 37A (Tc) 5V, 10V 32mOhm @ 17A, 10V 2V @ 1mA 22.5 nC @ 5 V ±13V 1400 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD82NQ03LT,118

PHD82NQ03LT,118

MOSFET N-CH 30V 75A DPAK

NXP USA Inc.
3,841 -

RFQ

PHD82NQ03LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 8mOhm @ 25A, 10V 2.5V @ 1mA 16.7 nC @ 5 V ±20V 1620 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHK24NQ04LT,518

PHK24NQ04LT,518

MOSFET N-CH 40V 21.2A 8SO

NXP USA Inc.
2,859 -

RFQ

PHK24NQ04LT,518

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 21.2A (Tc) 4.5V, 10V 7.7mOhm @ 14A, 10V 2V @ 1mA 64 nC @ 10 V ±20V 2985 pF @ 25 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHP110NQ08LT,127

PHP110NQ08LT,127

MOSFET N-CH 75V 75A TO220AB

NXP USA Inc.
2,770 -

RFQ

PHP110NQ08LT,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 4.5V, 10V 8.5mOhm @ 25A, 10V 2V @ 1mA 127.3 nC @ 10 V ±20V 6631 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP110NQ08T,127

PHP110NQ08T,127

MOSFET N-CH 75V 75A TO220AB

NXP USA Inc.
3,274 -

RFQ

PHP110NQ08T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9mOhm @ 25A, 10V 4V @ 1mA 113.1 nC @ 10 V ±20V 4860 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP160NQ08T,127

PHP160NQ08T,127

MOSFET N-CH 75V 75A TO220AB

NXP USA Inc.
2,062 -

RFQ

PHP160NQ08T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 5.6mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 5585 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP21N06T,127

PHP21N06T,127

MOSFET N-CH 55V 21A TO220AB

NXP USA Inc.
2,486 -

RFQ

PHP21N06T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 21A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA 13 nC @ 10 V ±20V 500 pF @ 25 V - 69W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP45N03LTA,127

PHP45N03LTA,127

MOSFET N-CH 25V 40A TO220AB

NXP USA Inc.
2,243 -

RFQ

PHP45N03LTA,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 3.5V, 10V 21mOhm @ 25A, 10V 2V @ 1mA 19 nC @ 5 V ±20V 700 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP47NQ10T,127

PHP47NQ10T,127

MOSFET N-CH 100V 47A TO220AB

NXP USA Inc.
3,758 -

RFQ

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) - 28mOhm @ 25A, 10V 4V @ 1mA 66 nC @ 10 V - 3100 pF @ 25 V - - - Through Hole
PHP54N06T,127

PHP54N06T,127

MOSFET N-CH 55V 54A TO220AB

NXP USA Inc.
2,062 -

RFQ

PHP54N06T,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 54A (Tc) 10V 20mOhm @ 25A, 10V 4V @ 1mA 36 nC @ 10 V ±20V 1592 pF @ 25 V - 118W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E4R0-80E,127

BUK7E4R0-80E,127

MOSFET N-CH 80V 120A I2PAK

NXP USA Inc.
296 -

RFQ

BUK7E4R0-80E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 169 nC @ 10 V ±20V 12030 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9515-60E,127

BUK9515-60E,127

MOSFET N-CH 60V 54A TO220AB

NXP USA Inc.
3,035 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 54A (Tc) 5V, 10V 13mOhm @ 15A, 10V 2.1V @ 1mA 20.5 nC @ 5 V ±10V 2651 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK951R6-30E,127

BUK951R6-30E,127

MOSFET N-CH 30V 120A TO220AB

NXP USA Inc.
2,990 -

RFQ

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 5V, 10V 1.4mOhm @ 25A, 10V 2.1V @ 1mA 113 nC @ 5 V ±10V 16150 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK951R9-40E,127

BUK951R9-40E,127

MOSFET N-CH 40V 120A TO220AB

NXP USA Inc.
3,845 -

RFQ

BUK951R9-40E,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 1.7mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 16400 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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