Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFL38N100P

IXFL38N100P

MOSFET N-CH 1000V 29A I5PAK

IXYS
2,057 -

RFQ

IXFL38N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 29A (Tc) 10V 230mOhm @ 19A, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 24000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN150N10

IXFN150N10

MOSFET N-CH 100V 150A SOT-227

IXYS
2,010 -

RFQ

IXFN150N10

Ficha técnica

Bulk HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTH3N200P3HV

IXTH3N200P3HV

MOSFET N-CH 2000V 3A TO247

IXYS
3,878 -

RFQ

IXTH3N200P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 3A (Tc) 10V 8Ohm @ 1.5A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 1860 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL34N100

IXFL34N100

MOSFET N-CH 1000V 30A ISOPLUS264

IXYS
3,361 -

RFQ

IXFL34N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 280mOhm @ 30A, 10V 5V @ 8mA 380 nC @ 10 V ±20V 9200 pF @ 25 V - 550W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8024LFLLG

APT8024LFLLG

MOSFET N-CH 800V 31A TO264

Microchip Technology
3,170 -

RFQ

APT8024LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 31A (Tc) 10V 260mOhm @ 15.5A, 10V 5V @ 2.5mA 160 nC @ 10 V ±30V 4670 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT38M50J

APT38M50J

MOSFET N-CH 500V 38A ISOTOP

Microchip Technology
3,768 -

RFQ

APT38M50J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN48N60P

IXFN48N60P

MOSFET N-CH 600V 40A SOT227B

IXYS
3,332 -

RFQ

IXFN48N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 140mOhm @ 4A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT26F120L

APT26F120L

MOSFET N-CH 1200V 27A TO264

Microchip Technology
3,353 -

RFQ

APT26F120L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 27A (Tc) 10V 650mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50M65LLLG

APT50M65LLLG

MOSFET N-CH 500V 67A TO264

Microchip Technology
2,769 -

RFQ

APT50M65LLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 67A (Tc) 10V 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT26F120B2

APT26F120B2

MOSFET N-CH 1200V 27A T-MAX

Microchip Technology
3,787 -

RFQ

APT26F120B2

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 27A (Tc) 10V 650mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL132N50P3

IXFL132N50P3

MOSFET N-CH 500V 63A ISOPLUS264

IXYS
3,659 -

RFQ

IXFL132N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 43mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT4N150HV-TRL

IXTT4N150HV-TRL

MOSFET N-CH 1500V 4A TO268HV

IXYS
2,626 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Tc) 10V 6Ohm @ 2A, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT51M50J

APT51M50J

MOSFET N-CH 500V 51A ISOTOP

Microchip Technology
3,770 -

RFQ

APT51M50J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M65B2FLLG

APT50M65B2FLLG

MOSFET N-CH 500V 67A T-MAX

Microchip Technology
2,972 -

RFQ

APT50M65B2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 67A (Tc) 10V 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT50M65LFLLG

APT50M65LFLLG

MOSFET N-CH 500V 67A TO264

Microchip Technology
3,550 -

RFQ

APT50M65LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 67A (Tc) 10V 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
GA10SICP12-263

GA10SICP12-263

TRANS SJT 1200V 25A D2PAK

GeneSiC Semiconductor
2,833 -

RFQ

GA10SICP12-263

Ficha técnica

Tube - Active - SiC (Silicon Carbide Junction Transistor) 1200 V 25A (Tc) - 100mOhm @ 10A - - - 1403 pF @ 800 V - 170W (Tc) 175°C (TJ) Surface Mount
APT30F60J

APT30F60J

MOSFET N-CH 600V 31A ISOTOP

Microchip Technology
3,517 -

RFQ

APT30F60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 8590 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTR120P20T

IXTR120P20T

MOSFET P-CH 200V 90A ISOPLUS247

IXYS
3,084 -

RFQ

IXTR120P20T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 32mOhm @ 60A, 10V 4.5V @ 250µA 740 nC @ 10 V ±15V 73000 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR210P10T

IXTR210P10T

MOSFET P-CH 100V 195A ISOPLUS247

IXYS
2,870 -

RFQ

IXTR210P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 195A (Tc) 10V 8mOhm @ 105A, 10V 4.5V @ 250µA 740 nC @ 10 V ±15V 69500 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN26N90

IXFN26N90

MOSFET N-CH 900V 26A SOT-227B

IXYS
3,100 -

RFQ

IXFN26N90

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 900 V 26A (Tc) 10V 300mOhm @ 13A, 10V 5V @ 8mA 240 nC @ 10 V ±20V 10800 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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